An Ultra Low Voltage SOI CMOS Pass-Gate Logic

Tsuneaki FUSE, Yukihito OOWAKI, Mamoru TERAUCHI, Shigeyoshi WATANABE, Makoto YOSHIMI, Kazunori OHUCHI, Jun'ichi MATSUNAGA

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Summary :

An ultra low voltage CMOS pass-gate logic using body-bias controlled SOI MOSFETs has been developed. The logic is composed of gate-body connected SOI pass-gates and a CMOS buffer with the body-bias controlled by the complementary double-rail input. The full-adder using the proposed logic improved the lowest operation voltage by 27%, compared with the SOI CPL (Complementary Pass-Gate Logic). For a 16 16 bit multiplier, the power-delay product achieved 70 pJ (including 50 pF I/O) at 0.5 V power supply, which was more than 1 order of magnitude improvement over the bulk CPL.

Publication
IEICE TRANSACTIONS on Electronics Vol.E80-C No.3 pp.472-477
Publication Date
1997/03/25
Publicized
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DOI
Type of Manuscript
Special Section PAPER (Special Issue on SOI Devices and Their Process Technologies)
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