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This paper presents a novel design scheme for a band-switchable multi-band power amplifier (BS-MPA). A key point of the design scheme is configuring multi-section reconfigurable matching networks (MR-MNs) optimally in terms of low loss matching in multiple frequency bands from 0.7 to 2.5 GHz. The MR-MN consists of several matching sections, each of which has a matching block connected to a transmission line via a switch. Power dissipation at an actual on-state switch results in the insertion loss of the MR-MN and depends on how the impedance is transformed by the MR-MN. The proposed design scheme appropriately transforms the impedance of a high power transistor to configure a low loss MR-MN. Numerical analyses show quantitative improvement in the loss using the proposed scheme. A 9-band 3-stage BS-MPA is newly designed following the proposed scheme and fabricated on a multi-layer low temperature co-fired ceramic substrate for compactness. The BS-MPA achieves a gain of over 30 dB, an output power of greater than 33 dBm and a power added efficiency of over 40% at the supply voltage of 4 V in each operating band.
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Atsushi FUKUDA, Takayuki FURUTA, Hiroshi OKAZAKI, Shoichi NARAHASHI, Toshio NOJIMA, "Low-Loss Matching Network Design for Band-Switchable Multi-Band Power Amplifier" in IEICE TRANSACTIONS on Electronics,
vol. E95-C, no. 7, pp. 1172-1181, July 2012, doi: 10.1587/transele.E95.C.1172.
Abstract: This paper presents a novel design scheme for a band-switchable multi-band power amplifier (BS-MPA). A key point of the design scheme is configuring multi-section reconfigurable matching networks (MR-MNs) optimally in terms of low loss matching in multiple frequency bands from 0.7 to 2.5 GHz. The MR-MN consists of several matching sections, each of which has a matching block connected to a transmission line via a switch. Power dissipation at an actual on-state switch results in the insertion loss of the MR-MN and depends on how the impedance is transformed by the MR-MN. The proposed design scheme appropriately transforms the impedance of a high power transistor to configure a low loss MR-MN. Numerical analyses show quantitative improvement in the loss using the proposed scheme. A 9-band 3-stage BS-MPA is newly designed following the proposed scheme and fabricated on a multi-layer low temperature co-fired ceramic substrate for compactness. The BS-MPA achieves a gain of over 30 dB, an output power of greater than 33 dBm and a power added efficiency of over 40% at the supply voltage of 4 V in each operating band.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/transele.E95.C.1172/_p
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@ARTICLE{e95-c_7_1172,
author={Atsushi FUKUDA, Takayuki FURUTA, Hiroshi OKAZAKI, Shoichi NARAHASHI, Toshio NOJIMA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Low-Loss Matching Network Design for Band-Switchable Multi-Band Power Amplifier},
year={2012},
volume={E95-C},
number={7},
pages={1172-1181},
abstract={This paper presents a novel design scheme for a band-switchable multi-band power amplifier (BS-MPA). A key point of the design scheme is configuring multi-section reconfigurable matching networks (MR-MNs) optimally in terms of low loss matching in multiple frequency bands from 0.7 to 2.5 GHz. The MR-MN consists of several matching sections, each of which has a matching block connected to a transmission line via a switch. Power dissipation at an actual on-state switch results in the insertion loss of the MR-MN and depends on how the impedance is transformed by the MR-MN. The proposed design scheme appropriately transforms the impedance of a high power transistor to configure a low loss MR-MN. Numerical analyses show quantitative improvement in the loss using the proposed scheme. A 9-band 3-stage BS-MPA is newly designed following the proposed scheme and fabricated on a multi-layer low temperature co-fired ceramic substrate for compactness. The BS-MPA achieves a gain of over 30 dB, an output power of greater than 33 dBm and a power added efficiency of over 40% at the supply voltage of 4 V in each operating band.},
keywords={},
doi={10.1587/transele.E95.C.1172},
ISSN={1745-1353},
month={July},}
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TY - JOUR
TI - Low-Loss Matching Network Design for Band-Switchable Multi-Band Power Amplifier
T2 - IEICE TRANSACTIONS on Electronics
SP - 1172
EP - 1181
AU - Atsushi FUKUDA
AU - Takayuki FURUTA
AU - Hiroshi OKAZAKI
AU - Shoichi NARAHASHI
AU - Toshio NOJIMA
PY - 2012
DO - 10.1587/transele.E95.C.1172
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E95-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2012
AB - This paper presents a novel design scheme for a band-switchable multi-band power amplifier (BS-MPA). A key point of the design scheme is configuring multi-section reconfigurable matching networks (MR-MNs) optimally in terms of low loss matching in multiple frequency bands from 0.7 to 2.5 GHz. The MR-MN consists of several matching sections, each of which has a matching block connected to a transmission line via a switch. Power dissipation at an actual on-state switch results in the insertion loss of the MR-MN and depends on how the impedance is transformed by the MR-MN. The proposed design scheme appropriately transforms the impedance of a high power transistor to configure a low loss MR-MN. Numerical analyses show quantitative improvement in the loss using the proposed scheme. A 9-band 3-stage BS-MPA is newly designed following the proposed scheme and fabricated on a multi-layer low temperature co-fired ceramic substrate for compactness. The BS-MPA achieves a gain of over 30 dB, an output power of greater than 33 dBm and a power added efficiency of over 40% at the supply voltage of 4 V in each operating band.
ER -