IEICE TRANSACTIONS on Electronics

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Advance publication (published online immediately after acceptance)

Volume E89-C No.11  (Publication Date:2006/11/01)

    Special Section on Novel Device Architectures and System Integration Technologies
  • FOREWORD

    Takahiro HANYU  

     
    FOREWORD

      Page(s):
    1491-1491
  • Solid-Electrolyte Nanometer Switch

    Naoki BANNO  Toshitsugu SAKAMOTO  Noriyuki IGUCHI  Hisao KAWAURA  Shunichi KAERIYAMA  Masayuki MIZUNO  Kozuya TERABE  Tsuyoshi HASEGAWA  Masakazu AONO  

     
    INVITED PAPER

      Page(s):
    1492-1498

    We have developed a solid-electrolyte nonvolatile switch (here we refer as NanoBridge) with a low ON resistance and its small size. When we use a NanoBridge to switch elements in a programmable logic device, the chip size (or die cost) can be reduced and performance (speed and power consumption) can be enhanced. Developing this application required solving a couple of problems. First, the switching voltage of the NanoBridge (0.3 V) needed to be larger than the operating voltage of the logic circuit (>1 V). Second, the programming current (>1 mA) needed to be suppressed to avoid large power consumption. We demonstrate how the Nanobridge enhances the switching voltage and reduces the programming current.

  • Carbon Nanotube Technologies for LSI via Interconnects

    Yuji AWANO  

     
    INVITED PAPER

      Page(s):
    1499-1503

    Carbon nanotubes (CNTs) offer unique properties such as highest current density exceeding 109 A/cm2, ultra-high thermal conductivity as high as that of diamond, ballistic transport along the tube and extremely high mechanical strength with high aspect ratio of more than 1000. Because of these remarkable properties, they have been expected for use as future wiring materials to solve several problems, for examples, stress and electro-migration, heat removal and fabrication of a small-sized via in future LSIs. In this paper, we demonstrate present status of CNT material technologies and the potential of metallic CNT vias. In particular, we report our original catalytic nano-particle technique for controlling the diameter and density of CNTs. We have succeeded in forming a 40-nm via with the CNT density of 91011/cm2, which is the highest density ever reported. The low temperature CVD growth and the electrical properties of CNT vias are also discussed.

  • Single-Electron Logic Systems Based on a Graphical Representation of Digital Functions

    Yoshihito AMEMIYA  

     
    INVITED PAPER

      Page(s):
    1504-1511

    This paper outlines the method of constructing single-electron logic circuits based on the binary decision diagram (BDD), a graphical representation of digital functions. The circuit consists of many unit devices, BDD devices, cascaded to build the tree of a BDD graph. Each BDD device corresponds to a node of the BDD graph and operates as a two-way switch for the transport of a single electron. Any combinatorial logic can be implemented using BDD circuits. Several subsystems for a single-electron processor have been constructed using semiconductor nano-process technology.

  • Design and Evaluation of a Massively Parallel Processor Based on Matrix Architecture

    Toru SHIMIZU  Masami NAKAJIMA  Masahiro KAINAGA  

     
    INVITED PAPER

      Page(s):
    1512-1518

    This paper describes the design and evaluation of a massively parallel processor base on Matrix architecture which is suitable for portable multimedia applications. The proposed architecture in this paper achieves 40 GOPS of 16-bit fixed-point additions at 200 MHz clock frequency and 250 mW power dissipation. In addition, 1 M-bit SRAM for data registers and 2,048 2-bit processing elements connected by a flexible switching network are integrated in 3.1 mm2 in 90 nm low-power CMOS technology. The energy-efficient Matrix architecture supports 2,048-way parallel operations and the programmable functions required for multimedia SoCs.

  • An On-Chip Supply-Voltage Control System Considering PVT Variations for Worst-Caseless Lower Voltage SoC Design

    Takayuki GYOHTEN  Fukashi MORISHITA  Isamu HAYASHI  Mako OKAMOTO  Hideyuki NODA  Katsumi DOSAKA  Kazutami ARIMOTO  Yasutaka HORIBA  

     
    PAPER

      Page(s):
    1519-1525

    Adaptive voltage management (AVM) scheme is proposed for worst-caseless lower voltage SoC design. The AVM scheme detects the temperature accurately by using two oscillators with different temperature characteristics, and sets supply voltage most suitable with a table look-up method corresponding to the process variation. Also, the AVM can supply the stable voltage with a local shift type regulator even at lower voltage. Thereby, this supply-voltage control system considering PVT variations can control the internal voltage corresponding to process and temperature variations and can realize a wide-operating-margin, DFM function for low voltage SoC. The experimental chip is fabricated on a 90 nm CMOS process, and it was confirmed that the proposed architecture controls the voltage accurately and has a wide operating margin at a lower voltage.

  • A Differential Cell Terminal Biasing Scheme Enabling a Stable Write Operation against a Large Random Threshold Voltage (Vth) Variation

    Hiroyuki YAMAUCHI  Toshikazu SUZUKI  Yoshinobu YAMAGAMI  

     
    PAPER

      Page(s):
    1526-1534

    Fundamental limitation on assisting a write margin (WRTM) by reducing the cell terminal bias (VDDM) has been made clear for the first time and the new cell terminal biasing scheme featuring a differential VDDM (Diff-VDDM) control has been proposed to address the issues which the conventional schemes proposed so far can not overcome [1]-[5]. Since Diff-VDDM biasing scheme can meet the both of the requirements simultaneously of 1) reducing drivability for the PMOS load transistor on the "Low" written bit-line (BL) side, and 2) increasing drivability for the other side PMOS for a write recovery, it can provide a lower minimum operating voltage (Vdd_min) for the write operation even if considering a sufficiently-large random threshold voltage (Vth) variations. The following points have been shown based on an actual 65 nm CMOS device variation data and the implemented layout data that 1) Vdd_min for the write operation can be lowered from Vdd=1.1 V down to 0.8 V when considering a 4-sigma (σ) variation, 2) the write recovery time can be reduced by 92% and 70% that for the conventional schemes [1],[2] at Vdd=0.7 V and 1.0 V, respectively, and 3) WRTM defined by the percentage (%) of the required (BL pull-down level/Vdd) to flip the cell nodes for the write operation can be relaxed by 2.6-fold and 1.4-fold that for the conventional schemes [1],[2] at Vdd=0.75 V and 1.0 V, respectively. As an actual implementation in a 65 nm CMOS, a 32-kbit single-port SRAM macro design and the measured butterfly curves have been demonstrated.

  • An Integrated Timing and Dynamic Supply Noise Verification for Multi-10-Million Gate SoC Designs

    Kenji SHIMAZAKI  Makoto NAGATA  Mitsuya FUKAZAWA  Shingo MIYAHARA  Masaaki HIRATA  Kazuhiro SATOH  Hiroyuki TSUJIKAWA  

     
    PAPER

      Page(s):
    1535-1543

    We propose a semi-dynamic timing analysis flow applicable to large-scale circuits that takes into account dynamic power-supply drop. Logic delay is accurately estimated in the presence of power-supply noise through timing correction as a function of power-supply voltage during operation, where a time-dependent power-supply noise waveform is derived by way of a vectorless technique. Measurements and analysis of dynamic supply-noise waveforms and associated delay changes were performed on a sub-100-nm CMOS test circuit with embedded on-chip noise detectors and delay monitors. The proposed analysis technique was extended and applied to a test digital circuit with more than 10 million gates and validated toward a multi-10-million-gate CMOS SoC design.

  • Chip-Level Performance Improvement Using Triple Damascene Wiring Design Concept for the 0.13 µm CMOS Generation and Beyond

    Noriaki ODA  Hiroyuki KUNISHIMA  Takashi KYOUNO  Kazuhiro TAKEDA  Tomoaki TANAKA  Toshiyuki TAKEWAKI  Masahiro IKEDA  

     
    PAPER

      Page(s):
    1544-1550

    A novel wiring design concept called "Triple Damascene" is presented. We propose a new technology to mix wirings with different thickness in one layer by using dual damascene process without increasing mask steps. In this technology, three types of grooves are opened simultaneously. Deep trenches for thick wires, as well as vias and shallow trenches, are selectively opened. By the design concept using this technology, a 30% reduction in wiring delay is obtained for critical path. A 5% reduction in chip size is also obtained as the effect of decrease in repeater number for a typical high-performance multi-processing unit (MPU) in 0.13 µm generation. An example for performance enhancement in an actual product of graphic MPU chip is also demonstrated.

  • Minimizing Energy Consumption Based on Dual-Supply-Voltage Assignment and Interconnection Simplification

    Masanori HARIYAMA  Shigeo YAMADERA  Michitaka KAMEYAMA  

     
    PAPER

      Page(s):
    1551-1558

    This paper presents a design method to minimize energy of both functional units (FUs) and an interconnection network between FUs. To reduce complexity of the interconnection network, data transfers between FUs are classified according to FU types of operations in a data flow graph. The basic idea behind reducing the complexity of the interconnection network is that the interconnection resource can be shared among data transfers with the same FU type of a source node and the same FU type of a destination node. Moreover, an efficient method based on a genetic algorithm is presented.

  • Measurement-Based Analysis of Delay Variation Induced by Dynamic Power Supply Noise

    Mitsuya FUKAZAWA  Makoto NAGATA  

     
    PAPER

      Page(s):
    1559-1566

    Accurate on-chip 100-ps/100-µV waveform measurements of signal transition in a large-scale digital integrated circuit clearly demonstrates the correlation of dynamic delay variation with power supply noise waveforms. In addition to the linear dependence of delay increase with the height of static IR drop, the distortion of a signal waveform during a logic transition that is induced by dynamic power supply noise causes significant delay variation. However, an analysis reveals that average modeling of dynamic power supply noise, which is often used in conventional simulation techniques, cannot match the experimentally measured values. Our proposed circuit simulation technique, which incorporates time-domain power supply noise waveform macro models along with parasitic impedance networks, reproduces the delay variation well, even with a relative timing difference among different clock domains. Such basic knowledge can be applied in precise delay calculations that consider dynamic power supply noise, a crucial factor in deep sub-100-nm LSI design.

  • High-Frequency Low-Noise Voltage-Controlled LC-Tank Oscillators Using a Tunable Inductor Technique

    Ching-Yuan YANG  Meng-Ting TSAI  

     
    PAPER

      Page(s):
    1567-1574

    This paper describes 3-GHz and 7-GHz tunable-inductance LC-tank voltage-controlled oscillators (VCOs) implemented in 0.18-µm CMOS technology. Unlike the traditional tuning method by a varactor, a tunable inductor is employed in the VCO by using a transformer to compensate for the energy loss. The VCO facilitates the tuning frequency and low noise of the output signals, together with a variable inductor which satisfies both criteria. The 3-GHz VCO using a symmetry transformer provides the tuning range of 2.85 to 3.12 GHz at 1-V supply. The power consumption is 4.8 mW while the measured phase noise is -126 dBc/Hz at 1-MHz offset from a 2.85-GHz carrier. A small-area stacked transformer is employed in the 7-GHz VCO, which achieves a tuning range of 6.59 to 7.02 GHz and measured phase noise of -114 dBc/Hz at 1-MHz offset from a 6.59-GHz carrier while consuming 9 mW from a 1.2-V supply.

  • Design and Evaluation of a NULL-Convention Circuit Based on Dual-Rail Current-Mode Differential Logic

    Naoya ONIZAWA  Takahiro HANYU  

     
    PAPER

      Page(s):
    1575-1580

    A NULL-convention circuit based on dual-rail current-mode differential logic is proposed for a high-performance asynchronous VLSI. Since input/output signals are mapped to dual-rail current signals, the NULL-convention circuit can be directly implemented based on the dual-rail differential logic, which results in the reduction of the device counts. As a typical example, a NULL-convention logic based full adder using the proposed circuit is implemented by a 0.18 µm CMOS technology. Its delay, power dissipation and area are reduced to 61 percent, 60 percent and 62 percent, respectively, in comparison with those of a corresponding CMOS implementation.

  • Back-End Design of a Collision-Resistive RFID System through High-Level Modeling Approach

    Yohei FUKUMIZU  Makoto NAGATA  Kazuo TAKI  

     
    PAPER

      Page(s):
    1581-1590

    A highly collision-resistive RFID system multiplexes communications between thousands of transponders and a single reader using TH-CDMA based anti-collision scheme. This paper focuses on the back-end design consideration of such an RFID system with the deployment of high-level modeling techniques, accompanying a technical comparison of physical-level description, hardware-based emulation, and software-based simulation. A new rapid-prototyping simulation system was constructed to evaluate the robustness of a multiplexed RFID link system with more than 1,000 channels in the presence of field disturbances, and the design parameters of the back-end digital signal processing that dominated anti-collision performance were explored. Finally, the derived optimum parameters were applied to the design of a back-end digital integrated circuit to be installed in collision-resistive transponder circuitry.

  • Design of a Low-Power Quaternary Flip-Flop Based on Dynamic Differential Logic

    Akira MOCHIZUKI  Hirokatsu SHIRAHAMA  Takahiro HANYU  

     
    PAPER

      Page(s):
    1591-1597

    A new static storage component, a quaternary flip-flop which consists of two-bit storage elements and three four-level voltage comparators, is proposed for a high-performance multiple-valued VLSI-processor datapath. A key circuit, a differential-pair circuit (DPC), is used to realize a high-speed multi-level voltage comparator. Since PMOS cross-coupled transistors are utilized as not only active loads of the DPC-based comparator but also parts of each storage element, the critical delay path of the proposed flip-flop can be shortened. Moreover, a dynamic logic style is also used to cut steady current paths through current sources in DPCs, which results in great reduction of its power dissipation. It is evaluated with HSPICE simulation in 0.18 µm CMOS that the power dissipations of the proposed quaternary flip-flop is reduced to 50 percent in comparison with that of a corresponding binary CMOS one.

  • Implementation of a High-Speed Asynchronous Data-Transfer Chip Based on Multiple-Valued Current-Signal Multiplexing

    Tomohiro TAKAHASHI  Takahiro HANYU  

     
    PAPER

      Page(s):
    1598-1604

    This paper presents an asynchronous multiple-valued current-mode data-transfer controller chip based on a 1-phase dual-rail encoding technique. The proposed encoding technique enables "one-way delay" asynchronous data transfer because request and acknowledge signals can be transmitted simultaneously and valid states are detected by calculating the sum of dual-rail codewords. Since a key component, a current-to-voltage conversion circuit in a valid-state detector, is tuned so as to obtain a sufficient voltage range to improve switching speed of a comparator, signal detection can be performed quickly in spite of using 6-level signals. It is evaluated using HSPICE simulation with a 0.18-µm CMOS that the throughput of the proposed circuit based on the 1-phase dual-rail scheme attains 435 Mbps/wire which is 2.9 times faster than that of a CMOS circuit based on a conventional 4-phase dual-rail scheme. The test chip is fabricated, and the asynchronous data-transfer behavior of the proposed scheme is confirmed.

  • Vision Chip Architecture for Detecting Line of Sight Including Saccade

    Junichi AKITA  Hiroaki TAKAGI  Takeshi NAGASAKI  Masashi TODA  Toshio KAWASHIMA  Akio KITAGAWA  

     
    PAPER

      Page(s):
    1605-1611

    Rapid eye motion, or so called saccade, is a very quick eye motion which always occurs regardless of our intention. Although the line of sight (LOS) with saccade tracking is expected to be used for a new type of computer-human interface, it is impossible to track it using the conventional video camera, because of its speed which is often up to 600 degrees per second. Vision Chip is an intelligent image sensor which has the photo receptor and the image processing circuitry on a single chip, which can process the acquired image information by keeping its spatial parallelism. It has also the ability of implementing the very compact integrated vision system. In this paper, we describe the vision chip architecture which has the capability of detecting the line of sight from infrared eye image, with the processing speed supporting the saccade tracking. The vision chip described here has the pixel parallel processing architecture, with the node automata for each pixel as image processing. The acquired image is digitized to two flags indicating the Purkinje's image and the pupil by comparators at first. The digitized images are then shrunk, followed by several steps of expanding by node automata located at each pixel. The shrinking process is kept executed until all the pixels disappear, and the pixel disappearing at last indicates the center of the Purkinje's image and the pupil. This disappearing step is detected by the projection circuitry in pixel circuit for fast operation, and the coordinates of the center of the Purkinje's image and the pupil are generated by the simple encoders. We describe the whole architecture of this vision chip, as well as the pixel architecture. We also describe the evaluation of proposed algorithm with numerical simulation, as well as processing speed using FPGA, and improvement in resolution using column parallel architecture.

  • A Reliability-Enhanced TCAM Architecture with Associated Embedded DRAM and ECC

    Hideyuki NODA  Katsumi DOSAKA  Hans Jurgen MATTAUSCH  Tetsushi KOIDE  Fukashi MORISHITA  Kazutami ARIMOTO  

     
    PAPER

      Page(s):
    1612-1619

    This paper describes a novel TCAM architecture designed for enhancing the soft-error immunity. An associated embedded DRAM and ECC circuits are placed next to TCAM macro to implement a unique methodology of recovering upset bits due to soft errors. The proposed configuration allows an improvement of soft-error immunity by 6 orders of magnitude compared with the conventional TCAM. We also propose a novel testing methodology of the soft-error rate with a fast parallel multi-bit test. In addition, the proposed architecture resolves the critical problem of the look-up table maintenance of TCAM. The design techniques reported in this paper are especially attractive for realizing soft-error immune, high-performance TCAM chips.

  • Cache-Based Network Processor Architecture: Evaluation with Real Network Traffic

    Michitaka OKUNO  Shinji NISHIMURA  Shin-ichi ISHIDA  Hiroaki NISHI  

     
    PAPER

      Page(s):
    1620-1628

    A novel cache-based network processor (NP) architecture that can catch up with next generation 100-Gbps packet-processing throughput by exploiting a nature of network traffic is proposed, and the prototype is evaluated with real network traffic traces. This architecture consists of several small processing units (PUs) and a bit-stream manipulation hardware called a burst-stream path (BSP) that has a special cache mechanism called a process-learning cache (PLC) and a cache-miss handler (CMH). The PLC memorizes a packet-processing method with all table-lookup results, and applies it to subsequent packets that have the same information in their header. To avoid packet-processing blocking, the CMH handles cache-miss packets while registration processing is performed at the PLC. The combination of the PLC and CMH enables most packets to skip the execution at the PUs, which dissipate huge power in conventional NPs. We evaluated an FPGA-based prototype with real core network traffic traces of a WIDE backbone router. From the experimental results, we observed a special case where the packet of minimum size appeared in large quantities, and the cache-based NP was able to achieve 100% throughput with only the 10%-throughput PUs due to the existence of very high temporal locality of network traffic. From the whole results, the cache-based NP would be able to achieve 100-Gbps throughput by using 10- to 40-Gbps throughput PUs. The power consumption of the cache-based NP, which consists of 40-Gbps throughput PUs, is estimated to be only 44.7% that of a conventional NP.

  • A Power- and Area-Efficient SRAM Core Architecture with Segmentation-Free and Horizontal/Vertical Accessibility for Super-Parallel Video Processing

    Junichi MIYAKOSHI  Yuichiro MURACHI  Tomokazu ISHIHARA  Hiroshi KAWAGUCHI  Masahiko YOSHIMOTO  

     
    PAPER

      Page(s):
    1629-1636

    For super-parallel video processing, we proposed a power- and area-efficient SRAM core architecture with a segmentation-free access, which means accessibility to arbitrary consecutive pixels, and horizontal/vertical access. To achieve these flexible accesses, a spirally-connected local-wordline select signal and multi-selection scheme in wordlines are proposed, so that extra X-decoders in the conventional multi-division SRAM can be eliminated. Consequently, the proposed SRAM reduces a power and area by 57-60% and 60%, respectively, when it is applied to a 128 parallel architecture. The proposed 160-kbit SRAM with 16-read ports (2-read port SRAM with eight-parallel architecture) is implemented to a search window buffer for an H.264 motion estimation processor core which dissipates 800 µW for QCIF 15-fps in a 130-nm technology.

  • A VLSI Spiking Feedback Neural Network with Negative Thresholding and Its Application to Associative Memory

    Kan'ya SASAKI  Takashi MORIE  Atsushi IWATA  

     
    PAPER

      Page(s):
    1637-1644

    An integrate-and-fire-type spiking feedback network is discussed in this paper. In our spiking neuron model, analog information expressing processing results is given by the relative relation of spike firing. Therefore, for spiking feedback networks, all neurons should fire (pseudo-)periodically. However, an integrate-and-fire-type neuron generates no spike unless its internal potential exceeds the threshold. To solve this problem, we propose negative thresholding operation. In this paper, this operation is achieved by a global excitatory unit. This unit operates immediately after receiving the first spike input. We have designed a CMOS spiking feedback network VLSI circuit with the global excitatory unit for Hopfield-type associative memory. The circuit simulation results show that the network achieves correct association operation.

  • Systematic Interpretation of Redundant Arithmetic Adders in Binary and Multiple-Valued Logic

    Naofumi HOMMA  Takafumi AOKI  Tatsuo HIGUCHI  

     
    PAPER

      Page(s):
    1645-1654

    This paper presents an algorithm-level interpretation of fast adder structures in binary/multiple-valued logic. The key idea is to employ a unified representation of addition algorithms called Counter Tree Diagrams (CTDs). The use of CTDs makes it possible to describe and analyze addition algorithms at various levels of abstraction. A high-level CTD represents a network of coarse-grained components associated with multiple-valued logic devices, while a low-level CTD represents a network of primitive components directly mapped onto binary logic devices. The level of abstraction in circuit representation can be changed by decomposition of CTDs. We can derive possible variations of adder structures by decomposing a high-level CTD into low-level CTDs. This paper demonstrates the interpretation of redundant arithmetic adders based on CTDs. We first introduce an extension of CTDs to represent possible redundant arithmetic adders with limited carry propagation. Using the extended version of CTDs, we can classify the conventional adder structures including those using emerging devices into three types in a systematic way.

  • A Multi-Context FPGA Using Floating-Gate-MOS Functional Pass-Gates

    Masanori HARIYAMA  Sho OGATA  Michitaka KAMEYAMA  

     
    PAPER

      Page(s):
    1655-1661

    Multi-context FPGAs (MC-FPGAs) have multiple memory bits per configuration bit forming configuration planes for fast switching between contexts. The additional memory planes cause a large overhead in area when a number of contexts are used. To overcome the overhead, a fine-grained MC-FPGA architecture using a floating-gate-MOS functional pass gate (FGFP) is presented which merges threshold operation and storage function on a single floating-gate MOS transistor. The test chip is designed using a 0.35 µm CMOS-EPROM technology. The transistor count of the proposed multi-context switch (MC-switch) is reduced to 13% in comparison with SRAM-based one. The total area of the proposed MC-FPGA is reduced to about 56% of that of a conventional SRAM-based MC-FPGA.

  • CMOS Image Sensor Using Negative-Feedback Resetting to Obtain Variably Smoothed Images

    Masayuki IKEBE  Keita SAITO  

     
    PAPER

      Page(s):
    1662-1669

    We designed a CMOS image sensor capable of capturing variably smoothed images. This sensor uses a negative-feedback technique to set photodiode (PD) capacitance in the pixel circuit to any intermediate voltage during charge accumulation and it provides a neighboring-pixel operation by using their average value when resetting the PD capacitance. Smoothing-filter coefficients are changed by adjusting timing of the pixel-readout and neighboring-pixels operations. The performance of the proposed sensor was evaluated by SPICE simulation and numerical analysis.

  • A Low-Power Write Driver for Hard Disk Drives

    Tatsuya KAWASHIMO  Hiroki YAMASHITA  Masayoshi YAGYU  Fumio YUKI  

     
    LETTER

      Page(s):
    1670-1673

    This paper describes a new low-power write driver circuit for mobile hard disk drive preamplifiers. To achieve low power consumption, we developed a write driver circuit with a single-stage MOS transistor as the current driver, which both switches and controls the write current. We also developed a reflection cancellation method to suppress the distortion of the write current waveform during write transition. Fabricated using 0.35-µm SOI-BiCMOS technology, this write driver circuit consumes low power, 380 mW (at 100 MHz).

  • A Cost Effective Interconnection Network for Reconfigurable Computing Processor in Digital Signal Processing Applications

    Yeong-Kang LAI  Lien-Fei CHEN  Jian-Chou CHEN  Chun-Wei CHIU  

     
    LETTER

      Page(s):
    1674-1675

    In this paper, a novel cost effective interconnection network for two-way pipelined SIMD-based reconfigurable computing processor is proposed. Our reconfigurable computing engine is composed of the SIMD-based function units, flexible interconnection networks, and two-bank on-chip memories. In order to connect the function units, the reconfigurable network is proposed to connect all neighbors of each function unit. The proposed interconnection network is a kind of full and bidirectional connection with the data duplication to perform the data-parallelism applications efficiently. Moreover, it is a multistage network to accomplish the high flexibility and low hardware cost.

  • Regular Section
  • Error Analysis of the Multilevel Fast Multipole Algorithm

    Shinichiro OHNUKI  Weng Cho CHEW  

     
    PAPER-Electromagnetic Theory

      Page(s):
    1676-1681

    The computational error of the multilevel fast multipole algorithm is studied. The error convergence rate, achievable minimum error, and error bound are investigated for various element distributions. We will discuss the boundary between the large and small buffer cases in terms of machine precision. The needed buffer size to reach double precision accuracy will be clarified.

  • Spread-Spectrum Clock Generator for Serial ATA with Multi-Bit ΣΔ Modulator-Controlled Fractional PLL

    Masaru KOKUBO  Takashi KAWAMOTO  Takashi OSHIMA  Takayuki NOTO  Masato SUZUKI  Shigeyuki SUZUKI  Takashi HAYASAKA  Tomoaki TAKAHASHI  Jun KASAI  

     
    PAPER-Electronic Circuits

      Page(s):
    1682-1688

    We have developed a spread-spectrum Phase-Locked Loop (PLL) for serial Advanced Technology Attachment (ATA) applications. We investigated the relation between the output jitter of PLLs in serial ATA applications and ΣΔ modulators in PLLs. On the basis of this study, we developed a spread-spectrum PLL for serial ATA applications and achieved a combination of small jitter and large electromagnetic interference (EMI) peak power reduction. This was achieved using two key components: multi-bit ΣΔ-controlled PLL and voltage-controlled oscillation with cross-coupled load delay cells. Using a 0.15-µm complementary metal-oxide semiconductor process, we fabricated a complete serial ATA transceiver featuring a spread-spectrum clock generator (SSCG). We achieved a spread-spectrum PLL with 10-dB EMI reduction and 8.1 ps random jitter for use in serial ATA applications. All other measured results for SSCG performance were very good and showed that the spread-spectrum generator more than satisfies serial ATA specifications.

  • Autonomous di/dt Control of Power Supply for Margin Aware Operation

    Toru NAKURA  Makoto IKEDA  Kunihiro ASADA  

     
    PAPER-Electronic Circuits

      Page(s):
    1689-1694

    This paper demonstrates an autonomous di/dt control of power supply for margin aware operation. A di/dt on the power line is detected by a mutual inductor, the induced voltage is multiplied by Gilbert multiplier and the following low pass filter outputs a DC voltage in proportion to the di/dt. The DC voltage is compared with reference voltages, and the modes of the internal circuit is controlled depending on the comparators output. By using this scheme, the di/dt noise power can be autonomously controlled to fall within a defined range set by the reference voltages. Our experimental results show that the internal circuit oscillates between the all-active and the half-active modes, also show that the all/half ratio and the oscillation frequency changes depending on the reference voltages. It proves that our autonomous di/dt noise control scheme works as being designed.

  • Calculation of Measurement Uncertainties of Synchronously Sampled AC Signals in Nonideal Synchronization with Fundamental Frequency

    Predrag PETROVIC  

     
    PAPER-Electronic Instrumentation and Control

      Page(s):
    1695-1699

    Synchronous sampling allows alternating current (AC) quantities, such as the root mean square (RMS) values of voltage and power, to be determined with very low uncertainties (on the order of a few parts of 10-6 [1]). In this paper, a mathematical expression for estimating measurement uncertainties in nonideal synchronization with fundamental frequency AC signals is presented. The obtained results were compared with those obtained by measurements with a high-precision instrument used for measuring basic AC values.

  • Wave Absorber Formed by Arranging Cylindrical Bars at Intervals for Installing between ETC Lanes

    Kouta MATSUMOTO  Takeru OZAWA  Takuya NAKAMURA  Takahiro AOYAGI  Osamu HASHIMOTO  Takashi MIYAMOTO  

     
    LETTER-Electromagnetic Theory

      Page(s):
    1700-1703

    The wave absorber which is formed by arranging cylindrical bars periodically composed of magnetic loss material and metallic bars is proposed for improving ETC environment, and characteristics of reflection loss and shielding effect are analyzed and measured. As a result, the change of various characteristics can be confirmed quantitatively by changing the thickness of magnetic loss material covering around a metallic bar and the pitch interval between bars. Furthermore, it is clarified that reflection loss of -9 dB and shielding effect of -25 dB are obtained at 5.8 GHz when the covering thickness of material is 1.5 mm and the pitch interval is 16.0 mm. Therefore, the wave absorber formed by arranging cylindrical bars that satisfies various characteristics required for the improvement of ETC environment can be realized.

  • High Efficiency Open Collector Adaptive Bias SiGe HBT Differential Power Amplifier

    Kuei-Cheng LIN  Tsung-Yu YANG  Kuan-Yu CHEN  Hwann-Kaeo CHIOU  

     
    LETTER-Microwaves, Millimeter-Waves

      Page(s):
    1704-1707

    A high efficiency SiGe HBT differential power amplifier with an open collector adaptive bias was successfully demonstrated. A novel linearizer consists of an open collector heterojunction bipolar transistor bias circuit and an MOS feedback diode was proposed, which achieved better power added efficiency (PAE) than that of traditional adaptive bias circuits. The size effect of linearizer was investigated and the impedance ratio (R1/R2) between the linearizer and the main amplifier was optimized by the factor of 3. The measured differential power amplifier achieved an output 1-dB compression point (P1 dB) of 18.7 dBm with PAE of 31.2%, the output second order intermodulation point (OIP2) of 59 dBm, and third-order intermodulation point (OIP3) of 28 dBm. Compared to traditional adaptive bias technique, the proposed linearizer power amplifier effectively improved the PAE. The fabricated die size including pads is less than 0.925 mm2 and suitable for highly integrated linear drive amplifier.

  • Mode Converter Optimization for U-Style Rotary Joint

    Dong-Hyun KIM  Jeong-Woo JWA  Doo-Yeong YANG  

     
    LETTER-Microwaves, Millimeter-Waves

      Page(s):
    1708-1712

    This paper describes optimization of H10-to- E01 mode converter by way of a right-angle E-plane junction (RAJ) between a rectangular waveguide and a circular waveguide in a waveguide rotary joint. Requirements for the optimized mode converter are formulated to provide the conjugate matching condition and analytical formulas for the rotary joint. A novel design procedure of the mode converter is proposed. An excellent performance of the mode converter fabricated for the Ka-band rotary joint is proved by computer simulation and the experimental results. The return loss and the insertion loss rotational effect are less than -25 dB and 0.02 dB in the 10% bandwidth, respectively.

  • Passive Reduced-Order Macro-Modeling for Linear Time-Delay Interconnect Systems

    Wenliang TSENG  Chien-Nan Jimmy LIU  Chauchin SU  

     
    LETTER-Microwaves, Millimeter-Waves

      Page(s):
    1713-1718

    This paper presents a methodology based on congruent transformation for distributed interconnects described by state-space time-delays system. The proposed approach is to obtain the passive reduced order of linear time-delays system. The unified formulations are used to satisfy the passive preservation. The details of the mathematical proof and a couple of validation examples are given in this paper.

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