The response of differential pairs against low-frequency substrate voltage variation is captured in a combined transistor and substrate network models. The model generation is regularized for variation of transistor geometries including channel sizes, fingering and folding, and the placements of guard bands. The expansion of the models for full-chip substrate noise analysis is also discussed. The substrate sensitivity of differential pairs is evaluated through on-chip substrate coupling measurements in a 90 nm CMOS technology with more than 64 different geometries and operating conditions. The trends and strengths of substrate sensitivity are shown to be well consistent between simulation and measurements.

Substrate coupling of radio frequency (RF) components is represented by equivalent circuits unifying a resistive mesh network with lumped capacitors in connection with the backside of device models. Two-port S-parameter test structures are used to characterize the strength of substrate coupling of resistors, capacitors, inductors, and MOSFETs in a 65 nm CMOS technology with different geometries and dimensions. The consistency is finely demonstrated between simulation with the equivalent circuits and measurements of the test structures, with the deviation of typically less than 3 dB for passive and 6 dB for active components, in the transmission properties for the frequency range of interest up to 8 GHz.

Substrate noise coupling has been seriously concerned in the design of advanced analog and radio frequency (RF) integrated circuits (ICs). This paper reviews recent advancements in the modeling, analysis, and evaluation of substrate noise coupling at IC chip level. Noise generation from digital circuits and propagation to the area of analog circuits are clearly visualized both by full-chip simulation as well as by on-chip measurements, for silicon test vehicles. The impacts of substrate noise coupling are also in-depth discussed at device, circuit, as well as system levels. Overall understanding of substrate noise coupling will then provide the basics for highly reliable design of analog and RF ICs.

A compact on-chip signal monitor circuit uses voltage mode sensing by a source follower circuit with small input device geometry, followed by a current-mode sample and a hold circuit that is connected to a shared current output bus. A prototype signal monitor circuit demonstrated a 1.1-GHz effective bandwidth for 1.0-V full-swing digital signals in a 90-nm CMOS technology, where the monitor used 2.5-V I/O CMOS transistors and occupied a 30 µm120 µm silicon area. We also showed that such signal monitor circuits can be tailored to sense of power-supply, ground, as well as full-swing logic signal wirings, and form an array with a single current output. Therefore, an on-chip multi-channel signal monitor enables multiple-points as well as multiple-voltage domain waveform acquisition for the purpose of the in-depth study of digital signal integrity.