Simulation of RF Noise in MOSFETs Using Different Transport Models

Andreas SCHENK; Bernhard SCHMITHUSEN; Andreas WETTSTEIN; Axel ERLEBACH; Simon BRUGGER; Fabian M. BUFLER; Thomas FEUDEL; Wolfgang FICHTNER

Simulation of RF Noise in MOSFETs Using Different Transport Models

Andreas SCHENK, Bernhard SCHMITHUSEN, Andreas WETTSTEIN, Axel ERLEBACH, Simon BRUGGER, Fabian M. BUFLER, Thomas FEUDEL, Wolfgang FICHTNER

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RF noise in quarter-micron nMOSFETs is analysed on the device level based on Shockley's impedance field method. The impact of different transport models and physical parameters is discussed in detail. Well-calibrated drift-diffusion and energy-balance models give very similar results for noise current spectral densities and noise figures. We show by numerical simulations with the general-purpose device simulator DESSIS__ISE that the hot-electron effect on RF noise is unimportant under normal operating conditions and that thermal substrate noise is dominant below 0.5 GHz. The contribution of energy-current fluctuations to the terminal noise is found to be negligible. Application of noise sources generated in bulk full-band Monte Carlo simulations changes the noise figures considerably, which underlines the importance of proper noise source models for far-from-equilibrium conditions.

Publication: IEICE TRANSACTIONS on Electronics Vol.E86-C No.3 pp.481-489

Publication Date: 2003/03/01

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Type of Manuscript: PAPER

Category: Device Modeling and Simulation

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Andreas SCHENK, Bernhard SCHMITHUSEN, Andreas WETTSTEIN, Axel ERLEBACH, Simon BRUGGER, Fabian M. BUFLER, Thomas FEUDEL, Wolfgang FICHTNER, "Simulation of RF Noise in MOSFETs Using Different Transport Models" in IEICE TRANSACTIONS on Electronics, vol. E86-C, no. 3, pp. 481-489, March 2003, doi: .
Abstract: RF noise in quarter-micron nMOSFETs is analysed on the device level based on Shockley's impedance field method. The impact of different transport models and physical parameters is discussed in detail. Well-calibrated drift-diffusion and energy-balance models give very similar results for noise current spectral densities and noise figures. We show by numerical simulations with the general-purpose device simulator DESSIS__ISE that the hot-electron effect on RF noise is unimportant under normal operating conditions and that thermal substrate noise is dominant below 0.5 GHz. The contribution of energy-current fluctuations to the terminal noise is found to be negligible. Application of noise sources generated in bulk full-band Monte Carlo simulations changes the noise figures considerably, which underlines the importance of proper noise source models for far-from-equilibrium conditions.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/e86-c_3_481/_p

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@ARTICLE{e86-c_3_481,
author={Andreas SCHENK, Bernhard SCHMITHUSEN, Andreas WETTSTEIN, Axel ERLEBACH, Simon BRUGGER, Fabian M. BUFLER, Thomas FEUDEL, Wolfgang FICHTNER, },
journal={IEICE TRANSACTIONS on Electronics},
title={Simulation of RF Noise in MOSFETs Using Different Transport Models},
year={2003},
volume={E86-C},
number={3},
pages={481-489},
abstract={RF noise in quarter-micron nMOSFETs is analysed on the device level based on Shockley's impedance field method. The impact of different transport models and physical parameters is discussed in detail. Well-calibrated drift-diffusion and energy-balance models give very similar results for noise current spectral densities and noise figures. We show by numerical simulations with the general-purpose device simulator DESSIS__ISE that the hot-electron effect on RF noise is unimportant under normal operating conditions and that thermal substrate noise is dominant below 0.5 GHz. The contribution of energy-current fluctuations to the terminal noise is found to be negligible. Application of noise sources generated in bulk full-band Monte Carlo simulations changes the noise figures considerably, which underlines the importance of proper noise source models for far-from-equilibrium conditions.},
keywords={},
doi={},
ISSN={},
month={March},}

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TY - JOUR
TI - Simulation of RF Noise in MOSFETs Using Different Transport Models
T2 - IEICE TRANSACTIONS on Electronics
SP - 481
EP - 489
AU - Andreas SCHENK
AU - Bernhard SCHMITHUSEN
AU - Andreas WETTSTEIN
AU - Axel ERLEBACH
AU - Simon BRUGGER
AU - Fabian M. BUFLER
AU - Thomas FEUDEL
AU - Wolfgang FICHTNER
PY - 2003
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E86-C
IS - 3
JA - IEICE TRANSACTIONS on Electronics
Y1 - March 2003
AB - RF noise in quarter-micron nMOSFETs is analysed on the device level based on Shockley's impedance field method. The impact of different transport models and physical parameters is discussed in detail. Well-calibrated drift-diffusion and energy-balance models give very similar results for noise current spectral densities and noise figures. We show by numerical simulations with the general-purpose device simulator DESSIS__ISE that the hot-electron effect on RF noise is unimportant under normal operating conditions and that thermal substrate noise is dominant below 0.5 GHz. The contribution of energy-current fluctuations to the terminal noise is found to be negligible. Application of noise sources generated in bulk full-band Monte Carlo simulations changes the noise figures considerably, which underlines the importance of proper noise source models for far-from-equilibrium conditions.
ER -