60-GHz Band Copper Ball Vertical Interconnection for MMW 3-D System-in-Package Front-End Modules

Satoshi YOSHIDA; Shoichi TANIFUJI; Suguru KAMEDA; Noriharu SUEMATSU; Tadashi TAKAGI; Kazuo TSUBOUCHI

doi:10.1587/transele.E95.C.1276

60-GHz Band Copper Ball Vertical Interconnection for MMW 3-D System-in-Package Front-End Modules

Satoshi YOSHIDA, Shoichi TANIFUJI, Suguru KAMEDA, Noriharu SUEMATSU, Tadashi TAKAGI, Kazuo TSUBOUCHI

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In order to realize millimeter-wave (MMW) 3-D system-in-package (SiP) front-end modules, we propose a 60-GHz band copper ball vertical interconnection structure, which interconnects between vertically stacked substrates. The structure enables ICs to be placed between the vertically stacked substrates. Since the diameter of the copper balls must exceed the thickness of the ICs, the distance between the substrates in the modules is larger than that of the flip-chip interconnection widely used in the MMW-band. Therefore, the conventional flip-chip interconnection does not scale for the interconnection between the substrates in MMW 3-D SiP front-end modules. The layout of grounded copper balls and the patterns of inner ground layers in the upper/lower substrates are designed using 3-D electromagnetic field simulation. The designed structure allows less than 1 dB transmission loss up to 71.1 GHz, compared with a through transmission line. The result is verified with fabrication and measurement and confirms the feasibility of MMW 3-D SiP front-end modules.

Publication: IEICE TRANSACTIONS on Electronics Vol.E95-C No.7 pp.1276-1284

Publication Date: 2012/07/01

Publicized

Online ISSN: 1745-1353

DOI: 10.1587/transele.E95.C.1276

Type of Manuscript: PAPER

Category: Microwaves, Millimeter-Waves

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Satoshi YOSHIDA, Shoichi TANIFUJI, Suguru KAMEDA, Noriharu SUEMATSU, Tadashi TAKAGI, Kazuo TSUBOUCHI, "60-GHz Band Copper Ball Vertical Interconnection for MMW 3-D System-in-Package Front-End Modules" in IEICE TRANSACTIONS on Electronics, vol. E95-C, no. 7, pp. 1276-1284, July 2012, doi: 10.1587/transele.E95.C.1276.
Abstract: In order to realize millimeter-wave (MMW) 3-D system-in-package (SiP) front-end modules, we propose a 60-GHz band copper ball vertical interconnection structure, which interconnects between vertically stacked substrates. The structure enables ICs to be placed between the vertically stacked substrates. Since the diameter of the copper balls must exceed the thickness of the ICs, the distance between the substrates in the modules is larger than that of the flip-chip interconnection widely used in the MMW-band. Therefore, the conventional flip-chip interconnection does not scale for the interconnection between the substrates in MMW 3-D SiP front-end modules. The layout of grounded copper balls and the patterns of inner ground layers in the upper/lower substrates are designed using 3-D electromagnetic field simulation. The designed structure allows less than 1 dB transmission loss up to 71.1 GHz, compared with a through transmission line. The result is verified with fabrication and measurement and confirms the feasibility of MMW 3-D SiP front-end modules.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/transele.E95.C.1276/_p

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@ARTICLE{e95-c_7_1276,
author={Satoshi YOSHIDA, Shoichi TANIFUJI, Suguru KAMEDA, Noriharu SUEMATSU, Tadashi TAKAGI, Kazuo TSUBOUCHI, },
journal={IEICE TRANSACTIONS on Electronics},
title={60-GHz Band Copper Ball Vertical Interconnection for MMW 3-D System-in-Package Front-End Modules},
year={2012},
volume={E95-C},
number={7},
pages={1276-1284},
abstract={In order to realize millimeter-wave (MMW) 3-D system-in-package (SiP) front-end modules, we propose a 60-GHz band copper ball vertical interconnection structure, which interconnects between vertically stacked substrates. The structure enables ICs to be placed between the vertically stacked substrates. Since the diameter of the copper balls must exceed the thickness of the ICs, the distance between the substrates in the modules is larger than that of the flip-chip interconnection widely used in the MMW-band. Therefore, the conventional flip-chip interconnection does not scale for the interconnection between the substrates in MMW 3-D SiP front-end modules. The layout of grounded copper balls and the patterns of inner ground layers in the upper/lower substrates are designed using 3-D electromagnetic field simulation. The designed structure allows less than 1 dB transmission loss up to 71.1 GHz, compared with a through transmission line. The result is verified with fabrication and measurement and confirms the feasibility of MMW 3-D SiP front-end modules.},
keywords={},
doi={10.1587/transele.E95.C.1276},
ISSN={1745-1353},
month={July},}

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TY - JOUR
TI - 60-GHz Band Copper Ball Vertical Interconnection for MMW 3-D System-in-Package Front-End Modules
T2 - IEICE TRANSACTIONS on Electronics
SP - 1276
EP - 1284
AU - Satoshi YOSHIDA
AU - Shoichi TANIFUJI
AU - Suguru KAMEDA
AU - Noriharu SUEMATSU
AU - Tadashi TAKAGI
AU - Kazuo TSUBOUCHI
PY - 2012
DO - 10.1587/transele.E95.C.1276
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E95-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2012
AB - In order to realize millimeter-wave (MMW) 3-D system-in-package (SiP) front-end modules, we propose a 60-GHz band copper ball vertical interconnection structure, which interconnects between vertically stacked substrates. The structure enables ICs to be placed between the vertically stacked substrates. Since the diameter of the copper balls must exceed the thickness of the ICs, the distance between the substrates in the modules is larger than that of the flip-chip interconnection widely used in the MMW-band. Therefore, the conventional flip-chip interconnection does not scale for the interconnection between the substrates in MMW 3-D SiP front-end modules. The layout of grounded copper balls and the patterns of inner ground layers in the upper/lower substrates are designed using 3-D electromagnetic field simulation. The designed structure allows less than 1 dB transmission loss up to 71.1 GHz, compared with a through transmission line. The result is verified with fabrication and measurement and confirms the feasibility of MMW 3-D SiP front-end modules.
ER -