This paper presents fingerprint image enhancement and rotation schemes that improve the identification accuracy with the pixel-parallel processing of pixels. In the schemes, the range of the fingerprint sensor is adjusted to the finger state, the captured image is retouched to obtain the suitable image for identification, and the image is rotated to the correct angle on the pixel array. Sensor and pixel circuits that provide these operations were devised and a test chip was fabricated using 0.25-µm CMOS and the sensor process. It was confirmed in 150,000 identification tests that the schemes reduce the false rejection rate to 6.17% from 30.59%, when the false acceptance rate is 0.1%.

This paper describes an adaptive fingerprint-sensing scheme for a user authentication system with a fingerprint sensor LSI to obtain high-quality fingerprint images suitable for identification. The scheme is based on novel evaluation indexes of fingerprint-image quality and adjustable analog-to-digital (A/D) conversion. The scheme adjusts dynamically an A/D conversion range of the fingerprint sensor LSI while evaluating the image quality during real-time fingerprint-sensing operation. The evaluation indexes pertain to the contrast and the ridgelines of a fingerprint image. The A/D conversion range is adjusted by changing quantization resolution and offset. We developed a fingerprint sensor LSI and a user authentication system to evaluate the adaptive fingerprint-sensing scheme. The scheme obtained a fingerprint image suitable for identification and the system achieved an accurate identification rate with 0.36% of the false rejection rate (FRR) at 0.075% of the false acceptance rate (FAR). This confirms that the scheme is very effective in achieving accurate identification.

This paper describes the effect of lowering the supply voltage and threshold voltages on the energy reduction of an ultralow-voltage multi-threshold CMOS/SIMOX (MTCMOS/SIMOX) circuit. The energy dissipation is evaluated using a graph with equispeed and equienergy lines on a supply voltage and a threshold voltage plane. In order to draw equispeed and equienergy lines for ultralow-voltage circuits, we propose a modified energy-evaluation model taking into account a input-waveform transition-time of the circuits. The validity of the proposed energy-evaluation model is confirmed by the evaluation of a gate-chain TEG and a 16-bit CLA adder fabricated with 0.25-µm MTCMOS/SIMOX technology. Using the modified model, the energy-reduction effect in lowering the supply voltage is evaluated for a single-Vth fully-depleted CMOS/SOI circuit, a dual-Vth CMOS circuit consisting of fully-depleted low- and medium-Vth MOSFETs, and a triple-Vth MTCMOS/SIMOX circuit. The evaluation reveals that lowering the supply voltage of the MTCMOS/SIMOX circuit to 0.5 V is advantageous for the energy reduction at a constant operating speed.

A pass-transistor logic is enhanced with a bootstrap configuration for sub-1 V operation at high speed and low power. The bootstrap configuration drives the output to full swing, which accelerates the signal transition and cuts off the short-circuit current of subsequent CMOS logic gates. The asynchronous or synchronous timing sequence of the input (drain) and the control (gate) signals ensures bootstrap operation. A 1-b arithmetic logic unit (ALU) and an EXNOR gate built with the bootstrap pass-transistor logic outperforms those built with other types of pass-transistor logic. An experimental 16-b pass-transistor adder operates down to 0.4 V with a delay time of 4.2 ns and a power dissipation of 2.8 µ W/MHz at 0.5 V.