Integrated Tunable DBR Laser with EA-Modulator Grown by Selective Area MOVPE

Yukio KATOH; Koji YAMADA; Tatsuo KUNII; Yoh OGAWA

Integrated Tunable DBR Laser with EA-Modulator Grown by Selective Area MOVPE

Yukio KATOH, Koji YAMADA, Tatsuo KUNII, Yoh OGAWA

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A wavelength tunable DBR laser monolithically integrated with an EA-modulator as a WDM system light source was fabricated by selective area MOVPE growth. The lasing wavelength and band-gap energy were simultaneously controlled on the same epitaxial wafer by using a modulated grown thickness of InGaAsP/InGaAsP MQW layers. A wavelength tuning range of 3.5 nm, an output power of 3 mW, and an extinction ratio of 14 dB for 3 V were achieved. The measured 3 dB frequency bandwidth was 2 GHz. No significant change in modulation characteristics were observed when wavelength tuning by injecting the current into the DBR.

Publication: IEICE TRANSACTIONS on Electronics Vol.E80-C No.1 pp.69-73

Publication Date: 1997/01/25

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Type of Manuscript: Special Section PAPER (Special Issue on Devices, Packaging Technology, and Subsystems for the Optical Access Network)

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Yukio KATOH, Koji YAMADA, Tatsuo KUNII, Yoh OGAWA, "Integrated Tunable DBR Laser with EA-Modulator Grown by Selective Area MOVPE" in IEICE TRANSACTIONS on Electronics, vol. E80-C, no. 1, pp. 69-73, January 1997, doi: .
Abstract: A wavelength tunable DBR laser monolithically integrated with an EA-modulator as a WDM system light source was fabricated by selective area MOVPE growth. The lasing wavelength and band-gap energy were simultaneously controlled on the same epitaxial wafer by using a modulated grown thickness of InGaAsP/InGaAsP MQW layers. A wavelength tuning range of 3.5 nm, an output power of 3 mW, and an extinction ratio of 14 dB for 3 V were achieved. The measured 3 dB frequency bandwidth was 2 GHz. No significant change in modulation characteristics were observed when wavelength tuning by injecting the current into the DBR.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/e80-c_1_69/_p

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@ARTICLE{e80-c_1_69,
author={Yukio KATOH, Koji YAMADA, Tatsuo KUNII, Yoh OGAWA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Integrated Tunable DBR Laser with EA-Modulator Grown by Selective Area MOVPE},
year={1997},
volume={E80-C},
number={1},
pages={69-73},
abstract={A wavelength tunable DBR laser monolithically integrated with an EA-modulator as a WDM system light source was fabricated by selective area MOVPE growth. The lasing wavelength and band-gap energy were simultaneously controlled on the same epitaxial wafer by using a modulated grown thickness of InGaAsP/InGaAsP MQW layers. A wavelength tuning range of 3.5 nm, an output power of 3 mW, and an extinction ratio of 14 dB for 3 V were achieved. The measured 3 dB frequency bandwidth was 2 GHz. No significant change in modulation characteristics were observed when wavelength tuning by injecting the current into the DBR.},
keywords={},
doi={},
ISSN={},
month={January},}

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TY - JOUR
TI - Integrated Tunable DBR Laser with EA-Modulator Grown by Selective Area MOVPE
T2 - IEICE TRANSACTIONS on Electronics
SP - 69
EP - 73
AU - Yukio KATOH
AU - Koji YAMADA
AU - Tatsuo KUNII
AU - Yoh OGAWA
PY - 1997
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E80-C
IS - 1
JA - IEICE TRANSACTIONS on Electronics
Y1 - January 1997
AB - A wavelength tunable DBR laser monolithically integrated with an EA-modulator as a WDM system light source was fabricated by selective area MOVPE growth. The lasing wavelength and band-gap energy were simultaneously controlled on the same epitaxial wafer by using a modulated grown thickness of InGaAsP/InGaAsP MQW layers. A wavelength tuning range of 3.5 nm, an output power of 3 mW, and an extinction ratio of 14 dB for 3 V were achieved. The measured 3 dB frequency bandwidth was 2 GHz. No significant change in modulation characteristics were observed when wavelength tuning by injecting the current into the DBR.
ER -