This letter describes a high power monolithic GaAs FET transmit-receive switch (TR switch) with two FETs. Both FETs operate in the same states, low impedance state in transmitting and high in receiving, so rf voltage imposed on FET is low both in transmitting and receiving. The developed TR switch can handle more than 12 W peak power at X-band frequencies.

An inverse scattering problem of estimating the reflection coefficient and the surface impedance from two sets of absolute values of the near field with periodic change is investigated. The problem is formulated in terms of a nonlinear simultaneous equations which is derived from the relation between the two sets of absolute values and the field defined by a finite summation of the modal functions by applying the Fourier analysis. The reflection coefficient is estimated by solving the equations by Newton's method through the successive algorithm with the increment of the number of truncation in the summation one after another. Numerical examples are given and the accuracy of the estimation is discussed.

Even though BiCMOS process has an ability to make both BJT and MOSFET on single-chip, only BJT has been used for BiCMOS Si-MMIC LNA because of its low noise and high gain performance under low d. c. supply power. But the distortion performance of BJT should be improved for the receiver applications in some wireless systems. In this paper, intermodulation distortion characteristics comparison is carried out between BJT and MOSFET fabricated in the same BiCMOS process by the analysis based on the simplified transistor models with extracted device parameters. The analytical result shows that MOSFET has lower intermodulation distortion characteristics compared with BJT, and the result is evaluated by the measurements. In order to obtain both low distortion and low noise characteristics, a two-stage Si-MMIC LNA is developed by using BJT as the 1st stage and MOSFET as the 2nd stage of LNA. The fabricated LNA performs NF of 2.45 dB, gain of 19.3 dB, IIP3 of14.6 dBm and OIP3 of 4.7 dBm under 3 V/7.2 mA d. c. supply power.

For on-chip matching Si-MMIC fabricated on a conventional low resistivity Si substrate, the loss of on-chip inductors is quite high due to the dielectric loss of the substrate. In order to reduce the loss of on-chip matching circuit, the use of high resistivity Si substrate is quite effective. By using electro-magnetic simulation, the relationship between coplanar waveguide (CPW) transmission line characteristics and the resistivity of Si substrate is discussed. Based on the simulated results, the resistivity of Si substrate is designed to achieve lower dielectric loss than conductor loss. The effectiveness of high resistivity Si substrate is evaluated by the extraction of equivalent circuit model parameters of the fabricated on-chip spiral inductors and the measurement of the fabricated on-chip matching Si-MMIC LNA's.

A C-Ku band 5-bit MMIC phase shifter using optimized reflective series/parallel LC circuits is presented. The proposed circuit has frequency independent characteristics in the case of 180 phase shift, ideally. Also, an ultra-broad-band circuit design theory for the 180 optimized reflective circuit has derived, which gives optimum characteristics compromising between loss and phase shift error. The fabricated 5-bit MMIC phase shifter with SPDT switch has successfully demonstrated a typical insertion loss of 9.4 dB 1.4 dB, and a maximum RMS phase shift error of 7 over the 6 to 18 GHz band. The measured results validate the proposed design theory of the phase shifter.

A simplified equivalent circuit, which is useful in L-band, of switching MOSFET is presented. The MOSFET model accounts for the relatively low resistivity of Si substrate. By using this circuits, the relationship between the MOSFET equivalent circuit parameters and a series-shunt FET connected SPDT switch characteristics has been revealed. In order to evaluate the relationship mentioned above, enhancement type NMOSFETs and a SPDT switch with the FETs are fabricated. The MOSFET equivalent circuit parameters at L-band were extracted from measured small-signal S-parameters of the FETs. The measured switch characteristics are fairly good agreement with the simulated results which has been accomplished by using the MOSFET model. This good agreements shows the effectiveness of the MOSFET model which is presented here.

A large-signal simulation program for multi-stage power amplifier modules by using a novel interpolation is presented. This simulation program has the function to make the Load-Pull and Source-Pull (LP/SP) data required for the simulation. By using the interpolation, a lot of LP/SP data can be made from a small number of measured LP/SP data. The interpolation is based on the calculation method using a two-dimensional function. By using the simulation program, we can calculate the large-signal characteristics depended on frequency and temperature of the multi-stage amplifier module. We apply the simulation program to the design of the amplifier. The calculated and measured results agree well. The accuracy of the presented interpolation is confirmed. It is considered that the presented program is useful to calculate large-signal characteristics of the amplifier module.

The cause-and-effect relation between plasmon-resonance absorption and surface wave in a sinusoidal metal grating is investigated. By introducing an equivalent impedance model, similar to an equivalent circuit on an electric circuit, which is an impedance boundary value problem on the fictitious surface over the grating, we estimate the surface wave from the eigen field of the model by using the resonance property of the scattered field. Through numerical examples, we illustrate that the absorption in the grating occurs in the condition of exciting the surface wave along the model, and the real part of the surface impedance is negative on about half part of the fictitious surface in the condition.

A compact Ku-band 5-bit monolithic microwave integrated circuit (MMIC) phase shifter has been demonstrated. The total gate width of switching FETs and the total inductance of spiral inductors are proposed as the figures of merit for compactness. The phase shifter uses the T-type and PI-type high-pass filter (HPF)/band-pass filter (BPF) circuits in which FET "off"-state capacitances are incorporated as the filter elements. According to the figures of merit, the T-type is selected for 90-degree phase shift circuit and the PI-type is selected for the 45-degree phase shift circuit. The fabricated 5-bit phase shifter performs average insertion loss of 5.6 dB and RMS phase shift error of 3.77 degrees with die size of 1.65 mm 0.76 mm (1.25 mm2) in Ku-band.