Single Low 2. 4-V Supply Operation GaAs Power MESFET Amplifier with Low-Distortion Gain-Variable Attenuator for 1. 9-GHz PHS Applications

Masami NAGAOKA; Hirotsugu WAKIMOTO; Toshiki SESHITA; Katsue K. KAWAKYU; Yoshiaki KITAURA; Atsushi KAMEYAMA; Naotaka UCHITOMI

Single Low 2. 4-V Supply Operation GaAs Power MESFET Amplifier with Low-Distortion Gain-Variable Attenuator for 1. 9-GHz PHS Applications

Masami NAGAOKA, Hirotsugu WAKIMOTO, Toshiki SESHITA, Katsue K. KAWAKYU, Yoshiaki KITAURA, Atsushi KAMEYAMA, Naotaka UCHITOMI

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A GaAs power MESFET amplifier with a low-distortion, 10-dB gain-variable attenuator has been developed for 1. 9-GHz Japanese personal handy phone system (PHS). Independently of its gain, a very low 600-kHz adjacent channel leakage power (ACP) with sufficient output power was attained. In single low 2. 4-V supply operation, an output power of 21. 1 dBm, a low dissipated current of 157 mA and a high power-added efficiency (PAE) of 37. 2% were obtained with an ACP of -55 dBc.

Publication: IEICE TRANSACTIONS on Electronics Vol.E81-C No.6 pp.911-915

Publication Date: 1998/06/25

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Type of Manuscript: Special Section LETTER (Special Issue on Microwave and Millimeter-Wave Module Technology)

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Masami NAGAOKA, Hirotsugu WAKIMOTO, Toshiki SESHITA, Katsue K. KAWAKYU, Yoshiaki KITAURA, Atsushi KAMEYAMA, Naotaka UCHITOMI, "Single Low 2. 4-V Supply Operation GaAs Power MESFET Amplifier with Low-Distortion Gain-Variable Attenuator for 1. 9-GHz PHS Applications" in IEICE TRANSACTIONS on Electronics, vol. E81-C, no. 6, pp. 911-915, June 1998, doi: .
Abstract: A GaAs power MESFET amplifier with a low-distortion, 10-dB gain-variable attenuator has been developed for 1. 9-GHz Japanese personal handy phone system (PHS). Independently of its gain, a very low 600-kHz adjacent channel leakage power (ACP) with sufficient output power was attained. In single low 2. 4-V supply operation, an output power of 21. 1 dBm, a low dissipated current of 157 mA and a high power-added efficiency (PAE) of 37. 2% were obtained with an ACP of -55 dBc.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/e81-c_6_911/_p

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@ARTICLE{e81-c_6_911,
author={Masami NAGAOKA, Hirotsugu WAKIMOTO, Toshiki SESHITA, Katsue K. KAWAKYU, Yoshiaki KITAURA, Atsushi KAMEYAMA, Naotaka UCHITOMI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Single Low 2. 4-V Supply Operation GaAs Power MESFET Amplifier with Low-Distortion Gain-Variable Attenuator for 1. 9-GHz PHS Applications},
year={1998},
volume={E81-C},
number={6},
pages={911-915},
abstract={A GaAs power MESFET amplifier with a low-distortion, 10-dB gain-variable attenuator has been developed for 1. 9-GHz Japanese personal handy phone system (PHS). Independently of its gain, a very low 600-kHz adjacent channel leakage power (ACP) with sufficient output power was attained. In single low 2. 4-V supply operation, an output power of 21. 1 dBm, a low dissipated current of 157 mA and a high power-added efficiency (PAE) of 37. 2% were obtained with an ACP of -55 dBc.},
keywords={},
doi={},
ISSN={},
month={June},}

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TY - JOUR
TI - Single Low 2. 4-V Supply Operation GaAs Power MESFET Amplifier with Low-Distortion Gain-Variable Attenuator for 1. 9-GHz PHS Applications
T2 - IEICE TRANSACTIONS on Electronics
SP - 911
EP - 915
AU - Masami NAGAOKA
AU - Hirotsugu WAKIMOTO
AU - Toshiki SESHITA
AU - Katsue K. KAWAKYU
AU - Yoshiaki KITAURA
AU - Atsushi KAMEYAMA
AU - Naotaka UCHITOMI
PY - 1998
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E81-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 1998
AB - A GaAs power MESFET amplifier with a low-distortion, 10-dB gain-variable attenuator has been developed for 1. 9-GHz Japanese personal handy phone system (PHS). Independently of its gain, a very low 600-kHz adjacent channel leakage power (ACP) with sufficient output power was attained. In single low 2. 4-V supply operation, an output power of 21. 1 dBm, a low dissipated current of 157 mA and a high power-added efficiency (PAE) of 37. 2% were obtained with an ACP of -55 dBc.
ER -