A 15GHz-band 4-channel transmit/receive RF core-chip is presented for high SHF wide-band massive MIMO in 5G. In order to realize small RF frontend for 5G base stations, both 6bit phase shifters (PS) and 0.25 dB resolution variable gain amplifiers (VGA) are integrated in TX and RX paths of 4-channels on the chip. A PS calibration technique is applied to compensate the error of 6bit PS caused by process variations. A common gate current steering topology with tail current control is used for VGA to enhance the gain control accuracy. The 15GHz-band RF core-chip fabricated in 65 nm CMOS process achieved phase control error of 1.9deg. rms., and amplitude control error of 0.23 dB. rms.

This paper presents an automatic gain control (AGC) system suitable for 60GHz direct conversion receivers. By using a two step gain control algorithm with high-pass filter cutoff frequency switching, the proposed AGC system realizes fast settling time and wide dynamic range simultaneously. The paper also discusses wide-bandwidth variable gain amplifier (VGA) design. By introducing digitally-controlled resistors and gain flattening capacitors, the proposed VGA realizes wide gain range while compensating gain variations due to parasitic capacitance of MOS switches. The AGC system is implemented in a transceiver chipset where RFIC and BBIC are fabricated in 90nm CMOS and 40nm CMOS respectively. The measurement shows excellent dynamic range of 47dB with +/-1dB gain accuracy within 1µs settling time, which satisfies the stringent requirements of the IEEE802.11ad standard.

This paper reports a current-reused pseudo-differential (CRPD) programmable gain amplifier (PGA) that demonstrates small size, low power, wide band, low noise, and high linearity operation with 4 control bits. Implemented in 0.18um CMOS technology, the PGA shows the gain range from -9.9 to 8.3 dB with gain error of less than 0.38 dB. The IIP3, P1 dB, and smallest 3-dB bandwidth are 10.5 to 27 dBm, -9 to 9.5 dBm, and 250 MHz, respectively. The PGA occupies the chip area of 0.04 mm2 and consumes only 460 µA from a 1.2 V supply.

This Paper presents the design of a wideband variable gain amplifier (VGA) using 0.18 µm standard CMOS technology. The proposed VGA realizes wideband flat gain using wideband flat negative capacitance. It achieves a 3 dB gain bandwidth of 1 GHz with a maximum gain of 23 dB. Also, it shows P1 dB of -33 to -6 dBm over the gain range of -28 to 23 dB. The overall current consumption is 5.5 mA under a 1.5 V supply.

Two variable gain amplifiers (VGAs) that adopt new approximated exponential equations are proposed in this paper. The dB-linear range of the proposed VGAs is extended more than what the approximated exponential equations predict by a bias circuit technique that adopts negative feedback. The proposed VGAs feature wide gain variation, low-power, high linearity, wide control signal range, and small chip size. One of the proposed VGAs is fabricated in 0.18 µm CMOS technology and measurements show a gain variation of 83 dB (-3647 dB) with a gain error of less than 2 dB, and P1 dB/IIP3 from -55/8 to -20/20.5 dBm, while consuming an average current of 3.4 mA from a 1.8 V supply; the chip occupies 0.4 mm2. The other VGA is simulated in 0.18 µm CMOS technology and simulations show a gain variation of 91 dB (-4150 dB), and P1 dB/IIP3 from -50/-25 to -33/0 dBm, while consuming an average current of 1.5 mA from a 1.8 V supply.

An all CMOS variable gain amplifier (VGA) which features wide dB-linear gain range per stage (45 dB), low power consumption (1.32 mW), small chip size (0.13 mm2), and low supply voltage (1.2 V) is described. The dB-linear range is extended by reducing the supply voltage of the conventional V-to-I converter. The two-stage VGA implemented in 0.18 µm CMOS offers 90 dB of gain variation, 3 dB bandwidth of greater than 21 MHz, and max/min input IP3 and P1 dB, respectively, of -5/-42 and -12/-50 dBm.

Wired CDMA interface with adaptivity for interconnect capacitances is designed to receive transmitted data even under a wide variety of connection topologies. The variable gain amplifier (VGA) is one of key circuit blocks to realize the adaptivity for interconnect capacitances. The system level numerical simulations derive the VGA specifications that the required VGA gain range is from 0.37 to 2.0, which can be realized easily using a multiple-differential-pair technique.

An intermediate frequency (IF) variable gain amplifier (VGA) with exponential gain control for a radio receiver is fabricated in 0.25-µm CMOS technology. The techniques to improve the bandwidth and to reduce temperature dependence of gain are described. The complete VGA is composed of two stages of linearized transconductance VGA and three stages of fixed gain amplifier (FGA). The complete VGA provides a continuous 10 dB to 76.5 dB gain control range, an IIP3 of -11.5 dBm and an NF of 15 dB at 40 MHz.

A compact low-voltage CMOS exponential current-to-voltage converter free from transconductance parameter matching between NMOS and PMOS is proposed. The circuit is composed of level shift circuits and current mirrors. The SPICE simulation results show a 27 dB linear range with a linearity error of less than 1 dB.

A linear-in-dB VGA of the current-divider type is fabricated in 0.25 µm CMOS technology. Two gain compensation techniques are proposed in order to compensate the gain deviations due to a MOSFET which has a square-law characteristic or an exponential-law characteristic determined by its current density. Temperature compensation techniques are also proposed. Measure results obtained at 380 MHz are a gain range of 80 dB, a gain error of 3 dB, and an NF of 11 dB.

This paper presents a practical implementation scheme of the variable gain amplifier (VGA) using a Cds photo coupler (Cds PC) as a variable resister at the feedback loop. The fundamental design policies of IF amplifier stage in superheterodyne receiver were described. We demonstrated the VGA's experimental results. The results indicated the excellent IIP3 of +25 dBm achieved by a gain of 15 dB, and the reasonable thermal stability and variable gain range. Third-order intermodulation distortion (IMD3) comparison between the proposed VGA and conventional PIN diode attenuation type VGA was evaluated and the result indicated that the proposed VGA surpassed the PIN VGA. The proposed VGA was practically fabricated in 455 kHz IF amplifier stage for an airborne VHF communication receiver in order to improve the large signal handling capability to eliminate numerous interferences resulting from the collocated airborne VHF communication systems on the aircraft.

A broadband RF front-end having a direct conversion architecture has been developed. The RF front-end consists of two broadband quadrature mixers, a multi-band local oscillator, and a broadband low-noise variable gain amplifier (LNVGA). The mixer achieves broadband characteristics through the incorporation of an in-phase power divider and a 45-degree power divider. The in-phase power divider achieves broadband characteristics through the addition of a compensation capacitor. The 45-degree power divider achieves broadband phase characteristics through the addition of a compensation capacitor and a compensation resistor. The local oscillator, which is composed of two VCOs, two frequency dividers, and four switches, can cover three systems including one FDD system. The LNVGA achieves its broadband characteristics without the use of reactance elements, such as inductors or capacitors. In a trial demonstration, when the RF frequency was between 900 MHz and 2.5 GHz, the mixer for a demodulator experimentally demonstrated an amplitude balance of less than 1.6 dB and a quadrature phase error of less than 3 degrees. When the RF frequency was between 900 MHz and 2.5 GHz, the mixer for a modulator demonstrated an image ratio of less than -30 dBc. The local oscillator demonstrated multi-band characteristics, which are able to cover the target frequencies for three systems (PDC, PHS, 2.4 GHz WLAN). From 900 MHz to 2.5 GHz, the amplifier shows a noise figure of less than 2.1 dB and a gain of 28 1.6 dB.

A direct conversion receiver IC including an on-chip balun, an I/Q mixer, a variable gain amplifier and a 90 phase-shifter is fabricated in a Bi-CMOS technology with 15 GHz transition frequency (fT). This paper demonstrates that cascaded connection of an on-chip balun and a double balanced mixer as the I/Q mixer is effective to achieve a low DC offset and a low second-order distortion, on the basis of both careful examination of the mixer behavior and measurement. Input-referred DC offset voltage of less than 300 µV and spurious free dynamic range (SFDR) of over 67 dB are obtained by measurement. The IC consumes 52 mA from 2.7 V power supply voltage. The die size is 3 mm 3 mm.

A GaAs power MESFET amplifier with a low-distortion, 10-dB gain-variable attenuator has been developed for 1. 9-GHz Japanese personal handy phone system (PHS). Independently of its gain, a very low 600-kHz adjacent channel leakage power (ACP) with sufficient output power was attained. In single low 2. 4-V supply operation, an output power of 21. 1 dBm, a low dissipated current of 157 mA and a high power-added efficiency (PAE) of 37. 2% were obtained with an ACP of -55 dBc.