Substrate coupling of radio frequency (RF) components is represented by equivalent circuits unifying a resistive mesh network with lumped capacitors in connection with the backside of device models. Two-port S-parameter test structures are used to characterize the strength of substrate coupling of resistors, capacitors, inductors, and MOSFETs in a 65 nm CMOS technology with different geometries and dimensions. The consistency is finely demonstrated between simulation with the equivalent circuits and measurements of the test structures, with the deviation of typically less than 3 dB for passive and 6 dB for active components, in the transmission properties for the frequency range of interest up to 8 GHz.
Naoya AZUMA
Kobe University
Makoto NAGATA
Kobe University
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Copy
Naoya AZUMA, Makoto NAGATA, "Equivalent Circuit Representation of Silicon Substrate Coupling of Passive and Active RF Components" in IEICE TRANSACTIONS on Electronics,
vol. E96-C, no. 6, pp. 875-883, June 2013, doi: 10.1587/transele.E96.C.875.
Abstract: Substrate coupling of radio frequency (RF) components is represented by equivalent circuits unifying a resistive mesh network with lumped capacitors in connection with the backside of device models. Two-port S-parameter test structures are used to characterize the strength of substrate coupling of resistors, capacitors, inductors, and MOSFETs in a 65 nm CMOS technology with different geometries and dimensions. The consistency is finely demonstrated between simulation with the equivalent circuits and measurements of the test structures, with the deviation of typically less than 3 dB for passive and 6 dB for active components, in the transmission properties for the frequency range of interest up to 8 GHz.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/transele.E96.C.875/_p
Copy
@ARTICLE{e96-c_6_875,
author={Naoya AZUMA, Makoto NAGATA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Equivalent Circuit Representation of Silicon Substrate Coupling of Passive and Active RF Components},
year={2013},
volume={E96-C},
number={6},
pages={875-883},
abstract={Substrate coupling of radio frequency (RF) components is represented by equivalent circuits unifying a resistive mesh network with lumped capacitors in connection with the backside of device models. Two-port S-parameter test structures are used to characterize the strength of substrate coupling of resistors, capacitors, inductors, and MOSFETs in a 65 nm CMOS technology with different geometries and dimensions. The consistency is finely demonstrated between simulation with the equivalent circuits and measurements of the test structures, with the deviation of typically less than 3 dB for passive and 6 dB for active components, in the transmission properties for the frequency range of interest up to 8 GHz.},
keywords={},
doi={10.1587/transele.E96.C.875},
ISSN={1745-1353},
month={June},}
Copy
TY - JOUR
TI - Equivalent Circuit Representation of Silicon Substrate Coupling of Passive and Active RF Components
T2 - IEICE TRANSACTIONS on Electronics
SP - 875
EP - 883
AU - Naoya AZUMA
AU - Makoto NAGATA
PY - 2013
DO - 10.1587/transele.E96.C.875
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E96-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 2013
AB - Substrate coupling of radio frequency (RF) components is represented by equivalent circuits unifying a resistive mesh network with lumped capacitors in connection with the backside of device models. Two-port S-parameter test structures are used to characterize the strength of substrate coupling of resistors, capacitors, inductors, and MOSFETs in a 65 nm CMOS technology with different geometries and dimensions. The consistency is finely demonstrated between simulation with the equivalent circuits and measurements of the test structures, with the deviation of typically less than 3 dB for passive and 6 dB for active components, in the transmission properties for the frequency range of interest up to 8 GHz.
ER -