We have implemented a distributed sensor system based on an array of fiber Bragg gratings (FBGs), which can measure up to 1000 points with a single piece of fiber. The system consists of FBGs having the same resonant wavelengths and small reflectivities (0.1 dB), and a wavelength tunable optical time-domain reflectometer (OTDR). To interrogate the distributed grating sensors and to address the event locations simultaneously, we have utilized the tunable OTDR. A thermoelectric temperature controller was used to tune the emission wavelength of the OTDR. The operating temperature of the laser diode was changed. By tuning the pulse wavelength of the OTDR, we could identify the FBGs whose resonant wavelengths were under change within the operating wavelength range of the DFB LD. A novel sensor cable with dry core structure and tensile cable was fabricated to realize significant construction savings at an industrial field and in-door and out-door applications. For experiments, a sensor cable having 52 gratings with 10 m separations was fabricated. To prevent confusion with unexpected signals from the front-panel connector zone of the OTDR, a 1 km buffer cable was installed in front of the OTDR. The proposed system could distinguish and locate the gratings that were under temperature variation from 20 to 70.

Laser diodes in the (Al, Ga, In) N system are attractive for many applications. Due to the wurtzite crystal structure, cleaved facets are not easily produced. We have investigated distributed feedback (DFB) laser diodes employing embedded dielectric gratings with the grating located above the active region. The dielectric gratings are incorporated via epitaxial lateral overgrowth. The DFB laser diodes had reduced threshold current densities over the etched cavity devices, with a minimum of 15 kA/cm2. The spectral emission width was considerably reduced for the DFB devices. Voltages for the DFB devices were high due to the presence of the Si3N4 grating within the p-type material.

Different-wavelength distributed feedback laser diodes with integrated modulators (DFB/MODs) are fabricated on a single wafer operate at wavelengths from 1. 52 µm to 1. 59 µm, a range comparable to the expanded Er-doped fiber amplifier gain band. A newly developed field-size-variation electron-beam lithography enables grating pitch to be controlled to within 0. 0012 nm, and narrow-stripe selective metal-organic vapor-phase epitaxy is used to control the bandgap wavelength of laser active layers and modulator absorption layers for each channel. The channel spacing of fabricated 40-channel DFB/MODs is 214 GHz in average with a standard deviation of 0. 39 nm. Very uniform lasing and modulating performances are achieved, such as threshold currents about 10 mA and extinction ratios about 20 dB at -2 V in average. These devices have been used to demonstrate 2. 5-Gb/s transmission over 600 km of a normal fiber with a power penalty of less than 1 dB.

The multichannel distortions of direct modulated laser diode were studied from the view point of rate equations. A novel technique for compensating the composite second order distortion (CSO) was proposed. Meanwhile, the related calibration procedures were indicated. After the compensation, 10 dB improvement in CSO was obtained