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Takashi KURAFUJI Yasunobu NAKASE Hidehiro TAKATA Yukinaga IMAMURA Rei AKIYAMA Tadao YAMANAKA Atsushi IWABU Shutarou YASUDA Toshitsugu MIWA Yasuhiro NUNOMURA Niichi ITOH Tetsuya KAGEMOTO Nobuharu YOSHIOKA Takeshi SHIBAGAKI Hiroyuki KONDO Masayuki KOYAMA Takahiko ARAKAWA Shuhei IWADE
We apply a selective-sets resizable cache and a complete hierarchy SRAM for the high-performance and low-power RISC CPU core. The selective-sets resizable cache can change the cache memory size by varying the number of cache sets. It reduces the leakage current by 23% with slight degradation of the worst case operating speed from 213 MHz to 210 MHz. The complete hierarchy SRAM enables the partial swing operation not only in the bit lines, but also in the global signal lines. It reduces the current consumption of the memory by 4.6%, and attains the high-speed access of 1.4 ns in the typical case.
Akira YAMADA Yasuhiro NUNOMURA Hiroaki SUZUKI Hisakazu SATO Niichi ITOH Tetsuya KAGEMOTO Hironobu ITO Takashi KURAFUJI Nobuharu YOSHIOKA Jingo NAKANISHI Hiromi NOTANI Rei AKIYAMA Atsushi IWABU Tadao YAMANAKA Hidehiro TAKATA Takeshi SHIBAGAKI Takahiko ARAKAWA Hiroshi MAKINO Osamu TOMISAWA Shuhei IWADE
A high-speed 32-bit RISC microcontroller has been developed. In order to realize high-speed operation with minimum hardware resource, we have developed new design and analysis methods such as a clock distribution, a bus-line layout, and an IR drop analysis. As a result, high-speed operation of 400 MHz has been achieved with power dissipation of 0.96 W at 1.8 V.
Hisakazu SATO Yasuhiro NUNOMURA Niichi ITOH Koji NII Kanako YOSHIDA Hironobu ITO Jingo NAKANISHI Hidehiro TAKATA Yasunobu NAKASE Hiroshi MAKINO Akira YAMADA Takahiko ARAKAWA Toru SHIMIZU Yuichi HIRANO Takashi IPPOSHI Shuhei IWADE
A low-power microcontroller has been developed with 0.10 µm bulk compatible body-tied SOI technology. For this work, only two new masks are required. For the other layers, existing masks of a prior work developed with 0.18 µm bulk CMOS technology can be applied without any changes. With the SOI technology, the high-speed operation of over 600 MHz has been achieved at a supply voltage of 1.2 V, which is 1.5 times faster than prior work. Also, a five times improvement in the power-delay product has been achieved at a supply voltage 0.8 V. Moreover, the compatibility of the SOI technology with bulk CMOS has been verified, because all circuit blocks of the chip, including logic, memory, analog circuit, and PLL, are completely functional, even though only two new masks are used.