Two-Dimensional Device Simulation of 0.05 µm-Gate AlGaN/GaN HEMT

Yoshifumi KAWAKAMI; Naohiro KUZE; Jin-Ping AO; Yasuo OHNO

Two-Dimensional Device Simulation of 0.05 µm-Gate AlGaN/GaN HEMT

Yoshifumi KAWAKAMI, Naohiro KUZE, Jin-Ping AO, Yasuo OHNO

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DC and RF performances of AlGaN/GaN HEMTs are simulated using a two-dimensional device simulator with the material parameters of GaN and AlGaN. The cut-off frequency is estimated as 205 GHz at the gate length of 0.05 µm and the drain breakdown voltage at this gate length is over 10 V. The values are satisfactory for millimeter wavelength power applications. The use of thin AlGaN layers has key importance to alleviate gate parasitic capacitance effects at this gate length.

Publication: IEICE TRANSACTIONS on Electronics Vol.E86-C No.10 pp.2039-2042

Publication Date: 2003/10/01

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Type of Manuscript: Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)

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Yoshifumi KAWAKAMI, Naohiro KUZE, Jin-Ping AO, Yasuo OHNO, "Two-Dimensional Device Simulation of 0.05 µm-Gate AlGaN/GaN HEMT" in IEICE TRANSACTIONS on Electronics, vol. E86-C, no. 10, pp. 2039-2042, October 2003, doi: .
Abstract: DC and RF performances of AlGaN/GaN HEMTs are simulated using a two-dimensional device simulator with the material parameters of GaN and AlGaN. The cut-off frequency is estimated as 205 GHz at the gate length of 0.05 µm and the drain breakdown voltage at this gate length is over 10 V. The values are satisfactory for millimeter wavelength power applications. The use of thin AlGaN layers has key importance to alleviate gate parasitic capacitance effects at this gate length.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/e86-c_10_2039/_p

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@ARTICLE{e86-c_10_2039,
author={Yoshifumi KAWAKAMI, Naohiro KUZE, Jin-Ping AO, Yasuo OHNO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Two-Dimensional Device Simulation of 0.05 µm-Gate AlGaN/GaN HEMT},
year={2003},
volume={E86-C},
number={10},
pages={2039-2042},
abstract={DC and RF performances of AlGaN/GaN HEMTs are simulated using a two-dimensional device simulator with the material parameters of GaN and AlGaN. The cut-off frequency is estimated as 205 GHz at the gate length of 0.05 µm and the drain breakdown voltage at this gate length is over 10 V. The values are satisfactory for millimeter wavelength power applications. The use of thin AlGaN layers has key importance to alleviate gate parasitic capacitance effects at this gate length.},
keywords={},
doi={},
ISSN={},
month={October},}

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TY - JOUR
TI - Two-Dimensional Device Simulation of 0.05 µm-Gate AlGaN/GaN HEMT
T2 - IEICE TRANSACTIONS on Electronics
SP - 2039
EP - 2042
AU - Yoshifumi KAWAKAMI
AU - Naohiro KUZE
AU - Jin-Ping AO
AU - Yasuo OHNO
PY - 2003
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E86-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2003
AB - DC and RF performances of AlGaN/GaN HEMTs are simulated using a two-dimensional device simulator with the material parameters of GaN and AlGaN. The cut-off frequency is estimated as 205 GHz at the gate length of 0.05 µm and the drain breakdown voltage at this gate length is over 10 V. The values are satisfactory for millimeter wavelength power applications. The use of thin AlGaN layers has key importance to alleviate gate parasitic capacitance effects at this gate length.
ER -