Test Structure and Experimental Analysis of Emitter-Base Reverse Voltage Stress Degradation in Self-Aligned Bipolar Transistors

Hiromi SHIMAMOTO; Masamichi TANABE; Takahiro ONAI; Katsuyoshi WASHIO; Tohru NAKAMURA

Test Structure and Experimental Analysis of Emitter-Base Reverse Voltage Stress Degradation in Self-Aligned Bipolar Transistors

Hiromi SHIMAMOTO, Masamichi TANABE, Takahiro ONAI, Katsuyoshi WASHIO, Tohru NAKAMURA

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The degradation of I-V characteristics under constant emitter-base reverse voltage stress in advanced self-aligned bipolar transistors was analyzed. Experimental analyses have been taken the stress field effect into account when predicting hot-carrier degradation. These analyses showed that base current starts to increase when the reverse voltage stress is about 3 V. The dependence of the base current change on reverse voltages of more than 3 V was also investigated experimentally, and equations expressing hot-carrier degradation in terms of the exponential dependence of excess base current on both reverse stress voltage and stress-enhancing voltage related to emitter-base breakdown voltage were derived.

Publication: IEICE TRANSACTIONS on Electronics Vol.E79-C No.2 pp.211-218

Publication Date: 1996/02/25

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Type of Manuscript: Special Section PAPER (Special Issue on Microelectronic Test Structures)

Category: Reliability Analysis

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Hiromi SHIMAMOTO, Masamichi TANABE, Takahiro ONAI, Katsuyoshi WASHIO, Tohru NAKAMURA, "Test Structure and Experimental Analysis of Emitter-Base Reverse Voltage Stress Degradation in Self-Aligned Bipolar Transistors" in IEICE TRANSACTIONS on Electronics, vol. E79-C, no. 2, pp. 211-218, February 1996, doi: .
Abstract: The degradation of I-V characteristics under constant emitter-base reverse voltage stress in advanced self-aligned bipolar transistors was analyzed. Experimental analyses have been taken the stress field effect into account when predicting hot-carrier degradation. These analyses showed that base current starts to increase when the reverse voltage stress is about 3 V. The dependence of the base current change on reverse voltages of more than 3 V was also investigated experimentally, and equations expressing hot-carrier degradation in terms of the exponential dependence of excess base current on both reverse stress voltage and stress-enhancing voltage related to emitter-base breakdown voltage were derived.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/e79-c_2_211/_p

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@ARTICLE{e79-c_2_211,
author={Hiromi SHIMAMOTO, Masamichi TANABE, Takahiro ONAI, Katsuyoshi WASHIO, Tohru NAKAMURA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Test Structure and Experimental Analysis of Emitter-Base Reverse Voltage Stress Degradation in Self-Aligned Bipolar Transistors},
year={1996},
volume={E79-C},
number={2},
pages={211-218},
abstract={The degradation of I-V characteristics under constant emitter-base reverse voltage stress in advanced self-aligned bipolar transistors was analyzed. Experimental analyses have been taken the stress field effect into account when predicting hot-carrier degradation. These analyses showed that base current starts to increase when the reverse voltage stress is about 3 V. The dependence of the base current change on reverse voltages of more than 3 V was also investigated experimentally, and equations expressing hot-carrier degradation in terms of the exponential dependence of excess base current on both reverse stress voltage and stress-enhancing voltage related to emitter-base breakdown voltage were derived.},
keywords={},
doi={},
ISSN={},
month={February},}

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TY - JOUR
TI - Test Structure and Experimental Analysis of Emitter-Base Reverse Voltage Stress Degradation in Self-Aligned Bipolar Transistors
T2 - IEICE TRANSACTIONS on Electronics
SP - 211
EP - 218
AU - Hiromi SHIMAMOTO
AU - Masamichi TANABE
AU - Takahiro ONAI
AU - Katsuyoshi WASHIO
AU - Tohru NAKAMURA
PY - 1996
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E79-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 1996
AB - The degradation of I-V characteristics under constant emitter-base reverse voltage stress in advanced self-aligned bipolar transistors was analyzed. Experimental analyses have been taken the stress field effect into account when predicting hot-carrier degradation. These analyses showed that base current starts to increase when the reverse voltage stress is about 3 V. The dependence of the base current change on reverse voltages of more than 3 V was also investigated experimentally, and equations expressing hot-carrier degradation in terms of the exponential dependence of excess base current on both reverse stress voltage and stress-enhancing voltage related to emitter-base breakdown voltage were derived.
ER -