An X-Band 12 W GaAs Monolithic Transmit-Receive Switch

Makoto MATSUNAGA; Yoshitada IYAMA; Kazuhiko NAKAHARA; Fumio TAKEDA

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Makoto MATSUNAGA, Yoshitada IYAMA, Kazuhiko NAKAHARA, Fumio TAKEDA, "An X-Band 12 W GaAs Monolithic Transmit-Receive Switch" in IEICE TRANSACTIONS on transactions, vol. E70-E, no. 4, pp. 259-260, April 1987, doi: .
Abstract: This letter describes a high power monolithic GaAs FET transmit-receive switch (TR switch) with two FETs. Both FETs operate in the same states, low impedance state in transmitting and high in receiving, so rf voltage imposed on FET is low both in transmitting and receiving. The developed TR switch can handle more than 12 W peak power at X-band frequencies.
URL: https://globals.ieice.org/en_transactions/transactions/10.1587/e70-e_4_259/_p

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@ARTICLE{e70-e_4_259,
author={Makoto MATSUNAGA, Yoshitada IYAMA, Kazuhiko NAKAHARA, Fumio TAKEDA, },
journal={IEICE TRANSACTIONS on transactions},
title={An X-Band 12 W GaAs Monolithic Transmit-Receive Switch},
year={1987},
volume={E70-E},
number={4},
pages={259-260},
abstract={This letter describes a high power monolithic GaAs FET transmit-receive switch (TR switch) with two FETs. Both FETs operate in the same states, low impedance state in transmitting and high in receiving, so rf voltage imposed on FET is low both in transmitting and receiving. The developed TR switch can handle more than 12 W peak power at X-band frequencies.},
keywords={},
doi={},
ISSN={},
month={April},}

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TY - JOUR
TI - An X-Band 12 W GaAs Monolithic Transmit-Receive Switch
T2 - IEICE TRANSACTIONS on transactions
SP - 259
EP - 260
AU - Makoto MATSUNAGA
AU - Yoshitada IYAMA
AU - Kazuhiko NAKAHARA
AU - Fumio TAKEDA
PY - 1987
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E70-E
IS - 4
JA - IEICE TRANSACTIONS on transactions
Y1 - April 1987
AB - This letter describes a high power monolithic GaAs FET transmit-receive switch (TR switch) with two FETs. Both FETs operate in the same states, low impedance state in transmitting and high in receiving, so rf voltage imposed on FET is low both in transmitting and receiving. The developed TR switch can handle more than 12 W peak power at X-band frequencies.
ER -