A 1-Transistor 4-Magnetic Tunnel Junction (1T-4MTJ) memory cell has been proposed for field type of Magnetic Random Access Memory (MRAM). Proposed 1T-4MTJ memory cell array is achieved 44% higher density than that of conventional 1T-1MTJ thanks to the common access transistor structure in a 4-bit memory cell. A self-reference sensing scheme which can read out with write-back in four clock cycles has been also proposed. Furthermore, we add to estimate with considering sense amplifier variation and show 1T-4MTJ cell configuration is the best solution in IoT applications. A 1-Mbit MRAM test chip is designed and fabricated successfully using 130-nm CMOS process. By applying 1T-4MTJ high density cell and partially embedded wordline driver peripheral into the cell array, the 1-Mbit macro size is 4.04 mm2 which is 35.7% smaller than the conventional one. Measured data shows that the read access is 55 ns at 1.5 V typical supply voltage and 25C. Combining with conventional high-speed 1T-1MTJ caches and proposed high-density 1T-4MTJ user memories is an effective on-chip hierarchical non-volatile memory solution, being implemented for low-power MCUs and SoCs of IoT applications.

Various low power technologies have been developed and applied to LSIs from the point of device and circuit design. A lot more CPU cores as well as function IPs are integrated on a single chip LSI today. Therefore, not only the device and circuit low power technologies, but software power control technologies are becoming more important to reduce active power of application systems. This paper overviews the low power technologies and defines power management platform as a combination of hardware functions and software programming interface. This paper discusses importance of the power management platform and direction of its development.

RXv2 is the new generation of Renesas's processor architecture for microcontrollers with high-capacity flash memory. An enhanced instruction set and pipeline structure with an advanced fetch unit (AFU) provide an effective balance between power consumption performance and high processing performance. Enhanced instructions such as DSP function and floating point operation and a five-stage dual-issue pipeline synergistically boost the performance of digital signal applications. The RXv2 processor delivers 1.9 - 3.7 the cycle performance of the RXv1 in these applications. The decrease of the number of Flash memory accesses by AFU is a dominant determiner of reducing power consumption. AFU of RXv2 benefits from adopting branch target cache, which has a comparatively smaller area than that of typical cache systems. High code density delivers low power consumption by reducing instruction memory bandwidth. The implementation of RXv2 delivers up to 46% reduction in static code size, up to 30% reduction in dynamic code size relative to RISC architectures. RXv2 reaches 4.0 Coremark per MHz and operates up to 240MHz. The RXv2 processor delivers approximately more than 2.2 - 5.7x the power efficiency of the RXv1. The RXv2 microprocessor achieves the best possible computing performance in various applications such as building automation, medical, motor control, e-metering, and home appliances which lead to the higher memory capacity, frequency and processing performance.

We apply a selective-sets resizable cache and a complete hierarchy SRAM for the high-performance and low-power RISC CPU core. The selective-sets resizable cache can change the cache memory size by varying the number of cache sets. It reduces the leakage current by 23% with slight degradation of the worst case operating speed from 213 MHz to 210 MHz. The complete hierarchy SRAM enables the partial swing operation not only in the bit lines, but also in the global signal lines. It reduces the current consumption of the memory by 4.6%, and attains the high-speed access of 1.4 ns in the typical case.