TCAD Challenges for Heterostructure Microelectronics

Eugeny LYUMKIS; Rimvydas MICKEVICIUS; Oleg PENZIN; Boris POLSKY; Karim El SAYED; Andreas WETTSTEIN; Wolfgang FICHTNER

TCAD Challenges for Heterostructure Microelectronics

Eugeny LYUMKIS, Rimvydas MICKEVICIUS, Oleg PENZIN, Boris POLSKY, Karim El SAYED, Andreas WETTSTEIN, Wolfgang FICHTNER

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TCAD is gaining acceptance in the heterostructure industry. This article discusses the specific challenges a device simulator must manage to be a useful tool in designing and optimizing modern heterostructure devices. Example simulation results are given for HEMTs and HBTs, illustrating the complex physical processes in heterostructure devices, such as nonlocal effects in carrier transport, lattice self-heating, hot-electron effects, traps, electron tunneling, and quantum transport.

Publication: IEICE TRANSACTIONS on Electronics Vol.E86-C No.10 pp.1960-1967

Publication Date: 2003/10/01

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Type of Manuscript: Special Section INVITED PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)

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Eugeny LYUMKIS, Rimvydas MICKEVICIUS, Oleg PENZIN, Boris POLSKY, Karim El SAYED, Andreas WETTSTEIN, Wolfgang FICHTNER, "TCAD Challenges for Heterostructure Microelectronics" in IEICE TRANSACTIONS on Electronics, vol. E86-C, no. 10, pp. 1960-1967, October 2003, doi: .
Abstract: TCAD is gaining acceptance in the heterostructure industry. This article discusses the specific challenges a device simulator must manage to be a useful tool in designing and optimizing modern heterostructure devices. Example simulation results are given for HEMTs and HBTs, illustrating the complex physical processes in heterostructure devices, such as nonlocal effects in carrier transport, lattice self-heating, hot-electron effects, traps, electron tunneling, and quantum transport.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/e86-c_10_1960/_p

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@ARTICLE{e86-c_10_1960,
author={Eugeny LYUMKIS, Rimvydas MICKEVICIUS, Oleg PENZIN, Boris POLSKY, Karim El SAYED, Andreas WETTSTEIN, Wolfgang FICHTNER, },
journal={IEICE TRANSACTIONS on Electronics},
title={TCAD Challenges for Heterostructure Microelectronics},
year={2003},
volume={E86-C},
number={10},
pages={1960-1967},
abstract={TCAD is gaining acceptance in the heterostructure industry. This article discusses the specific challenges a device simulator must manage to be a useful tool in designing and optimizing modern heterostructure devices. Example simulation results are given for HEMTs and HBTs, illustrating the complex physical processes in heterostructure devices, such as nonlocal effects in carrier transport, lattice self-heating, hot-electron effects, traps, electron tunneling, and quantum transport.},
keywords={},
doi={},
ISSN={},
month={October},}

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TY - JOUR
TI - TCAD Challenges for Heterostructure Microelectronics
T2 - IEICE TRANSACTIONS on Electronics
SP - 1960
EP - 1967
AU - Eugeny LYUMKIS
AU - Rimvydas MICKEVICIUS
AU - Oleg PENZIN
AU - Boris POLSKY
AU - Karim El SAYED
AU - Andreas WETTSTEIN
AU - Wolfgang FICHTNER
PY - 2003
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E86-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2003
AB - TCAD is gaining acceptance in the heterostructure industry. This article discusses the specific challenges a device simulator must manage to be a useful tool in designing and optimizing modern heterostructure devices. Example simulation results are given for HEMTs and HBTs, illustrating the complex physical processes in heterostructure devices, such as nonlocal effects in carrier transport, lattice self-heating, hot-electron effects, traps, electron tunneling, and quantum transport.
ER -