On Density-Gradient Modeling of Tunneling through Insulators

Timm HOHR; Andreas SCHENK; Andreas WETTSTEIN; Wolfgang FICHTNER

On Density-Gradient Modeling of Tunneling through Insulators

Timm HOHR, Andreas SCHENK, Andreas WETTSTEIN, Wolfgang FICHTNER

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The density gradient (DG) model is tested for its ability to describe tunneling currents through thin insulating barriers. Simulations of single barriers (MOS diodes, MOSFETs) and double barriers (RTDs) show the limitations of the DG model. For comparison, direct tunneling currents are calculated with the Schrodinger-Bardeen method and used as benchmark. The negative differential resistance (NDR) observed in simulating tunneling currents with the DG model turns out to be an artifact related to large density differences in the semiconductor regions. Such spurious NDR occurs both for single and double barriers and vanishes, if all semiconductor regions are equally doped.

Publication: IEICE TRANSACTIONS on Electronics Vol.E86-C No.3 pp.379-384

Publication Date: 2003/03/01

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Type of Manuscript: Special Section PAPER (Special Issue on the 2002 IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'02))

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Timm HOHR, Andreas SCHENK, Andreas WETTSTEIN, Wolfgang FICHTNER, "On Density-Gradient Modeling of Tunneling through Insulators" in IEICE TRANSACTIONS on Electronics, vol. E86-C, no. 3, pp. 379-384, March 2003, doi: .
Abstract: The density gradient (DG) model is tested for its ability to describe tunneling currents through thin insulating barriers. Simulations of single barriers (MOS diodes, MOSFETs) and double barriers (RTDs) show the limitations of the DG model. For comparison, direct tunneling currents are calculated with the Schrodinger-Bardeen method and used as benchmark. The negative differential resistance (NDR) observed in simulating tunneling currents with the DG model turns out to be an artifact related to large density differences in the semiconductor regions. Such spurious NDR occurs both for single and double barriers and vanishes, if all semiconductor regions are equally doped.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/e86-c_3_379/_p

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@ARTICLE{e86-c_3_379,
author={Timm HOHR, Andreas SCHENK, Andreas WETTSTEIN, Wolfgang FICHTNER, },
journal={IEICE TRANSACTIONS on Electronics},
title={On Density-Gradient Modeling of Tunneling through Insulators},
year={2003},
volume={E86-C},
number={3},
pages={379-384},
abstract={The density gradient (DG) model is tested for its ability to describe tunneling currents through thin insulating barriers. Simulations of single barriers (MOS diodes, MOSFETs) and double barriers (RTDs) show the limitations of the DG model. For comparison, direct tunneling currents are calculated with the Schrodinger-Bardeen method and used as benchmark. The negative differential resistance (NDR) observed in simulating tunneling currents with the DG model turns out to be an artifact related to large density differences in the semiconductor regions. Such spurious NDR occurs both for single and double barriers and vanishes, if all semiconductor regions are equally doped.},
keywords={},
doi={},
ISSN={},
month={March},}

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TY - JOUR
TI - On Density-Gradient Modeling of Tunneling through Insulators
T2 - IEICE TRANSACTIONS on Electronics
SP - 379
EP - 384
AU - Timm HOHR
AU - Andreas SCHENK
AU - Andreas WETTSTEIN
AU - Wolfgang FICHTNER
PY - 2003
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E86-C
IS - 3
JA - IEICE TRANSACTIONS on Electronics
Y1 - March 2003
AB - The density gradient (DG) model is tested for its ability to describe tunneling currents through thin insulating barriers. Simulations of single barriers (MOS diodes, MOSFETs) and double barriers (RTDs) show the limitations of the DG model. For comparison, direct tunneling currents are calculated with the Schrodinger-Bardeen method and used as benchmark. The negative differential resistance (NDR) observed in simulating tunneling currents with the DG model turns out to be an artifact related to large density differences in the semiconductor regions. Such spurious NDR occurs both for single and double barriers and vanishes, if all semiconductor regions are equally doped.
ER -