Tunable CMOS Power Amplifiers for Reconfigurable Transceivers

JeeYoung HONG; Daisuke IMANISHI; Kenichi OKADA; Akira MATSUZAWA

doi:10.1587/transfun.E94.A.2394

Tunable CMOS Power Amplifiers for Reconfigurable Transceivers

JeeYoung HONG, Daisuke IMANISHI, Kenichi OKADA, Akira MATSUZAWA

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This paper presents three CMOS power amplifiers (PA) which realize wide-tunable output impedance matching. For realization of multi-standard and single-chip transceiver, the prototypes were fabricated by 0.18 µm CMOS process. The proposed PAs can achieve a tunable impedance matching within a wide frequency range by utilizing a resistive feedback and parallel resonator with an inductor and capacitor array. Therefore, the proposed PA has a realization possibility of isolator-less PA which contributes to decrease die area including external component. In other words, the PAs have tunable impedance matching function at their output ends. With a 3.3-V supply, three power amplifiers can cover frequency ranges of 0.9–3.0 GHz, 2.1–5.8 GHz, and 5.7–9.7 GHz, respectively. The PAs realize P_{1 dB} of 21 dBm, P_sat of 22 dBm, and PAE_peak of larger than 23%. The proposed PAs present a potential to realize multi-band transceivers without isolators.

Publication: IEICE TRANSACTIONS on Fundamentals Vol.E94-A No.11 pp.2394-2401

Publication Date: 2011/11/01

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Online ISSN: 1745-1337

DOI: 10.1587/transfun.E94.A.2394

Type of Manuscript: PAPER

Category: Circuit Theory

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JeeYoung HONG, Daisuke IMANISHI, Kenichi OKADA, Akira MATSUZAWA, "Tunable CMOS Power Amplifiers for Reconfigurable Transceivers" in IEICE TRANSACTIONS on Fundamentals, vol. E94-A, no. 11, pp. 2394-2401, November 2011, doi: 10.1587/transfun.E94.A.2394.
Abstract: This paper presents three CMOS power amplifiers (PA) which realize wide-tunable output impedance matching. For realization of multi-standard and single-chip transceiver, the prototypes were fabricated by 0.18 µm CMOS process. The proposed PAs can achieve a tunable impedance matching within a wide frequency range by utilizing a resistive feedback and parallel resonator with an inductor and capacitor array. Therefore, the proposed PA has a realization possibility of isolator-less PA which contributes to decrease die area including external component. In other words, the PAs have tunable impedance matching function at their output ends. With a 3.3-V supply, three power amplifiers can cover frequency ranges of 0.9–3.0 GHz, 2.1–5.8 GHz, and 5.7–9.7 GHz, respectively. The PAs realize P_{1 dB} of 21 dBm, P_sat of 22 dBm, and PAE_peak of larger than 23%. The proposed PAs present a potential to realize multi-band transceivers without isolators.
URL: https://globals.ieice.org/en_transactions/fundamentals/10.1587/transfun.E94.A.2394/_p

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@ARTICLE{e94-a_11_2394,
author={JeeYoung HONG, Daisuke IMANISHI, Kenichi OKADA, Akira MATSUZAWA, },
journal={IEICE TRANSACTIONS on Fundamentals},
title={Tunable CMOS Power Amplifiers for Reconfigurable Transceivers},
year={2011},
volume={E94-A},
number={11},
pages={2394-2401},
abstract={This paper presents three CMOS power amplifiers (PA) which realize wide-tunable output impedance matching. For realization of multi-standard and single-chip transceiver, the prototypes were fabricated by 0.18 µm CMOS process. The proposed PAs can achieve a tunable impedance matching within a wide frequency range by utilizing a resistive feedback and parallel resonator with an inductor and capacitor array. Therefore, the proposed PA has a realization possibility of isolator-less PA which contributes to decrease die area including external component. In other words, the PAs have tunable impedance matching function at their output ends. With a 3.3-V supply, three power amplifiers can cover frequency ranges of 0.9–3.0 GHz, 2.1–5.8 GHz, and 5.7–9.7 GHz, respectively. The PAs realize P_{1 dB} of 21 dBm, P_sat of 22 dBm, and PAE_peak of larger than 23%. The proposed PAs present a potential to realize multi-band transceivers without isolators.},
keywords={},
doi={10.1587/transfun.E94.A.2394},
ISSN={1745-1337},
month={November},}

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TY - JOUR
TI - Tunable CMOS Power Amplifiers for Reconfigurable Transceivers
T2 - IEICE TRANSACTIONS on Fundamentals
SP - 2394
EP - 2401
AU - JeeYoung HONG
AU - Daisuke IMANISHI
AU - Kenichi OKADA
AU - Akira MATSUZAWA
PY - 2011
DO - 10.1587/transfun.E94.A.2394
JO - IEICE TRANSACTIONS on Fundamentals
SN - 1745-1337
VL - E94-A
IS - 11
JA - IEICE TRANSACTIONS on Fundamentals
Y1 - November 2011
AB - This paper presents three CMOS power amplifiers (PA) which realize wide-tunable output impedance matching. For realization of multi-standard and single-chip transceiver, the prototypes were fabricated by 0.18 µm CMOS process. The proposed PAs can achieve a tunable impedance matching within a wide frequency range by utilizing a resistive feedback and parallel resonator with an inductor and capacitor array. Therefore, the proposed PA has a realization possibility of isolator-less PA which contributes to decrease die area including external component. In other words, the PAs have tunable impedance matching function at their output ends. With a 3.3-V supply, three power amplifiers can cover frequency ranges of 0.9–3.0 GHz, 2.1–5.8 GHz, and 5.7–9.7 GHz, respectively. The PAs realize P_{1 dB} of 21 dBm, P_sat of 22 dBm, and PAE_peak of larger than 23%. The proposed PAs present a potential to realize multi-band transceivers without isolators.
ER -