State-Dependence of On-Chip Power Distribution Network Capacitance

Koh YAMANAGA; Shiho HAGIWARA; Ryo TAKAHASHI; Kazuya MASU; Takashi SATO

doi:10.1587/transele.E97.C.77

State-Dependence of On-Chip Power Distribution Network Capacitance

Koh YAMANAGA, Shiho HAGIWARA, Ryo TAKAHASHI, Kazuya MASU, Takashi SATO

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In this paper, the measurement of capacitance variation, of an on-chip power distribution network (PDN) due to the change of internal states of a CMOS logic circuit, is studied. A state-dependent PDN-capacitance model that explains measurement results will be also proposed. The model is composed of capacitance elements related to MOS transistors, signal and power supply wires, and substrate. Reflecting the changes of electrode potentials, the capacitance elements become state-dependent. The capacitive elements are then all connected in parallel between power supply and ground to form the proposed model. By using the proposed model, state-dependence of PDN-capacitances for different logic circuits are studied in detail. The change of PDN-capacitance exceeds 12% of its total capacitance in some cases, which corresponds to 6% shift of anti-resonance frequency. Consideration of the state-dependence is important for modeling the PDN-capacitance.

Publication: IEICE TRANSACTIONS on Electronics Vol.E97-C No.1 pp.77-84

Publication Date: 2014/01/01

Publicized

Online ISSN: 1745-1353

DOI: 10.1587/transele.E97.C.77

Type of Manuscript: PAPER

Category: Integrated Electronics

Authors

Koh YAMANAGA
  Murata Manufacturing Co., Ltd.
Shiho HAGIWARA
  Fujitsu Laboratories Ltd.
Ryo TAKAHASHI
  The University of Tokyo
Kazuya MASU
  Tokyo Institute of Technology
Takashi SATO
  Kyoto University

Keyword

CMOS logic circuit, state-dependent capacitance model, capacitance measurement, PDN-capacitance, parasitic capacitance

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Koh YAMANAGA, Shiho HAGIWARA, Ryo TAKAHASHI, Kazuya MASU, Takashi SATO, "State-Dependence of On-Chip Power Distribution Network Capacitance" in IEICE TRANSACTIONS on Electronics, vol. E97-C, no. 1, pp. 77-84, January 2014, doi: 10.1587/transele.E97.C.77.
Abstract: In this paper, the measurement of capacitance variation, of an on-chip power distribution network (PDN) due to the change of internal states of a CMOS logic circuit, is studied. A state-dependent PDN-capacitance model that explains measurement results will be also proposed. The model is composed of capacitance elements related to MOS transistors, signal and power supply wires, and substrate. Reflecting the changes of electrode potentials, the capacitance elements become state-dependent. The capacitive elements are then all connected in parallel between power supply and ground to form the proposed model. By using the proposed model, state-dependence of PDN-capacitances for different logic circuits are studied in detail. The change of PDN-capacitance exceeds 12% of its total capacitance in some cases, which corresponds to 6% shift of anti-resonance frequency. Consideration of the state-dependence is important for modeling the PDN-capacitance.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/transele.E97.C.77/_p

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@ARTICLE{e97-c_1_77,
author={Koh YAMANAGA, Shiho HAGIWARA, Ryo TAKAHASHI, Kazuya MASU, Takashi SATO, },
journal={IEICE TRANSACTIONS on Electronics},
title={State-Dependence of On-Chip Power Distribution Network Capacitance},
year={2014},
volume={E97-C},
number={1},
pages={77-84},
abstract={In this paper, the measurement of capacitance variation, of an on-chip power distribution network (PDN) due to the change of internal states of a CMOS logic circuit, is studied. A state-dependent PDN-capacitance model that explains measurement results will be also proposed. The model is composed of capacitance elements related to MOS transistors, signal and power supply wires, and substrate. Reflecting the changes of electrode potentials, the capacitance elements become state-dependent. The capacitive elements are then all connected in parallel between power supply and ground to form the proposed model. By using the proposed model, state-dependence of PDN-capacitances for different logic circuits are studied in detail. The change of PDN-capacitance exceeds 12% of its total capacitance in some cases, which corresponds to 6% shift of anti-resonance frequency. Consideration of the state-dependence is important for modeling the PDN-capacitance.},
keywords={},
doi={10.1587/transele.E97.C.77},
ISSN={1745-1353},
month={January},}

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TY - JOUR
TI - State-Dependence of On-Chip Power Distribution Network Capacitance
T2 - IEICE TRANSACTIONS on Electronics
SP - 77
EP - 84
AU - Koh YAMANAGA
AU - Shiho HAGIWARA
AU - Ryo TAKAHASHI
AU - Kazuya MASU
AU - Takashi SATO
PY - 2014
DO - 10.1587/transele.E97.C.77
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E97-C
IS - 1
JA - IEICE TRANSACTIONS on Electronics
Y1 - January 2014
AB - In this paper, the measurement of capacitance variation, of an on-chip power distribution network (PDN) due to the change of internal states of a CMOS logic circuit, is studied. A state-dependent PDN-capacitance model that explains measurement results will be also proposed. The model is composed of capacitance elements related to MOS transistors, signal and power supply wires, and substrate. Reflecting the changes of electrode potentials, the capacitance elements become state-dependent. The capacitive elements are then all connected in parallel between power supply and ground to form the proposed model. By using the proposed model, state-dependence of PDN-capacitances for different logic circuits are studied in detail. The change of PDN-capacitance exceeds 12% of its total capacitance in some cases, which corresponds to 6% shift of anti-resonance frequency. Consideration of the state-dependence is important for modeling the PDN-capacitance.
ER -