Improvement of Adjacent Channel Leakage Power and Intermodulation Distortion by Using a GaAs FET Linearizer with a Large Source Inductance

Kazutomi MORI; Kazuhisa YAMAUCHI; Masatoshi NAKAYAMA; Yasushi ITOH; Tadashi TAKAGI; Hidetoshi KUREBAYASHI

Improvement of Adjacent Channel Leakage Power and Intermodulation Distortion by Using a GaAs FET Linearizer with a Large Source Inductance

Kazutomi MORI, Kazuhisa YAMAUCHI, Masatoshi NAKAYAMA, Yasushi ITOH, Tadashi TAKAGI, Hidetoshi KUREBAYASHI

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This paper describes the design, fabrication, and performance of a GaAs FET linearizer with a large source inductance, focusing mainly on (a) a mechanism of positive gain and negative phase deviations for input power, (b) stability considerations, and (c) a dependence on load impedance. In addition, in an application to the linearized amplifier, it is shown that an improvement can be achieved for adjacent channel leakage power (ACP) and third order intermodulation distortion (IM₃) with the use of the linearizer.

Publication: IEICE TRANSACTIONS on Electronics Vol.E80-C No.6 pp.775-781

Publication Date: 1997/06/25

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Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeterwave High-power Devices)

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Kazutomi MORI, Kazuhisa YAMAUCHI, Masatoshi NAKAYAMA, Yasushi ITOH, Tadashi TAKAGI, Hidetoshi KUREBAYASHI, "Improvement of Adjacent Channel Leakage Power and Intermodulation Distortion by Using a GaAs FET Linearizer with a Large Source Inductance" in IEICE TRANSACTIONS on Electronics, vol. E80-C, no. 6, pp. 775-781, June 1997, doi: .
Abstract: This paper describes the design, fabrication, and performance of a GaAs FET linearizer with a large source inductance, focusing mainly on (a) a mechanism of positive gain and negative phase deviations for input power, (b) stability considerations, and (c) a dependence on load impedance. In addition, in an application to the linearized amplifier, it is shown that an improvement can be achieved for adjacent channel leakage power (ACP) and third order intermodulation distortion (IM₃) with the use of the linearizer.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/e80-c_6_775/_p

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@ARTICLE{e80-c_6_775,
author={Kazutomi MORI, Kazuhisa YAMAUCHI, Masatoshi NAKAYAMA, Yasushi ITOH, Tadashi TAKAGI, Hidetoshi KUREBAYASHI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Improvement of Adjacent Channel Leakage Power and Intermodulation Distortion by Using a GaAs FET Linearizer with a Large Source Inductance},
year={1997},
volume={E80-C},
number={6},
pages={775-781},
abstract={This paper describes the design, fabrication, and performance of a GaAs FET linearizer with a large source inductance, focusing mainly on (a) a mechanism of positive gain and negative phase deviations for input power, (b) stability considerations, and (c) a dependence on load impedance. In addition, in an application to the linearized amplifier, it is shown that an improvement can be achieved for adjacent channel leakage power (ACP) and third order intermodulation distortion (IM₃) with the use of the linearizer.},
keywords={},
doi={},
ISSN={},
month={June},}

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TY - JOUR
TI - Improvement of Adjacent Channel Leakage Power and Intermodulation Distortion by Using a GaAs FET Linearizer with a Large Source Inductance
T2 - IEICE TRANSACTIONS on Electronics
SP - 775
EP - 781
AU - Kazutomi MORI
AU - Kazuhisa YAMAUCHI
AU - Masatoshi NAKAYAMA
AU - Yasushi ITOH
AU - Tadashi TAKAGI
AU - Hidetoshi KUREBAYASHI
PY - 1997
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E80-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 1997
AB - This paper describes the design, fabrication, and performance of a GaAs FET linearizer with a large source inductance, focusing mainly on (a) a mechanism of positive gain and negative phase deviations for input power, (b) stability considerations, and (c) a dependence on load impedance. In addition, in an application to the linearized amplifier, it is shown that an improvement can be achieved for adjacent channel leakage power (ACP) and third order intermodulation distortion (IM₃) with the use of the linearizer.
ER -