In a frequency-selective multiple-input multiple-output (MIMO) channel, the optimum transmission is achieved by beamforming with eigenvectors obtained at each discrete frequency point, i.e., an extension of eigenbeam-space division multiplexing (E-SDM). However, the calculation load of eigenvalue decomposition at the transmitter increases in proportion to the number of frequency points. In addition, frequency-independent eigenvectors increase the delay spread of the effective channel observed at the receiver. In this paper, we propose a pseudo eigenvector scheme for the purpose of mitigating the calculation load and maintaining frequency continuity (or decreasing the delay spread). First, we demonstrate that pseudo eigenvectors reduce the delay spread of the effective channels with low computational complexity. Next, the practical performance of the pseudo E-SDM (PE-SDM) transmission is evaluated. The simulation results show that PE-SDM provides almost the same or better performance compared with E-SDM when the receiver employs a time-windowing-based channel estimation available in the low delay spread cases.

In this work, a simple method for extracting MOSFET threshold voltage, effective channel length and channel mobility by using S-parameter measurement is presented. In the new method, the dependence between the channel conductivity and applied gate voltage of the MOSFET device is cleverly utilized to extract the threshold voltage, while biasing the drain node of the device at zero voltage during measurement. Moreover, the effective channel length and channel mobility can also be obtained with the same measurement. Furthermore, all the physical parameters can be extracted directly on the modeling devices without relying on specifically designed test devices. Most important of all, only one S-parameter measurement is required for each device under test (DUT), making the proposed extraction method promising for automatic measurement applications.

A novel effective channel length extraction method has been developed, which utilizes the difference between the local threshold voltage of channel region and that of external region. In this method, the dependence of external resistance on Vg is taken into account, and it is not necessary to extract Vth. It is found that the external resistance can be approximated as the linear function of Vg with Vg around Vth. For a 0.4 µm gate length LDD MOSFET, the accuracy and resolution are estimated to be less than 0.02 µm and 0.003 µm, respectively.