Power Heterojunction FET with High Breakdown Voltage for X- and Ku-Band Applications

Yasuhiro OKAMOTO; Kohji MATSUNAGA; Mikio KANAMORI; Masaaki KUZUHARA; Yoichiro TAKAYAMA

Power Heterojunction FET with High Breakdown Voltage for X- and Ku-Band Applications

Yasuhiro OKAMOTO, Kohji MATSUNAGA, Mikio KANAMORI, Masaaki KUZUHARA, Yoichiro TAKAYAMA

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A buried gate AlGaAs/InGaAs heterojunction FET (HJFET) with gate breakdown voltage of 30 V was examined for high drain bias (higher than 10 V) operation. High breakdown voltage was realized due to the optimization of the narrow recess depth. A 1.4 mm HJFET has exhibited an output power of 30.2 dBm (1050 mW) with 50% power added efficiency (PAE) and 12.1 dB linear gain at 12 GHz with a 13 V drain bias. An internal matching circuit for a 16.8 mm HJFET was designed using a large-signal load impedance determined from load-pull measurement. The 16.8 mm internally-matched HJFET has delivered 38.9 dBm (7.8 W) output power with 46% PAE and 11.6 dB linear gain at 12 GHz with a drain bias of 13 V. This is the first report of higher than 10 V operation of an X- and Ku-band power HJFET with the excellent power performance.

Publication: IEICE TRANSACTIONS on Electronics Vol.E80-C No.6 pp.746-750

Publication Date: 1997/06/25

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Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeterwave High-power Devices)

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Yasuhiro OKAMOTO, Kohji MATSUNAGA, Mikio KANAMORI, Masaaki KUZUHARA, Yoichiro TAKAYAMA, "Power Heterojunction FET with High Breakdown Voltage for X- and Ku-Band Applications" in IEICE TRANSACTIONS on Electronics, vol. E80-C, no. 6, pp. 746-750, June 1997, doi: .
Abstract: A buried gate AlGaAs/InGaAs heterojunction FET (HJFET) with gate breakdown voltage of 30 V was examined for high drain bias (higher than 10 V) operation. High breakdown voltage was realized due to the optimization of the narrow recess depth. A 1.4 mm HJFET has exhibited an output power of 30.2 dBm (1050 mW) with 50% power added efficiency (PAE) and 12.1 dB linear gain at 12 GHz with a 13 V drain bias. An internal matching circuit for a 16.8 mm HJFET was designed using a large-signal load impedance determined from load-pull measurement. The 16.8 mm internally-matched HJFET has delivered 38.9 dBm (7.8 W) output power with 46% PAE and 11.6 dB linear gain at 12 GHz with a drain bias of 13 V. This is the first report of higher than 10 V operation of an X- and Ku-band power HJFET with the excellent power performance.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/e80-c_6_746/_p

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@ARTICLE{e80-c_6_746,
author={Yasuhiro OKAMOTO, Kohji MATSUNAGA, Mikio KANAMORI, Masaaki KUZUHARA, Yoichiro TAKAYAMA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Power Heterojunction FET with High Breakdown Voltage for X- and Ku-Band Applications},
year={1997},
volume={E80-C},
number={6},
pages={746-750},
abstract={A buried gate AlGaAs/InGaAs heterojunction FET (HJFET) with gate breakdown voltage of 30 V was examined for high drain bias (higher than 10 V) operation. High breakdown voltage was realized due to the optimization of the narrow recess depth. A 1.4 mm HJFET has exhibited an output power of 30.2 dBm (1050 mW) with 50% power added efficiency (PAE) and 12.1 dB linear gain at 12 GHz with a 13 V drain bias. An internal matching circuit for a 16.8 mm HJFET was designed using a large-signal load impedance determined from load-pull measurement. The 16.8 mm internally-matched HJFET has delivered 38.9 dBm (7.8 W) output power with 46% PAE and 11.6 dB linear gain at 12 GHz with a drain bias of 13 V. This is the first report of higher than 10 V operation of an X- and Ku-band power HJFET with the excellent power performance.},
keywords={},
doi={},
ISSN={},
month={June},}

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TY - JOUR
TI - Power Heterojunction FET with High Breakdown Voltage for X- and Ku-Band Applications
T2 - IEICE TRANSACTIONS on Electronics
SP - 746
EP - 750
AU - Yasuhiro OKAMOTO
AU - Kohji MATSUNAGA
AU - Mikio KANAMORI
AU - Masaaki KUZUHARA
AU - Yoichiro TAKAYAMA
PY - 1997
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E80-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 1997
AB - A buried gate AlGaAs/InGaAs heterojunction FET (HJFET) with gate breakdown voltage of 30 V was examined for high drain bias (higher than 10 V) operation. High breakdown voltage was realized due to the optimization of the narrow recess depth. A 1.4 mm HJFET has exhibited an output power of 30.2 dBm (1050 mW) with 50% power added efficiency (PAE) and 12.1 dB linear gain at 12 GHz with a 13 V drain bias. An internal matching circuit for a 16.8 mm HJFET was designed using a large-signal load impedance determined from load-pull measurement. The 16.8 mm internally-matched HJFET has delivered 38.9 dBm (7.8 W) output power with 46% PAE and 11.6 dB linear gain at 12 GHz with a drain bias of 13 V. This is the first report of higher than 10 V operation of an X- and Ku-band power HJFET with the excellent power performance.
ER -