Three Dimensional MOSFET Simulation for Analyzing Statistical Dopant-Induced Fluctuations Associated with Atomistic Process Simulator

Tatsuya EZAKI; Takeo IKEZAWA; Akio NOTSU; Katsuhiko TANAKA; Masami HANE

Three Dimensional MOSFET Simulation for Analyzing Statistical Dopant-Induced Fluctuations Associated with Atomistic Process Simulator

Tatsuya EZAKI, Takeo IKEZAWA, Akio NOTSU, Katsuhiko TANAKA, Masami HANE

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A realistic 3-D process/device simulation method was developed for investigating the fluctuation in device characteristics induced by the statistical nature of the number and position of discrete dopant atoms. Monte Carlo procedures are applied for both ion implantation and dopant diffusion/activation simulations. Atomistic potential profile for device simulation is calculated from discrete dopant atom positions by incorporating the long-range part of Coulomb potential. This simulation was used to investigate the variations in characteristics of sub-100 nm CMOS devices induced by realistic dopant fluctuations considering practical device fabrication processes. In particular, sensitivity analysis of the threshold voltage fluctuation was performed in terms of the independent dopant contribution, such as that of the dopant in the source/drain or channel region.

Publication: IEICE TRANSACTIONS on Electronics Vol.E86-C No.3 pp.409-415

Publication Date: 2003/03/01

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Type of Manuscript: Special Section INVITED PAPER (Special Issue on the 2002 IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'02))

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Tatsuya EZAKI, Takeo IKEZAWA, Akio NOTSU, Katsuhiko TANAKA, Masami HANE, "Three Dimensional MOSFET Simulation for Analyzing Statistical Dopant-Induced Fluctuations Associated with Atomistic Process Simulator" in IEICE TRANSACTIONS on Electronics, vol. E86-C, no. 3, pp. 409-415, March 2003, doi: .
Abstract: A realistic 3-D process/device simulation method was developed for investigating the fluctuation in device characteristics induced by the statistical nature of the number and position of discrete dopant atoms. Monte Carlo procedures are applied for both ion implantation and dopant diffusion/activation simulations. Atomistic potential profile for device simulation is calculated from discrete dopant atom positions by incorporating the long-range part of Coulomb potential. This simulation was used to investigate the variations in characteristics of sub-100 nm CMOS devices induced by realistic dopant fluctuations considering practical device fabrication processes. In particular, sensitivity analysis of the threshold voltage fluctuation was performed in terms of the independent dopant contribution, such as that of the dopant in the source/drain or channel region.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/e86-c_3_409/_p

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@ARTICLE{e86-c_3_409,
author={Tatsuya EZAKI, Takeo IKEZAWA, Akio NOTSU, Katsuhiko TANAKA, Masami HANE, },
journal={IEICE TRANSACTIONS on Electronics},
title={Three Dimensional MOSFET Simulation for Analyzing Statistical Dopant-Induced Fluctuations Associated with Atomistic Process Simulator},
year={2003},
volume={E86-C},
number={3},
pages={409-415},
abstract={A realistic 3-D process/device simulation method was developed for investigating the fluctuation in device characteristics induced by the statistical nature of the number and position of discrete dopant atoms. Monte Carlo procedures are applied for both ion implantation and dopant diffusion/activation simulations. Atomistic potential profile for device simulation is calculated from discrete dopant atom positions by incorporating the long-range part of Coulomb potential. This simulation was used to investigate the variations in characteristics of sub-100 nm CMOS devices induced by realistic dopant fluctuations considering practical device fabrication processes. In particular, sensitivity analysis of the threshold voltage fluctuation was performed in terms of the independent dopant contribution, such as that of the dopant in the source/drain or channel region.},
keywords={},
doi={},
ISSN={},
month={March},}

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TY - JOUR
TI - Three Dimensional MOSFET Simulation for Analyzing Statistical Dopant-Induced Fluctuations Associated with Atomistic Process Simulator
T2 - IEICE TRANSACTIONS on Electronics
SP - 409
EP - 415
AU - Tatsuya EZAKI
AU - Takeo IKEZAWA
AU - Akio NOTSU
AU - Katsuhiko TANAKA
AU - Masami HANE
PY - 2003
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E86-C
IS - 3
JA - IEICE TRANSACTIONS on Electronics
Y1 - March 2003
AB - A realistic 3-D process/device simulation method was developed for investigating the fluctuation in device characteristics induced by the statistical nature of the number and position of discrete dopant atoms. Monte Carlo procedures are applied for both ion implantation and dopant diffusion/activation simulations. Atomistic potential profile for device simulation is calculated from discrete dopant atom positions by incorporating the long-range part of Coulomb potential. This simulation was used to investigate the variations in characteristics of sub-100 nm CMOS devices induced by realistic dopant fluctuations considering practical device fabrication processes. In particular, sensitivity analysis of the threshold voltage fluctuation was performed in terms of the independent dopant contribution, such as that of the dopant in the source/drain or channel region.
ER -