1-4hit |
Yoji ISOTA Osami ISHIDA Fumio TAKEDA
Adaptive antenna is a promising to increase the spectral efficiency of mobile radio systems. We developed a compact, cost effective planar Butler Matrix as a beam forming network of a multi beam antenna. This circuit consists of a thin substrate that the conductor attaches to both sides, and two thick substrates that the ground conductor attaches to one side. In this circuit, coupling by crossover causes amplitude and phase error of the Butler Matrix. By narrowing the strip width of the crossover, crossover coupling can be suppressed 10 dB. The measurement results of the experimental 88 Butler Matrix were 0.75 dB amplitude deviation, 9.5 degree phase deviation and VSWR of less than 1.15 within the relative bandwidth of 10% at 900 MHz band.
Osami ISHIDA Yoji ISOTA Moriyasu MIYAZAKI Fumio TAKEDA Norio TAKEUCHI
This letter describes a novel coupled-transmission-line directional coupler using an asymmetrical suspended stripline with unequal conducting strips on both sides of a dielectric substrate. The directional coupler has a rang of coupling values from 5 to 9 dB which is difficult to be realized by a conventional symmetrical suspended stripline coupler.
Tadashi TAKAGI Kiyoharu SEINO Takuo KASHIWA Tsutomu HASHIMOTO Fumio TAKEDA
A Ka-band 0.5 W monolithic amplifier using a novel tandem FET has been developed. The tandem FET consists of two FET cells connected in series through a short transmission line. The features of the tandem FET are high gain, flat gain response and miniaturized size. The tandem FET is very useful for obtaining high gain, high power amplifiers operating in millimeter-wave region where combining and matching circuits' losses are significantly large. By combining four tandem FETs, a linear gain of 4.5 dB, a 1 dB compressed power of 26.3 dBm and a saturated output power of 27.3 dBm (0.54 W) have been achieved at 37 GHz. The size of the amplifier is 1.73.20.03t mm.
Makoto MATSUNAGA Yoshitada IYAMA Kazuhiko NAKAHARA Fumio TAKEDA
This letter describes a high power monolithic GaAs FET transmit-receive switch (TR switch) with two FETs. Both FETs operate in the same states, low impedance state in transmitting and high in receiving, so rf voltage imposed on FET is low both in transmitting and receiving. The developed TR switch can handle more than 12 W peak power at X-band frequencies.