Hot-Carrier Aging Simulations of Voltage Controlled Oscillator

Norio KOIKE; Hirokazu NISHIMURA; Masato TAKEO; Tomoyuki MORII; Kenichiro TATSUUMA

Hot-Carrier Aging Simulations of Voltage Controlled Oscillator

Norio KOIKE, Hirokazu NISHIMURA, Masato TAKEO, Tomoyuki MORII, Kenichiro TATSUUMA

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Hot-carrier degradation of voltage controlled oscillator (VCO) was investigated by a reliability simulator known as BERT. The appropriate monitor of VCO frequency degradation shifts from the saturated drain current of an N MOSFET to linear drain current with an increase in VCO input voltage. The degradation of the VCO drastically increases with a small reduction in initial oscillation frequency. These results imply the need for an appropriate reliability margin around the standard operating point as well as a performance margin, which cannot be achieved by using conventional drain current monitors.

Publication: IEICE TRANSACTIONS on Electronics Vol.E79-C No.9 pp.1285-1288

Publication Date: 1996/09/25

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Type of Manuscript: LETTER

Category: Integrated Electronics

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Norio KOIKE, Hirokazu NISHIMURA, Masato TAKEO, Tomoyuki MORII, Kenichiro TATSUUMA, "Hot-Carrier Aging Simulations of Voltage Controlled Oscillator" in IEICE TRANSACTIONS on Electronics, vol. E79-C, no. 9, pp. 1285-1288, September 1996, doi: .
Abstract: Hot-carrier degradation of voltage controlled oscillator (VCO) was investigated by a reliability simulator known as BERT. The appropriate monitor of VCO frequency degradation shifts from the saturated drain current of an N MOSFET to linear drain current with an increase in VCO input voltage. The degradation of the VCO drastically increases with a small reduction in initial oscillation frequency. These results imply the need for an appropriate reliability margin around the standard operating point as well as a performance margin, which cannot be achieved by using conventional drain current monitors.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/e79-c_9_1285/_p

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@ARTICLE{e79-c_9_1285,
author={Norio KOIKE, Hirokazu NISHIMURA, Masato TAKEO, Tomoyuki MORII, Kenichiro TATSUUMA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Hot-Carrier Aging Simulations of Voltage Controlled Oscillator},
year={1996},
volume={E79-C},
number={9},
pages={1285-1288},
abstract={Hot-carrier degradation of voltage controlled oscillator (VCO) was investigated by a reliability simulator known as BERT. The appropriate monitor of VCO frequency degradation shifts from the saturated drain current of an N MOSFET to linear drain current with an increase in VCO input voltage. The degradation of the VCO drastically increases with a small reduction in initial oscillation frequency. These results imply the need for an appropriate reliability margin around the standard operating point as well as a performance margin, which cannot be achieved by using conventional drain current monitors.},
keywords={},
doi={},
ISSN={},
month={September},}

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TY - JOUR
TI - Hot-Carrier Aging Simulations of Voltage Controlled Oscillator
T2 - IEICE TRANSACTIONS on Electronics
SP - 1285
EP - 1288
AU - Norio KOIKE
AU - Hirokazu NISHIMURA
AU - Masato TAKEO
AU - Tomoyuki MORII
AU - Kenichiro TATSUUMA
PY - 1996
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E79-C
IS - 9
JA - IEICE TRANSACTIONS on Electronics
Y1 - September 1996
AB - Hot-carrier degradation of voltage controlled oscillator (VCO) was investigated by a reliability simulator known as BERT. The appropriate monitor of VCO frequency degradation shifts from the saturated drain current of an N MOSFET to linear drain current with an increase in VCO input voltage. The degradation of the VCO drastically increases with a small reduction in initial oscillation frequency. These results imply the need for an appropriate reliability margin around the standard operating point as well as a performance margin, which cannot be achieved by using conventional drain current monitors.
ER -