Power Heterojunction FETs for Low-Voltage Digital Cellular Applications

Keiko INOSAKO; Naotaka IWATA; Masaaki KUZUHARA

Power Heterojunction FETs for Low-Voltage Digital Cellular Applications

Keiko INOSAKO, Naotaka IWATA, Masaaki KUZUHARA

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This paper describes 950 GHz power performance of double-doped AlGaAs/InGaAs/AlGaAs heterojunction field-effect transistors (HJFET) operated at a drain bias voltage ranging from 2.5 to 3.5 V. The developed 1.0 µm gatelength HJFET exhibited a maximum drain current (I_max) of 500 mA/mm, a transconductance (g_m) of 300 mS/mm, and a gate-to-drain breakdown voltage of 11 V. Operated at 3.0 V, a 17.5 mm gate periphery HJFET showed 1.4 W P_out and -50.3 dBc adjacent channel leakage power at a 50 kHz off-carrier frequency from 950 MHz with 50% PAE. Harmonic balance simulations revealed that the flat g_m characteristics of the HJFET with respect to gate bias voltage are effective to suppress intermodulation distortion under large signal operation. The developed HJFET has great potential for small-sized digital cellular power applications operated at a low DC supply voltage.

Publication: IEICE TRANSACTIONS on Electronics Vol.E78-C No.9 pp.1241-1245

Publication Date: 1995/09/25

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Type of Manuscript: Special Section PAPER (Special Issue on Ultra-High-Speed Electron Devices)

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Keiko INOSAKO, Naotaka IWATA, Masaaki KUZUHARA, "Power Heterojunction FETs for Low-Voltage Digital Cellular Applications" in IEICE TRANSACTIONS on Electronics, vol. E78-C, no. 9, pp. 1241-1245, September 1995, doi: .
Abstract: This paper describes 950 GHz power performance of double-doped AlGaAs/InGaAs/AlGaAs heterojunction field-effect transistors (HJFET) operated at a drain bias voltage ranging from 2.5 to 3.5 V. The developed 1.0 µm gatelength HJFET exhibited a maximum drain current (I_max) of 500 mA/mm, a transconductance (g_m) of 300 mS/mm, and a gate-to-drain breakdown voltage of 11 V. Operated at 3.0 V, a 17.5 mm gate periphery HJFET showed 1.4 W P_out and -50.3 dBc adjacent channel leakage power at a 50 kHz off-carrier frequency from 950 MHz with 50% PAE. Harmonic balance simulations revealed that the flat g_m characteristics of the HJFET with respect to gate bias voltage are effective to suppress intermodulation distortion under large signal operation. The developed HJFET has great potential for small-sized digital cellular power applications operated at a low DC supply voltage.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/e78-c_9_1241/_p

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@ARTICLE{e78-c_9_1241,
author={Keiko INOSAKO, Naotaka IWATA, Masaaki KUZUHARA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Power Heterojunction FETs for Low-Voltage Digital Cellular Applications},
year={1995},
volume={E78-C},
number={9},
pages={1241-1245},
abstract={This paper describes 950 GHz power performance of double-doped AlGaAs/InGaAs/AlGaAs heterojunction field-effect transistors (HJFET) operated at a drain bias voltage ranging from 2.5 to 3.5 V. The developed 1.0 µm gatelength HJFET exhibited a maximum drain current (I_max) of 500 mA/mm, a transconductance (g_m) of 300 mS/mm, and a gate-to-drain breakdown voltage of 11 V. Operated at 3.0 V, a 17.5 mm gate periphery HJFET showed 1.4 W P_out and -50.3 dBc adjacent channel leakage power at a 50 kHz off-carrier frequency from 950 MHz with 50% PAE. Harmonic balance simulations revealed that the flat g_m characteristics of the HJFET with respect to gate bias voltage are effective to suppress intermodulation distortion under large signal operation. The developed HJFET has great potential for small-sized digital cellular power applications operated at a low DC supply voltage.},
keywords={},
doi={},
ISSN={},
month={September},}

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TY - JOUR
TI - Power Heterojunction FETs for Low-Voltage Digital Cellular Applications
T2 - IEICE TRANSACTIONS on Electronics
SP - 1241
EP - 1245
AU - Keiko INOSAKO
AU - Naotaka IWATA
AU - Masaaki KUZUHARA
PY - 1995
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E78-C
IS - 9
JA - IEICE TRANSACTIONS on Electronics
Y1 - September 1995
AB - This paper describes 950 GHz power performance of double-doped AlGaAs/InGaAs/AlGaAs heterojunction field-effect transistors (HJFET) operated at a drain bias voltage ranging from 2.5 to 3.5 V. The developed 1.0 µm gatelength HJFET exhibited a maximum drain current (I_max) of 500 mA/mm, a transconductance (g_m) of 300 mS/mm, and a gate-to-drain breakdown voltage of 11 V. Operated at 3.0 V, a 17.5 mm gate periphery HJFET showed 1.4 W P_out and -50.3 dBc adjacent channel leakage power at a 50 kHz off-carrier frequency from 950 MHz with 50% PAE. Harmonic balance simulations revealed that the flat g_m characteristics of the HJFET with respect to gate bias voltage are effective to suppress intermodulation distortion under large signal operation. The developed HJFET has great potential for small-sized digital cellular power applications operated at a low DC supply voltage.
ER -