Leakage current is an important qualitative metric of LSI (Large Scale Integrated circuit). In this paper, we focus on reduction of leakage current variation under the process variation. Firstly, we derive a set of quadratic equations to evaluate delay and leakage current under the process variation. Using these equations, we discuss the cases of varying leakage current without degrading delay distribution and propose a procedure to reduce the leakage current variations. From the experiments, we show the proposed method effectively reduces the leakage current variation up to 50% at 90 percentile point of the distribution compared with the conventional design approach.

Process variation is becoming a primal concern in timing closure of LSI (Large Scale Integrated Circuit) with the progress of process technology scaling. To overcome this problem, SSTA (Statistical Static Timing Analysis) has been intensively studied since it is expected to be one of the most efficient ways for performance estimation. In this paper, we study variation of output transition-time. We firstly clarify that the transition-time variation can not be expressed accurately by a conventional first-order sensitivity-based approach in the case that the input transition-time is slow and the output load is small. We secondly reveal quadratic dependence of the output transition-time to operating margin in voltage. We finally propose a procedure through which the estimation of output transition-time becomes continuously accurate in wide range of input transition-time and output load combinations.

This paper evaluates impact of self-heating in wire interconnection on signal propagation delay in an upcoming 32 nm process technology, using practical physical parameters. This paper examines a 64-bit data transmission model as one of the most heating cases. Experimental results show that the maximum wire temperature increase due to the self-heating appears in the case where the ratio of interconnect delay becomes largest compared to the driver delay. However, even in the most significant case which induces the maximum temperature rise of 11.0, the corresponding increase in the wire resistance is 1.99% and the resulting delay increase is only 1.15%, as for the assumed 32 nm process. A part of the impact reduction of wire self-heating on timing comes from the size-effect of nano-scale wires.