High Power GaN-FET Amplifier with Reduced Memory Effects for W-CDMA Base Stations

Akio WAKEJIMA; Kohji MATSUNAGA; Yuji ANDO; Tatsuo NAKAYAMA; Yasuhiro OKAMOTO; Kazuki OTA; Naotaka KURODA; Masahiro TANOMURA; Hironobu MIYAMOTO

doi:10.1093/ietele/e90-c.5.929

High Power GaN-FET Amplifier with Reduced Memory Effects for W-CDMA Base Stations

Akio WAKEJIMA, Kohji MATSUNAGA, Yuji ANDO, Tatsuo NAKAYAMA, Yasuhiro OKAMOTO, Kazuki OTA, Naotaka KURODA, Masahiro TANOMURA, Hironobu MIYAMOTO

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This paper describes a high power GaN-FET amplifier which is developed for wideband code division multiple access (W-CDMA) base stations. We design a bias network which is symmetrically arranged to the RF line (two way bias network) in order to reduce impedance at a baseband frequency of the multi-carrier W-CDMA signal. As a result, the amplifier with the two way bias network successfully suppressed memory effects. Therefore, the application of a DPD technique to the GaN-FET amplifier with the two way bias network demonstrates almost 20 dB linearity improvement in IM₃ and considerable improvement in higher order IMD, resulting in low IMD of less than -50 dBc at the highest ever reported W-CDMA average output power of 76 W.

Publication: IEICE TRANSACTIONS on Electronics Vol.E90-C No.5 pp.929-936

Publication Date: 2007/05/01

Publicized

Online ISSN: 1745-1353

DOI: 10.1093/ietele/e90-c.5.929

Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)

Category: Compound Semiconductor and Power Devices

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Akio WAKEJIMA, Kohji MATSUNAGA, Yuji ANDO, Tatsuo NAKAYAMA, Yasuhiro OKAMOTO, Kazuki OTA, Naotaka KURODA, Masahiro TANOMURA, Hironobu MIYAMOTO, "High Power GaN-FET Amplifier with Reduced Memory Effects for W-CDMA Base Stations" in IEICE TRANSACTIONS on Electronics, vol. E90-C, no. 5, pp. 929-936, May 2007, doi: 10.1093/ietele/e90-c.5.929.
Abstract: This paper describes a high power GaN-FET amplifier which is developed for wideband code division multiple access (W-CDMA) base stations. We design a bias network which is symmetrically arranged to the RF line (two way bias network) in order to reduce impedance at a baseband frequency of the multi-carrier W-CDMA signal. As a result, the amplifier with the two way bias network successfully suppressed memory effects. Therefore, the application of a DPD technique to the GaN-FET amplifier with the two way bias network demonstrates almost 20 dB linearity improvement in IM₃ and considerable improvement in higher order IMD, resulting in low IMD of less than -50 dBc at the highest ever reported W-CDMA average output power of 76 W.
URL: https://globals.ieice.org/en_transactions/electronics/10.1093/ietele/e90-c.5.929/_p

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@ARTICLE{e90-c_5_929,
author={Akio WAKEJIMA, Kohji MATSUNAGA, Yuji ANDO, Tatsuo NAKAYAMA, Yasuhiro OKAMOTO, Kazuki OTA, Naotaka KURODA, Masahiro TANOMURA, Hironobu MIYAMOTO, },
journal={IEICE TRANSACTIONS on Electronics},
title={High Power GaN-FET Amplifier with Reduced Memory Effects for W-CDMA Base Stations},
year={2007},
volume={E90-C},
number={5},
pages={929-936},
abstract={This paper describes a high power GaN-FET amplifier which is developed for wideband code division multiple access (W-CDMA) base stations. We design a bias network which is symmetrically arranged to the RF line (two way bias network) in order to reduce impedance at a baseband frequency of the multi-carrier W-CDMA signal. As a result, the amplifier with the two way bias network successfully suppressed memory effects. Therefore, the application of a DPD technique to the GaN-FET amplifier with the two way bias network demonstrates almost 20 dB linearity improvement in IM₃ and considerable improvement in higher order IMD, resulting in low IMD of less than -50 dBc at the highest ever reported W-CDMA average output power of 76 W.},
keywords={},
doi={10.1093/ietele/e90-c.5.929},
ISSN={1745-1353},
month={May},}

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TY - JOUR
TI - High Power GaN-FET Amplifier with Reduced Memory Effects for W-CDMA Base Stations
T2 - IEICE TRANSACTIONS on Electronics
SP - 929
EP - 936
AU - Akio WAKEJIMA
AU - Kohji MATSUNAGA
AU - Yuji ANDO
AU - Tatsuo NAKAYAMA
AU - Yasuhiro OKAMOTO
AU - Kazuki OTA
AU - Naotaka KURODA
AU - Masahiro TANOMURA
AU - Hironobu MIYAMOTO
PY - 2007
DO - 10.1093/ietele/e90-c.5.929
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E90-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2007
AB - This paper describes a high power GaN-FET amplifier which is developed for wideband code division multiple access (W-CDMA) base stations. We design a bias network which is symmetrically arranged to the RF line (two way bias network) in order to reduce impedance at a baseband frequency of the multi-carrier W-CDMA signal. As a result, the amplifier with the two way bias network successfully suppressed memory effects. Therefore, the application of a DPD technique to the GaN-FET amplifier with the two way bias network demonstrates almost 20 dB linearity improvement in IM₃ and considerable improvement in higher order IMD, resulting in low IMD of less than -50 dBc at the highest ever reported W-CDMA average output power of 76 W.
ER -