Equivalent Circuit Representation of Silicon Substrate Coupling of Passive and Active RF Components

Naoya AZUMA, Makoto NAGATA

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Summary :

Substrate coupling of radio frequency (RF) components is represented by equivalent circuits unifying a resistive mesh network with lumped capacitors in connection with the backside of device models. Two-port S-parameter test structures are used to characterize the strength of substrate coupling of resistors, capacitors, inductors, and MOSFETs in a 65 nm CMOS technology with different geometries and dimensions. The consistency is finely demonstrated between simulation with the equivalent circuits and measurements of the test structures, with the deviation of typically less than 3 dB for passive and 6 dB for active components, in the transmission properties for the frequency range of interest up to 8 GHz.

Publication
IEICE TRANSACTIONS on Electronics Vol.E96-C No.6 pp.875-883
Publication Date
2013/06/01
Publicized
Online ISSN
1745-1353
DOI
10.1587/transele.E96.C.875
Type of Manuscript
Special Section PAPER (Special Section on Analog Circuits and Related SoC Integration Technologies)
Category

Authors

Naoya AZUMA
  Kobe University
Makoto NAGATA
  Kobe University

Keyword

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