A new shared multibuffer architecture for high-speed ATM (Asynchronous Transfer Mode) switch LSIs is described. Multiple buffer memories are located between two crosspoint switches. By controlling the input-side crosspoint switch so as to equalize the utilization rate of each buffer memory, these multiple buffer memories can be recognized as a single large shared buffer memory. High utilization efficiency of buffer memory can thus be achieved, and the cell loss ratio is minimized. By accessing the buffer memories in parallel via crosspoint switches, the time required to access the buffer memories is greatly reduced. This feature enables high-speed operation of the switch. The shared multibuffer architecture was implemented in a switch LSI using 0.8-µm BiCMOS process technology. Experimental results revealed that this chip can operate at more than 125 MHz. Bit-sliced eight switch LSIs operating at 78 MHz construct a 622-Mb/s 88 ATM switching system with a buffer size of 1,024 ATM cells. Power consumption of the switch LSI was 3 W.

We propose a novel capacitorless twin-transistor random access memory (TTRAM). The 2 Mb test device has been fabricated on 130 nm SOI-CMOS process. We demonstrate the TTRAM cell has two data-storage states and confirm the data retention time of 100 ms at 80. TTRAM process is compatible with the conventional SOI-CMOS and never requires any additional processes. A 6.1 ns row-access time is achieved and 250 MHz operation can be realized by using 2 bank 8 b-burst mode.

Adaptive voltage management (AVM) scheme is proposed for worst-caseless lower voltage SoC design. The AVM scheme detects the temperature accurately by using two oscillators with different temperature characteristics, and sets supply voltage most suitable with a table look-up method corresponding to the process variation. Also, the AVM can supply the stable voltage with a local shift type regulator even at lower voltage. Thereby, this supply-voltage control system considering PVT variations can control the internal voltage corresponding to process and temperature variations and can realize a wide-operating-margin, DFM function for low voltage SoC. The experimental chip is fabricated on a 90 nm CMOS process, and it was confirmed that the proposed architecture controls the voltage accurately and has a wide operating margin at a lower voltage.

A 23.3 mm2 32 Mb embedded DRAM (eDRAM) macro has been fabricated using 0.18 µm triple-well 4-metal embedded DRAM process technology to realize an accelerated 3-D graphics controller. The array architecture, using a dual-port sense amplifier, achieves the column access latency of two cycles at 222 MHz and a peak data rate of 14.2 4 GB/s at 4 macros. The process cost has been kept low by using VT-MOS circuit technology and taking advantage of a characteristic of dual-gate oxide process technology. A tRAC of 11.6 ns at 2.0 V is achieved using a 'pre-detect redundancy' circuit.