Mixed-signal integrated circuit design and simulation highly rely on behavioral models of circuit blocks. Such models are used for the validation of design specification, optimization of system topology, and behavioral synthesis using a description language, etc. However, automatic behavioral model generation is still in its early stages; in most scenarios designers are responsible for creating behavioral models manually, which is time-consuming and error prone. In this paper an automatic behavioral model generation method for switched-capacitor (SC) integrator is proposed. This technique is based on symbolic circuit modeling with approximation, by which parametric behavioral integrator model can be generated. Such parametric models can be used in circuit design subject to severe process variational. It is demonstrated that the automatically generated integrator models can accurately capture process variation effects on arbitrarily selected circuit elements; furthermore, they can be applied to behavioral simulation of SC Sigma-Delta modulators (SDMs) with acceptable accuracy and speedup. The generated models are compared to a recently proposed manually generated behavioral integrator model in several simulation settings.

A 900 mV single-stage class-AB amplifier suitable for the Switched-Opamp technique is presented. To improve the slew-limited characteristics, a Dynamic Current Source (DCS) circuit which boosts the tail currents of the amplifier is proposed. The tail current of the proposed circuit is well defined and independent of technology parameters and supply variations. The tail current of the amplifier is 40 µA with zero differential voltages, while the maximum output current is nearly 900 µA. A single-loop 3rd order Σ-Δ modulator with the proposed amplifier was designed. For a 260 mV 15.625 kHz sinusoidal input signal, the simulated dynamic range of the modulator is 89 dB.

We have designed a superconductor-semiconductor hybrid analog-to-digital (A/D) converter and experimentally evaluated its performance at sampling frequencies up to 18.6 GHz. The A/D converter consists of a superconductor front-end circuit and a semiconductor back-end circuit. The front-end circuit includes a sigma-delta modulator and an interface circuit, which is for transmitting data signal to the semiconductor back-end circuit. The semiconductor back-end circuit performs decimation filtering. The design of the modulator was modified to reduce effects of integrator leak and thermal noise on signal-to-noise ratio (SNR). Using the improved modulator design, we achieved a bit-accuracy close to the ideal value. The hybrid architecture enabled us to reduce the integration scale of the front-end circuit to fewer than 500 junctions. This simplicity makes feasible a circuit based on a high TC superconductor as well as on a low TC superconductor. The experimental results show that the hybrid A/D converter operated perfectly and that SNR was 84.8 dB (bit accuracy~13.8 bit) at a band width of 9.1 MHz. This converter has the highest performance of all sigma-delta A/D converters.

In this paper, an ultra-low power variable-resolution sigma-delta (ΣΔ) modulator for biomedical application is presented. The resolution of proposed modulator can be adjusted by switching its sampling frequency and architecture. The architecture is switched between second-order single-loop modulator and fourth-order cascaded second stage noise shaped modulator to reach different resolution requirement. The proposed sigma-delta modulator is implemented by single phase integrators based on a fully differential switched-capacitor circuit. The digital cancellation logic is embedded in the chip so that it would easily be integrated with biomedical instrument for effective acquisition. Experimental results of the proposed variable-resolution ΣΔ modulator fabricated in standard CMOS 0.18 µm technology confirm the expected specifications from 65 dB signal-to-noise distortion to 96 dB with 1 kHz bandwidth and power consumption range from 48 µW to 360 µW with a 1.8 V battery supply.

A 1-V operational sigma-delta modulator with a second-order passive switched capacitor filter is designed and fabricated by using a 90 nm CMOS process. No gate-voltage bootstrapped scheme is adopted to drive analog switches, and the voltage gain of a comparator is chosen to be 94 dB. The experimental results show that the peak SNR reached 68.9 dB with a frequency bandwidth of 40 kHz when the clock was 40 MHz.

This paper proposes a jitter tolerant continuous-time sigma-delta A-D converter structure as well as its design method. This method transforms a conventionally designed sigma-delta A-D converter into a jitter tolerant one. Jitter tolerance is provided by the modified feedback signal paths and a consequently inserted digital LPF. This method is applicable independently of a system order and the other specifications.

In this paper, a low-voltage low-power sigma-delta modulator dedicated to implantable sensing devices is presented. This second-order single-loop sigma-delta modulator is implemented with half-delay integrators. These integrators are based on new fully-differential CMOS class AB switched-Operational Transconductance Amplifier (switched-OTA). An on-chip voltage doubler is introduced to locally boost a supply voltage at the input stage of a conventional OTA in order to allow rail-to-rail signal swing. Experimental results of the modulator fabricated in CMOS 0.18 µm technology confirm its expected features of a peak signal-to-noise ratio (SNR) of 72 dB, a signal-to-noise distortion ratio (SNDR) of 62 dB in a 5 kHz signal bandwidth, and a power consumption lower than 66 µW with a 900 mV voltage supply.

This work presents a new sigma-delta modulator (SDM) architecture for a wide bandwidth receiver. This architecture contains dual-bandwidth for W-CDMA and GSM system applications. Low-distortion swing-suppressing SDM and interpolative SDM cascaded units are used together. Using the low-distortion swing-suppressing technique, the resolution can be improved even under non-linearity effects. The interpolative SDM extends the signal bandwidth and represses the high-band noise. The SDM used in the W-CDMA and GSM applications was designed and simulated using 0.25-µm 1P5M CMOS technology. The simulated peak SNDR of W-CDMA and GSM are 72/70 dB and 82/84 dB in Low-IF/Zero-IF standards.

This letter presents a simple A/D converter based on the circle map. The converter encodes a dc input into a binary output sequence and has the trapping window that extracts an available part of the output sequence. Using the available part, the decoder provides an estimation by a fraction with variable denominator: it can realize higher resolution. Theoretical evidences for the estimation characteristics are given.

The capability of a high-temperature superconducting sigma-delta modulator was studied by means of circuit simulation and FFT analysis. Parameters for the circuit simulation were extracted from experimental measurements. The present circuit simulation includes thermal-noise effect. Successive FFT analyses were made to evaluate the dynamic range of the sigma-delta modulator. As a result, the dynamic range was evaluated as 60.1 dB at temperature of 20 K and 56.9 dB at temperature of 77 K.

In this paper, we describe our SFQ circuit design and measurement carried out in SRL-ISTEC. We are studying an oversampling sigma-delta modulator and a counter-type decimation filter with multistage structure for developing AD converters for software-defined radio application. We are also developing a superconducting memory, whose peripheral circuits are constructed with SFQ circuits.

A second-order sigma-delta modulator with a 3-bit internal quantizer featuring a gain scaling of an internal ADC and a very simple internal DAC has been designed and implemented in a 0.8 µm double-poly double-metal CMOS process. We improved the performance of the modulator with the gain scaling of a 3-bit internal ADC and design of the internal error-free DAC with using simple logic gates. The specification of each component is determined for the modulator to have 14-bit resolution by time based modeling and the designed components satisfy the required specifications. The peak SNR of 87 dB and dynamic range of 87 dB were achieved at a clock rate of 2.816 MHz for 22 kHz baseband. The measured results show that the fabricated modulator lower SNR by 14 dB than that of the simulation due to the non-ideal input source and the disregarded error factors in the modeling such as the voltage variable capacitors etc.