Wide-Wavelength-Range Modulator-Integrated DFB Laser Diodes Fabricated on a Single Wafer

Masayuki YAMAGUCHI; Koji KUDO; Hiroyuki YAMAZAKI; Masashige ISHIZAKA; Tatsuya SASAKI

Wide-Wavelength-Range Modulator-Integrated DFB Laser Diodes Fabricated on a Single Wafer

Masayuki YAMAGUCHI, Koji KUDO, Hiroyuki YAMAZAKI, Masashige ISHIZAKA, Tatsuya SASAKI

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Different-wavelength distributed feedback laser diodes with integrated modulators (DFB/MODs) are fabricated on a single wafer operate at wavelengths from 1. 52 µm to 1. 59 µm, a range comparable to the expanded Er-doped fiber amplifier gain band. A newly developed field-size-variation electron-beam lithography enables grating pitch to be controlled to within 0. 0012 nm, and narrow-stripe selective metal-organic vapor-phase epitaxy is used to control the bandgap wavelength of laser active layers and modulator absorption layers for each channel. The channel spacing of fabricated 40-channel DFB/MODs is 214 GHz in average with a standard deviation of 0. 39 nm. Very uniform lasing and modulating performances are achieved, such as threshold currents about 10 mA and extinction ratios about 20 dB at -2 V in average. These devices have been used to demonstrate 2. 5-Gb/s transmission over 600 km of a normal fiber with a power penalty of less than 1 dB.

Publication: IEICE TRANSACTIONS on Electronics Vol.E81-C No.8 pp.1219-1224

Publication Date: 1998/08/25

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Type of Manuscript: Special Section INVITED PAPER (Special Issue on High-Capacity WDM/TDM Networks)

Category: Active Devices for Photonic Networks

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Masayuki YAMAGUCHI, Koji KUDO, Hiroyuki YAMAZAKI, Masashige ISHIZAKA, Tatsuya SASAKI, "Wide-Wavelength-Range Modulator-Integrated DFB Laser Diodes Fabricated on a Single Wafer" in IEICE TRANSACTIONS on Electronics, vol. E81-C, no. 8, pp. 1219-1224, August 1998, doi: .
Abstract: Different-wavelength distributed feedback laser diodes with integrated modulators (DFB/MODs) are fabricated on a single wafer operate at wavelengths from 1. 52 µm to 1. 59 µm, a range comparable to the expanded Er-doped fiber amplifier gain band. A newly developed field-size-variation electron-beam lithography enables grating pitch to be controlled to within 0. 0012 nm, and narrow-stripe selective metal-organic vapor-phase epitaxy is used to control the bandgap wavelength of laser active layers and modulator absorption layers for each channel. The channel spacing of fabricated 40-channel DFB/MODs is 214 GHz in average with a standard deviation of 0. 39 nm. Very uniform lasing and modulating performances are achieved, such as threshold currents about 10 mA and extinction ratios about 20 dB at -2 V in average. These devices have been used to demonstrate 2. 5-Gb/s transmission over 600 km of a normal fiber with a power penalty of less than 1 dB.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/e81-c_8_1219/_p

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@ARTICLE{e81-c_8_1219,
author={Masayuki YAMAGUCHI, Koji KUDO, Hiroyuki YAMAZAKI, Masashige ISHIZAKA, Tatsuya SASAKI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Wide-Wavelength-Range Modulator-Integrated DFB Laser Diodes Fabricated on a Single Wafer},
year={1998},
volume={E81-C},
number={8},
pages={1219-1224},
abstract={Different-wavelength distributed feedback laser diodes with integrated modulators (DFB/MODs) are fabricated on a single wafer operate at wavelengths from 1. 52 µm to 1. 59 µm, a range comparable to the expanded Er-doped fiber amplifier gain band. A newly developed field-size-variation electron-beam lithography enables grating pitch to be controlled to within 0. 0012 nm, and narrow-stripe selective metal-organic vapor-phase epitaxy is used to control the bandgap wavelength of laser active layers and modulator absorption layers for each channel. The channel spacing of fabricated 40-channel DFB/MODs is 214 GHz in average with a standard deviation of 0. 39 nm. Very uniform lasing and modulating performances are achieved, such as threshold currents about 10 mA and extinction ratios about 20 dB at -2 V in average. These devices have been used to demonstrate 2. 5-Gb/s transmission over 600 km of a normal fiber with a power penalty of less than 1 dB.},
keywords={},
doi={},
ISSN={},
month={August},}

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TY - JOUR
TI - Wide-Wavelength-Range Modulator-Integrated DFB Laser Diodes Fabricated on a Single Wafer
T2 - IEICE TRANSACTIONS on Electronics
SP - 1219
EP - 1224
AU - Masayuki YAMAGUCHI
AU - Koji KUDO
AU - Hiroyuki YAMAZAKI
AU - Masashige ISHIZAKA
AU - Tatsuya SASAKI
PY - 1998
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E81-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 1998
AB - Different-wavelength distributed feedback laser diodes with integrated modulators (DFB/MODs) are fabricated on a single wafer operate at wavelengths from 1. 52 µm to 1. 59 µm, a range comparable to the expanded Er-doped fiber amplifier gain band. A newly developed field-size-variation electron-beam lithography enables grating pitch to be controlled to within 0. 0012 nm, and narrow-stripe selective metal-organic vapor-phase epitaxy is used to control the bandgap wavelength of laser active layers and modulator absorption layers for each channel. The channel spacing of fabricated 40-channel DFB/MODs is 214 GHz in average with a standard deviation of 0. 39 nm. Very uniform lasing and modulating performances are achieved, such as threshold currents about 10 mA and extinction ratios about 20 dB at -2 V in average. These devices have been used to demonstrate 2. 5-Gb/s transmission over 600 km of a normal fiber with a power penalty of less than 1 dB.
ER -