First Microwave Characteristics of InGaAlAs/GaAsSb/InP Double HBTs

Xin ZHU; Dimitris PAVLIDIS; Guangyuan ZHAO; Philippe BOVE; Hacene LAHRECHE; Robert LANGER

First Microwave Characteristics of InGaAlAs/GaAsSb/InP Double HBTs

Xin ZHU, Dimitris PAVLIDIS, Guangyuan ZHAO, Philippe BOVE, Hacene LAHRECHE, Robert LANGER

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We report for the first time the design, process and characterization of InP-based micrometer emitter InGaAlAs/GaAsSb/InP Double HBTs (DHBTs) and their microwave performance. The layer structure not only allows the implementation of InP collector free of current blocking, but also enables small turn-on voltage and ballistic launching of electrons due to the positive conduction band discontinuity of emitter to base. The DHBT structure was grown on nominal (001) InP substrates using MBE. Solid Si and CBr₄ gas were used for n-type and p-type doing respectively. Fabricated large DHBTs showed high DC gain (> 80), small turn-on voltage 0.62 V, almost zero offset voltage, and nearly ideal base and collector current characteristics (ideality factors 1.0 for both B-E and B-C junctions). Small DHBTs demonstrated V_CEO > 8 V and stable operation at high current density exceeding 100 kA/cm². Maximum f_T of 57 GHz and maximum f_max of 66 GHz were achieved from 1 20 µm² devices at similar bias condition: J_C = 8.0 10⁴ A/cm² and V_CE =3.5 V. The InGaAlAs/GaAsSb/InP DHBTs appear to be a very promising HBT solution having simultaneous excellent RF and DC performances.

Publication: IEICE TRANSACTIONS on Electronics Vol.E86-C No.10 pp.2010-2014

Publication Date: 2003/10/01

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Type of Manuscript: Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)

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Xin ZHU, Dimitris PAVLIDIS, Guangyuan ZHAO, Philippe BOVE, Hacene LAHRECHE, Robert LANGER, "First Microwave Characteristics of InGaAlAs/GaAsSb/InP Double HBTs" in IEICE TRANSACTIONS on Electronics, vol. E86-C, no. 10, pp. 2010-2014, October 2003, doi: .
Abstract: We report for the first time the design, process and characterization of InP-based micrometer emitter InGaAlAs/GaAsSb/InP Double HBTs (DHBTs) and their microwave performance. The layer structure not only allows the implementation of InP collector free of current blocking, but also enables small turn-on voltage and ballistic launching of electrons due to the positive conduction band discontinuity of emitter to base. The DHBT structure was grown on nominal (001) InP substrates using MBE. Solid Si and CBr₄ gas were used for n-type and p-type doing respectively. Fabricated large DHBTs showed high DC gain (> 80), small turn-on voltage 0.62 V, almost zero offset voltage, and nearly ideal base and collector current characteristics (ideality factors 1.0 for both B-E and B-C junctions). Small DHBTs demonstrated V_CEO > 8 V and stable operation at high current density exceeding 100 kA/cm². Maximum f_T of 57 GHz and maximum f_max of 66 GHz were achieved from 1 20 µm² devices at similar bias condition: J_C = 8.0 10⁴ A/cm² and V_CE =3.5 V. The InGaAlAs/GaAsSb/InP DHBTs appear to be a very promising HBT solution having simultaneous excellent RF and DC performances.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/e86-c_10_2010/_p

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@ARTICLE{e86-c_10_2010,
author={Xin ZHU, Dimitris PAVLIDIS, Guangyuan ZHAO, Philippe BOVE, Hacene LAHRECHE, Robert LANGER, },
journal={IEICE TRANSACTIONS on Electronics},
title={First Microwave Characteristics of InGaAlAs/GaAsSb/InP Double HBTs},
year={2003},
volume={E86-C},
number={10},
pages={2010-2014},
abstract={We report for the first time the design, process and characterization of InP-based micrometer emitter InGaAlAs/GaAsSb/InP Double HBTs (DHBTs) and their microwave performance. The layer structure not only allows the implementation of InP collector free of current blocking, but also enables small turn-on voltage and ballistic launching of electrons due to the positive conduction band discontinuity of emitter to base. The DHBT structure was grown on nominal (001) InP substrates using MBE. Solid Si and CBr₄ gas were used for n-type and p-type doing respectively. Fabricated large DHBTs showed high DC gain (> 80), small turn-on voltage 0.62 V, almost zero offset voltage, and nearly ideal base and collector current characteristics (ideality factors 1.0 for both B-E and B-C junctions). Small DHBTs demonstrated V_CEO > 8 V and stable operation at high current density exceeding 100 kA/cm². Maximum f_T of 57 GHz and maximum f_max of 66 GHz were achieved from 1 20 µm² devices at similar bias condition: J_C = 8.0 10⁴ A/cm² and V_CE =3.5 V. The InGaAlAs/GaAsSb/InP DHBTs appear to be a very promising HBT solution having simultaneous excellent RF and DC performances.},
keywords={},
doi={},
ISSN={},
month={October},}

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TY - JOUR
TI - First Microwave Characteristics of InGaAlAs/GaAsSb/InP Double HBTs
T2 - IEICE TRANSACTIONS on Electronics
SP - 2010
EP - 2014
AU - Xin ZHU
AU - Dimitris PAVLIDIS
AU - Guangyuan ZHAO
AU - Philippe BOVE
AU - Hacene LAHRECHE
AU - Robert LANGER
PY - 2003
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E86-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2003
AB - We report for the first time the design, process and characterization of InP-based micrometer emitter InGaAlAs/GaAsSb/InP Double HBTs (DHBTs) and their microwave performance. The layer structure not only allows the implementation of InP collector free of current blocking, but also enables small turn-on voltage and ballistic launching of electrons due to the positive conduction band discontinuity of emitter to base. The DHBT structure was grown on nominal (001) InP substrates using MBE. Solid Si and CBr₄ gas were used for n-type and p-type doing respectively. Fabricated large DHBTs showed high DC gain (> 80), small turn-on voltage 0.62 V, almost zero offset voltage, and nearly ideal base and collector current characteristics (ideality factors 1.0 for both B-E and B-C junctions). Small DHBTs demonstrated V_CEO > 8 V and stable operation at high current density exceeding 100 kA/cm². Maximum f_T of 57 GHz and maximum f_max of 66 GHz were achieved from 1 20 µm² devices at similar bias condition: J_C = 8.0 10⁴ A/cm² and V_CE =3.5 V. The InGaAlAs/GaAsSb/InP DHBTs appear to be a very promising HBT solution having simultaneous excellent RF and DC performances.
ER -