A 0.4 µm stacked gate cell for a 64 Mbit flash memory has been developed which has the Symmetrical Side Wall Diffusion Self Aligned (SSW-DSA) structure. Using the proposed SSW-DSA cell with p+ pockets at both the drain and the source, and adequate punchthrough resistance to scale the gate length down to sub-half-micron has been obtained. It is also demonstrated that the channel erasing scheme applying negative bias to the gate, which is adopted for the SSW-DSA cell, shows lower trapped charges after Write/Erase (W/E) cycles evaluated by a charge pumping technique, and results in better endurance an retention characteristics than conventional erasing schemes.

An 85 ns 16 Mb CMOS EPROM has been realized. It can be hard-ware configured as either 1 M 16 bits or 2 M 8 bits by controlling an input signal. An unique redundancy circuit, which includes two types of PROM cell fuses, allow testing the device completely before assembly. Bit-line division and tungsten polycide wordline are keys to achieve an 85 ns access time. A scaled EPROM cell of 3.6µm is realized with a 0.6 µm N-well CMOS technology with trench-self-aligned isolation and oxide-nitride-oxide interpoly dielectrics. The chip size is 7.1 17.1 mm.

A contact-less cell with high capacitive-coupling ratio (HiCR) of 0.8, which is programmed and erased by Fowler-Nordheim (F-N) tunneling, has been developed for single 3 V power-supply 64 Mbit and future flash memories. A 1.50 µm2 cell area is obtained by using 0.4 µm technology. The HiCR cell structure is realized by 1) self-aligned definition of small tunneling regions underneath the floating-gate side wall and 2) an advanced rapid thermal process for 7.5 nm-thick tunnel-oxynitride. The internal-voltages used for PROGRAM and ERASE are8 V and 12 V, respectively. The use of low positive internal-voltages results in reducing total process step numbers compared with reported memory cells. The HiCR cell also realizes low power and fast random access with a single 3 V power-supply.

A 3.3 V single power-supply 64 Mb flash memory with a DBL programming scheme has been developed and fabricated with 0.4 µm CMOS technology. 50 ns access time and 256 b erase/programming unit-capacity have been achieved by using hierarchical word- and bit-line structures and DBL programming scheme. Furthermore in order to lower operating voltage the HiCR cell is used. The chip size is 19.3 mm13.3 mm.