A color filter is the penetrable device adhering red, green, and blue organic color resists onto the surface of glass substrate for application of liquid crystal displays. It is fabricated by several technologies, including lithographic processes of coating, baking, exposing, etching, and rinsing. Inkjet printing technology has potentially implemented on the fabrication of the large-size panel with organic molecular film since this technology offers an efficient and steady production procedure. To achieve the basic specifications and requirements of high color performance, high color purity, high flatten, low reflective, and low production cost, inkjet printing technology will be seriously considered in the color filter manufacturing. Here we present the experimental results on physical and chromatic characteristics of color filters by implementing inkjet printing technology. To verify the chromatic characteristics of the resultant color filters, CIE 1931 chromaticity diagram is adopted to present the coordination of color distribution. For the green color ink, the results are x=0.30950.04, y=0.59120.04, brightness of Y=58.887 for 50 droplets and x=0.31030.04, y=0.57840.04, brightness of Y=60.328 for 41 droplets. For the blue color ink, the result is x=0.14900.04, y=0.10150.04, brightness of Y=8.808. For the red color ink, the result is x=0.5720.04, y=0.3200.04, brightness of Y=27.1.

Writing/non-writing of composite conducting polymer (polypyrrole/poly(3-hexylthiophene)) have been investigated using composite conducting polymer. Writing has been made in two processes: pretreatment and dropping ethanol. The unipolar signal (10 Vp-p, 10 Hz+5 VDC) has worked as a circuit signal. The conductivity at the path of the composite conducting polymer network has depended on the passed signal. It was confirmed using the Y-type and H-type composite conducting polymer. It has been confirmed that rewriting of composite conducting polymer is possible to develop a memory or a neural network device of conducting polymer.

Self-organized organic dye particles of micrometer and submicrometer size were prepared by utilizing a wetting/dewetting process of polar solvent on a hydrophilic glass substrate. The near-field scanning optical microscopy successfully identified near-field excited near-field fluorescence from single particles, however, the majority of the small particles with diameters around 2 µm or less did not show fluorescence under near-field observation. In contrast, far-field fluorescence, when excited by a polarized evanescent field, was observed, with the intensity depending on the excitation polarization, indicating that molecules' transition moment within dye particles was oriented parallel to the substrate surface. Single particle fluorescence spectrum consistently showed an identical sharp peak with a large redshift, indicating that the particles were composed of identical dye aggregates similar to J-aggregates. These observations suggest that the near-field at the probe tip was polarized parallel to the probe axis. Another observation, that molecules were oriented in a similar direction among adjacent particles, suggests that the dewetting process contributed to the alignment of the molecular orientation among adjacent particles, which further proves that the present specimen was formed by a self-organizing mechanism.

In situ observation of the adsorption process and reduction behavior of hemoglobin adsorbed on a bare glass surface was studied using slab optical waveguide (SOWG) spectroscopy. The peak position of the absorption band of hemoglobin adsorbed on the glass surface was almost the same as that of hemoglobin in solution. This result agrees with results previously reported by our group. The adsorbed hemoglobin molecules were also reduced by sodium dithionite solution. The adsorbed hemoglobin molecules still maintained their function in this experimental condition.

We prepared transparent polymer films doped with π-conjugated organic dyes around a multimode silica fiber and observed very narrow fluorescence peaks as compared with the fluorescence in solution. The peak position showed no dependence on the excitation wavelength, indicating that it could not be explained by a whispering gallery mode in a medium with broad optical gain. The peaks can be explained by amplified spontaneous emissions (ASE) because the intensity depended linearly on the excitation intensity with a threshold. When the dye-doped film was formed on the portion of a fiber with the clad etched out and was excited by the polarized laser propagating inside the fiber core, we observed ASE peaks not of the dyes but of the optical fiber itself, suggesting the possibility that the dyes were oriented with their transition moment pointing parallel to the film surface. These fiber ASE peaks shifted to longer wavelength when we varied the excitation wavelength to shorter wavelength, which clearly ruled out the possibility of silicate Raman scattering as the origin.

In situ observations were mainly performed by using slab optical waveguide (SOWG) spectroscopy synchronized with potential step measurements to investigate the time dependent spectral change of the adsorbed heptyl viologen cation radicals (HV^+・) in thin deposition layer on indium-tin-oxide (ITO) electrodes. Several absorption bands, which indicated a monomer and dimer of HV^+・ were co-adsorbed on ITO electrode surface with a monolayer or a few layers deposition, were observed in UV-visible region. The time dependent spectra yielded some important molecular information for the adsorption phenomena of HV^+・ on the electrode surface. All observed absorption bands disappeared completely when the electrode potential of -200 mV vs. Ag/AgCl was applied, which indicated the adsorbed HV^+・ species were electrochemically reoxidized on the ITO electrode.

We demonstrate single electron counting on an alkanethiol-protected Au nanodot in a double-barrier tunneling structure by noncontact atomic-force spectroscopy (nc-AFS). The Coulomb step width dependence on the Au nanodot diameter is observed. Evaluation of fractional charge Q₀ and contact potential difference by nc-AFS reveals a V_d-independent voltage shift due to Q₀.

Molecular aligned naphthacene thins films were fabricated using vacuum evaporation and the rubbing method. The attenuated total reflection (ATR) and emission light properties from surface plasmon (SP) excitation due to molecular luminescence were investigated for these films. The long axis of the rod-like molecule was estimated to align perpendicular to the rubbing direction. The ATR and emission light properties depended on the molecular orientation.

To clarify the carrier transport mechanism of pentacene field-effect transistors (FETs), the FET characteristics was examined in the region where the drain-source voltage V_ds is lower than the saturated voltage. The I_ds-V_ds characteristics shows the ohmic behavior in the low voltage region, whereas it shows the characteristics explained by the Maxwell-Wagner model. This result clearly indicates that carrier injection from source makes a significant contribution to the carrier transport. It was also shown that the change of I_ds-V_ds characteristics from the ohmic behavior to the Maxwell-Wagner behavior is similar with the I-V characteristics change from the ohmic to the space charge limited current behavior observed in metal-organic film-metal junctions, including metal-pentacene-metal.

A well-defined test structure of organic static-induction transistor (SIT) having regularly sized nano-apertures in the gate electrode has been fabricated by colloidal lithography using 130-nm-diameter polystyrene spheres as shadow masks during vacuum deposition. Transistor characteristics of individual nano-apertures, namely 'nano-SIT,' have been measured using a conductive atomic-force-microscope (AFM) probe as a movable source electrode. Position of the source electrode is found to be more important to increase current on/off ratio than the distance between source and gate electrodes. Experimentally obtained maximum on/off ratio was 710 (at V_DS = -4 V, V_GS = 0 and 2 V) when a source electrode was fixed at the edge of gate aperture. The characteristics have been then analyzed using semiconductor device simulation by employing a strongly non-linear carrier mobility model in the CuPc layer. From device simulation, source current is found to be modulated not only by a saddle point potential in the gate aperture area but also by a pinch-off effect near the source electrode. According to the obtained results, a modified structure of organic SIT and an adequate acceptor concentration is proposed. On/off ratio of the modified organic SIT is expected to be 100 times larger than that of a conventional one.

We succeeded to fabricate p-n heterojunction and bulkheterojunction small-molecular-weight organic thin-film solar cells by combination of dry (p-type = zinc phthalocyanine, n-type = fullerene) and wet (p-type = tetra-tert-butyl zinc phthalocyanine, n-type = [6,6]-phenyl-C61-buteric acid methyl ester) processes. Relationship between morphologies of semiconducting layers and photovoltaic properties was investigated. The p-n heterojunction organic thin-film solar cells based on dry process, where surface roughness was approximately 2 nm, showed the highest power conversion efficiency of 1.3% in this paper.

It has been shown that the maskless dye-diffusion technique is applicable to a conjugated polymer poly(9,9-dioctylfluorene). The introduction of Coumarin 6 and Nile red results in green and white emission, with the increased onset voltage for the both cases. It has also been confirmed that the heat treatment effect during the maskless dye diffusion technique results in not the increase but the decrease of the onset voltage, indicating that the dye plays a role of carrier trap in the polymer.

Organic static induction transistors (OSITs) with vertical structure have advantage of lower operational voltage compared to the organic field effect transistors with conventional lateral structure. In this study, OSITs based on pentacene films were applied to fabricate the organic inverters which can operate at low voltage. The experimental results demonstrate that organic inverters based on the OSITs show basic transfer characteristics and a low operational voltage of 2 V.

Organic field-effect transistors (OFETs) based on a composite with the same thiophene backbone were fabricated by spin coating using an annealing solution of poly(3-hexylthiophene) (PAT6) and α, ω-dihexylsexithiophene (DH-6T). The morphology of grains on the non-octadecyltrichlorosilane (OTS) treated and OTS treated gate insulators is granular and tube-like, respectively. The different morphologies of the OFETs with non-OTS treated and OTS-treated gate insulators result in the improvement of field-effect mobility. In the case of poly(ethylene naphthalate) substrate, an OFET with an 89 wt% DH-6T composite corresponding to two molecules of DH-6T per hexylthiophene repeating unit had a carrier mobility of 0.019 cm²/Vs.

An electron transfer mediated amperometric enzyme biosensor based on a plasma-polymerized thin film of dimethylaminomethylferrocene (DMAMFc) is reported. A nanoscale thin polymer film containing a redox mediator was plasma-deposited directly onto an electrode with physisorbed glucose oxidase (GOD). Since the redox sites were introduced in the vicinity of the reaction centers of GOD, a highly efficient electron transfer system was formed in which almost all the reaction centers of GOD were connected to redox sites of the polymer matrix. The advantages of this strategy were: no need for prior or further chemical modification of the enzyme molecules, and simplicity of design compared with the use of a conventional polymer matrix. Moreover, the fact that the film deposition was performed using a microfabrication-compatible organic plasma promised great potential for high-throughput production of bioelectronic devices.

We succeeded in isolating two formaldehyde-degrading fungi, the strains BDF001 and 002, from the rhizospheric soil of formaldehyde-exposed potted golden pothos (Epipremnum aureum), and from the formaldehyde-exposed cultivation soil without plants, respectively. Sequence analysis of the ITS-5.8S rDNA regions confirmed that both fungi were of the same species, Trichoderma virens. These two strains, however, obviously differed from each other in formaldehyde resistance and formaldehyde-degrading ability. The formaldehyde concentration allowing a growth during cultivation for 10 days for the strain BDF001 was up to 0.6%, and that for the strain BDF002 was up to 0.35%. The strain BDF001 showed a formaldehyde-degrading activity 2.3 times higher than that of the strain BDF002. Ranges of the possible growth pH and temperature in the presence of 0.21% formaldehyde were between 4 and 9, and around 25, respectively.

A novel sensing system for glucose in aqueous solution based on cataluminescence(CTL) is proposed. CTL is a kind of chemiluminescence emitted in a course of catalytic oxidation of combustible substances. A sensing system consisting of a CTL-based chemical-sensor made of the γ-Al₂O₃ catalyst activated with Tb and an ultrasonic nebulizer is developed. CTL is emitted by injection of air containing mist of a glucose solution prepared by the nebulizer on the catalyst. The CTL intensity measured by a photomultiplier is reproducible for the repeated injection of the mist, and the system can measure glucose concentration in a range of 1-200 mg/dl.

This paper presents an advanced and extensive utilization approach of microwave resonant fields, and the applications to push-push oscillators and reconfigurable planar antennas. The excellent coherency, synchronous harmonics and the degenerative orthogonal modes of electromagnetic field built up on microwave resonators are noticeable features in this approach. Another crucial point is the resonant field controllability that is especially essential feature for reconfigurable antennas in this paper. All the features can be realized by embedding semiconductor devices and/or IC's on a microwave resonator. Push-push oscillators and reconfigurable planar antennas are described as good examples of this approach. The push-push oscillators can generate very higher frequency signals due to the selective use of the 4th harmonic up to the 8th harmonic resonant fields, suppressing undesired harmonic signals. As a result, very high frequency band oscillators up to millimeter-wave bands with good suppression of undesired harmonic signals can be easily realized at very low cost by use of commercially available active devices for low frequency bands. The reconfigurable planar antennas are also demonstrated, where the boundary condition of the resonant field on planar antennas can be purposefully controlled to realize reconfigurable antenna performances by the semiconductor devices embedded on the patch as well. The orthogonal linear polarization controllable patch, the dual-band switching patch and the continuously frequency controllable patch have been demonstrated as the successful applications of this approach.

This paper overviews the history of a class of varactor tuned bandpass filters. Since the miniaturization as well as the high performance of the tunable bandpass filters is required for the next generation mobile communication systems, the discussion is focused on the various planar type tunable filters including active configurations. Brief design concepts of various tunable filter configurations as well as their characteristics are discussed.

An InGaP/GaAs HBT MMIC amplifier with an active balun has been developed for ultra-wideband radio systems (UWB). The MMIC was designed to drive a self-complementary antenna with a balanced mode, where an input impedance is 60π ohms. The MMIC consists of a common mode negative feed back ultra-wideband amplifier circuit, an active balun circuit, and a high impedance drive circuit. The developed amplifier provides a 3-dB gain roll-off bandwidth from 2.4 GHz to 10.8 GHz with a 14.1-dB linear power gain, and a linear power output up to 3 dBm. The developed amplifier with the active balun provides a 3-dB gain roll-off bandwidth from 2.3 GHz to 8.6 GHz with a 21.3-dB power gain in a balanced mode, and a linear power output up to 0.6 dBm. The measured total group delay is less than 32 psec. Output signals at the balanced output terminals of the MMIC were kept inverted with a steep pulse shape for an impulse input signal of 57-psec pulse width.

An even harmonic quadrature mixer (EH-QMIX) with a balanced configuration is proposed for a direct conversion receiver. The unit even harmonic mixer (EHMIX) used for I/Q paths consists of two anti parallel diode pairs (APDPs) and a pair of diplexers. When the second harmonic of LO (2LO) from the LO section is applied to the LO port as a spurious component, a conventional single-ended EHMIX using APDP converts the 2LO leakage from the LO section into the baseband and the d.c. offset and the self-detected LO noise arise at the baseband degrade the sensitivity. This proposed balanced EHMIX configuration can cancel out the 2LO leakage in itself. Therefore, the d.c. offset and the LO noise are significantly suppressed and the degradation of the sensitivity can be avoided. The suppression characteristic of the d.c. offset and the LO noise are verified by the simulation and the measurements. By using this balanced configuration, the fabricated EH-QMIX achieves wider frequency band characteristic than that of the single-ended EH-QMIX, and it shows 20% relative bandwidth at L-band.

This paper presents novel phase-continuous frequency hopping (FH) control for a direct frequency synthesizer (DFS) using a quadrature mixer driven by two direct digital synthesizers (DDSs). To achieve wideband FH in both of the lower and the upper sidebands of a local frequency in a quadrature mixer, the proposed DFS decreases or increases the phase of DDS output signals corresponding to frequency offset from a local frequency of the quadrature mixer. To realize phase decrement, the proposed method adds a complement number in a phase accumulator of a DDS, while a conventional DDS does not use phase decrement but uses a switchable combiner. In addition, as the phase accumulator output changes continuously by summing phase increment, the proposed method always assures phase continuity of a DFS output signal, which ends up suppressing sidelobe level of frequency hopped signals. The calculation and measurement results indicate that a sidelobe of a signal spectrum using the proposed phase continuous method is approximately 10 dB better than that using a conventional phase discontinuous method.

We derived explicit formulas for evaluating the error vector magnitude (EVM) from the amplitude distortion (AM-AM) and phase distortion (AM-PM) of power amplifiers (PAs) in orthogonal frequency-division multiplexing (OFDM) systems, such as the IEEE 802.11a/g wireless local area networks (WLANs) standards. We demonstrated that the developed formulas allowed EVM simulation of a memoryless PA using only a single-tone response (i.e. without OFDM modulation and demodulation), thus enabling us to easily simulate the EVM using a harmonic-balance (HB) simulator. This HB simulation technique reduced the processing time required to simulate the EVM of a PA for the IEEE 802.11a standard by a factor of ten compared to a system-level (SL) simulation. We also demonstrated that the measured EVM of a PA module for the IEEE 802.11g could accurately be predicted by applying the measured static AM-AM and AM-PM characteristics to the derived formulas.

In the design of an active integrated antenna, it is necessary to analyze problems such as unwanted emissions or mutual coupling between elements. In this paper, we clarify the problems in implementing S-parameters for an FDTD analysis. Cubic spline interpolation is suitable for the construction of the S-parameter data. The implementation methods of terminal resistors and vias are examined. The proposed FDTD analysis becomes stable after correcting the discrete time lag in the formation of the incident wave. The validity of the proposed method is verified in its application to the low pass filter and the frequency tunable band pass filter.

A novel structure of bandpass filter using NRD guide E-plane resonators is proposed. The NRD guide E-plane resonator is constructed by inserting metal foils in the E-plane of NRD guide. Simulation, fabrication and handling of the filter are very easy because each resonator is separated by simple metal foils. Chebyshev response bandpass filters are designed based on the theory of direct-coupled resonator filters and fabricated at 60 GHz. Simulated and measured filter performances agreed well with the design specifications. Insertion losses of the fabricated filters were found to be around 0.3 dB for 3-pole filter and 0.5 dB for 5-pole bandpass filter, respectively.

A novel wideband bandpass filter with improved stopband characteristics is presented in this paper. Dual-mode square ring resonator is used in the proposed filter. New formulas based on the even- and odd-mode analysis are derived to facilitate the design of transmission zeros of the square ring resonator. A short-circuited stub and a piece of aperture-enhanced parallel-coupled lines are introduced to the input and output of the resonator to lower the passband return loss and widen the stopband of the filter significantly. The filter has a 50% fractional bandwidth, is compact in configuration, and shows remarkably improved performance compared with previously reported filters of the same kind. The measured filtering response shows a good agreement with the simulated result.

This paper proposes a new microstrip stepped-impedance resonator (SIR) used for bandpass filters with reduced size and improved stopband characteristics. A comprehensive treatment of both ends of the resonator with loaded triangular and rectangular microstrips is described. The design concept is demonstrated by two filter examples including four-resonator parallel-coupled Chebyshev bandpass and compact four-resonator cross-coupled elliptic-type filters. These filters are not only compact size due to the slow-wave effect, but also have a wider upper stopband resulting from the resonator bandstop characteristic. The filter designs are described in details. The simulated and experimental results are demonstrated and discussed.

A new transmission line structure is presented in this work for advanced CMOS processes. This structure has a high quality factor and low attenuation. It allows slow-waves to propagate which results in low dispersion for a given characteristic impedance. It is also designed to satisfy the stringent density requirements of advanced CMOS processes. A model is developed to characterize this structure by analyzing the physical current flowing in the substrate and the shield structure. Test structures were fabricated using CMOS 90 nm process technology with measurements made up to 110 GHz using a transmission-reflection module on a network analyzer. The results correspond well to the proposed model.

This paper presents the design, fabrication and characterization of a low actuation voltage capacitive shunt RF-MEMS switch for microwave and millimeter-wave applications based on a corrugated electrostatic actuated bridge suspended over a concave structure of coplanar waveguide (CPW), with sputtered nickel as the structural material for the bridge and gold for CPW line, fabricated on high-resistivity silicon (HRS) substrate using IC compatible processes for modular integration in a communication devices. The residual stress is very low because having both ends corrugated structure of the bridge in concave structure. The residual stress is calculated about 3-15 MPa in corrugated bridge and 30 MPa in flat bridge. The corrugated bridge of the concave structure requires lower actuation voltages 20-80 V than 50-100 V of the flat bridge of the planar structure in 0.3 to 1.0 µm thick Ni capacitive shunt RF-MEMS switch, in insertion loss 1.0 dB, return loss 12 dB, power loss 10 dB and isolation 28 dB from 0.5 up to 40 GHz. The residual stress of the bridge material and structure is critical to lower the actuation voltage.

Recently, spiral inductors have widely been used instead of resistors in the design of matching circuits to enhance the thermal noise performance of a wireless transceiver. However, such elements usually have low quality factor (Q) and may encounter the self-resonance in microwave-frequency band which permits its use in higher frequencies, and on the other hand, they occupy the large on-chip space. This paper presents a new design theory for the impedance-matching circuits for a single-chip SiGe BiCMOS receiver front-end for 2.4 GHz-band wireless LAN (IEEE 802.11b). The presented matching circuits are composed of conductor-backed coplanar waveguide (CPW) meander-line resonators and impedance (K) inverter. The prototype front-end receiver is designed, fabricated and tested. A few of the measured results to verify the design theory are presented.

This paper presents novel multi-band equilateral triangular microstrip antennas (ET-MSAs) fed by an L-shaped feeding probe. Two types of the ET-MSA are proposed in this paper; they are ET-MSA with closed folded slots and open folded slots with an embedded bridge. The antenna prototypes presented in this paper assume four folded slots in which a metal strip is inserted to realize a good multi-band performance. In addition, the open folded slots, in which the metal strip inside the folded slot is connected to the ET-MSA by the embedded metal bridge, leads to miniaturize the antenna. The proposed antennas are printed on the top layer of a PTFE substrate while the L-probe is printed on the bottom one. The L-shaped probe is utilized due to its tremendous performance in providing a wideband impedance matching. Five resonant frequencies of the ET-MSAs with closed folded slots and with open folded slots are predicted by the electromagnetic simulator (IE3D) based on the method of moment, respectively. Some parametric studies have been also investigated to meet an appropriate multi-band performance. A broadside radiation pattern and gain of 3.0-7.0 dBi have been confirmed by the measurement for the entire observed frequencies. Measured results agree well with the prediction. Thus, these antenna systems are demonstrated to be useful models for a multi-band planar antenna.

A novel two-dimensional (2D) beam scanning antenna array using composite right/left-handed (CRLH) leaky-wave antennas (LWAs) is proposed. The antenna array consists of a set of CRLH LWAs and a Butler matrix (BM) feeding network. The direction of the beam can be scanned two-dimensionally in one plane by changing frequency and in the other plane by switching the input ports of the BM. A four-element antenna array in the microstrip line configuration operating at 10.5 GHz is designed with the assistance of full-wave simulations based on the method of moment (MoM) and the finite-element method (FEM). The antenna array is fabricated and radiation characteristics are measured. The wide range 2D beam scanning operation with the angle from -30 deg to +25 deg in one plane by sweeping frequency from 10.25 GHz to 10.7 GHz and with four discrete angles of -46 deg, -15 deg, +10 deg, and +35 deg in the other plane by switching the input port is achieved.

Frequency-variation method (FVM), reported in [1], was further studied for simultaneously measuring the both complex permittivity and complex permeability by intentionally changing the test frequency to obtain different reflections. An enhanced coaxial-probe-based in-situ measurement system has been established. The spectral domain full-wave model is derived to take place of the quasi-static one. A novel coaxial probe is designed so that the one-port calibration could be performed with Agilent-supplied precise cal-kit instead of the liquid standard. Criterions for a right order of the interpolation polynomial used to approximate the frequency-dependent EM parameters; measures to reduce the residual mismatch errors and random error in reflection measurements and to suppress the ambiguities in solving the transcendent equation system were experimentally studied to resolve the problems and improve the accuracy in dispersive absorbing materials' test. Several typical dispersive absorbing coatings have been tested via FVM. The good comparison between the measured results and reference ones validate the feasibility of the proposed improved technique.

The Evolutionary Electronics refers to the design method of electronic circuits with the help of Evolutionary Algorithms. Over the years huge experience has been accumulated and tremendous results have been achieved in this field. Two obvious tendencies are prevailing in the area over designers to improve the performance of Evolutionary Algorithms. First of all, as with any solution-search-algorithm, the designers try to reduce the potential solution space in order to reach the optimum solution faster, putting some constrains onto search algorithm as well as onto potential solutions. At the same time, the second tendency of unconstraining the Evolutionary Algorithms in its search gives unpredictable breakthroughs in results. Enabling the evolution to optimize with more experimental parameters devoted to drive the evolution and adjusted previously manually, is one of an example where such kind of unconstraining takes place. The evolution with the maximum freedom of search can be addressed as unconstrained evolution. The unconstrained evolution has already been applied in the past towards the design of digital circuits, and extraordinary results have been obtained, including generation of circuits with smaller number of electronic components. Recently, the similar method has been introduced by authors of this paper towards the design of analogue circuits. The new algorithm has produced promising results in terms of quality of the circuits evolved and evolutionary resources required. It differed from constrained method by its simplicity and represented one of the first attempts to apply Evolutionary Strategy towards the analogue circuit design. In this paper both conventional constrained evolution and newly developed unconstrained evolution in analogue domain are compared in detail on the example of "LC" low-pass filter design. The unconstrained evolution demonstrates the superior behaviour over the constrained one and exceeds by quality of results the best filter evolved previously by 240%. The experimental results are presented along with detailed analysis. Also, the obtained results are compared in details with low-pass filters designed previously.

One full search variable block size motion estimation (VBSME) architecture with integer pixel accuracy is proposed in this paper. This proposed architecture has following features: (1) Through widening data path from the search area memories, m processing element groups (PEG) could be scheduled to work in parallel and fully utilized, where m is a factor of sixteen. Each PEG has sixteen processing elements (PE) and just costs 8.5K gates. This feature provides users more flexibility to make tradeoff between the hardware cost and the performance. (2) Based on pipelining and multi-cycle data path techniques, this architecture can work at high clock frequency. (3) The memory partition number is greatly reduced. When sixteen PEGs are adopted, only two memory partitions are required for the search area data storage. Therefore, both the system hardware cost and power consumption can be saved. A 16-PEG design with 4832 search range has been implemented with TSMC 0.18 µm CMOS technology. In typical work conditions, its maximum clock frequency is 261 MHz. Compared with the previous 2-D architecture [9], about 13.4% hardware cost and 5.7% power consumption can be saved.

The present paper proposes a novel cache architecture, called SCache, to detect buffer overflow attacks at run time. In addition, we evaluate the energy-security efficiency of the proposed architecture. On a return-address store, SCache generates one or more copies of the return address value and saves them as read only in the cache area. The number of copies generated strongly affects both energy consumption and vulnerability. When the return address is loaded (or popped), the cache compares the value loaded from the memory stack with the corresponding copy existing in the cache. If they are not the same, then return-address corruption has occurred. In the present study, the proposed approach is shown to protect more than 99.5% of return-address loads from the threat of buffer overflow attacks, while increasing the total cache-energy consumption by, at worst, approximately 23%, compared to a well-known low-power cache. Furthermore, we explore the tradeoff between energy consumption and security, and our experimental results show that an energy-aware SCache model provides relatively higher security with only a 10% increase in energy consumption.

A new 4B5B block inversion coding is proposed for dc-balanced transmission in high-speed optical parallel links. An 8-bit byte is partitioned into two 4-bit data and converted to two 5-bit blocks by an inversion encoding. The proposed coding greatly reduces circuit complexity with the minimum latency overhead of one clock for the encoder and none for the decoder. The maximum run length is 11.

In H.264, the context-based adaptive variable length coding (CAVLC) is used for lossless compression. Direct table-lookup implementation requires higher cost because it employs a larger memory to produce the encoded results. In this letter, we present a more efficient technique for CAVLC implementation. Compared with those previous CAVLC chips, our design requires the lowest hardware cost.

In this paper a new approach for employing the digital signal processing capabilities in the design of the multi-bit continuous time (CT) Delta Sigma modulators (DSM's) is presented. It proposes the discrete time (DT) pre-filtering before the DAC for solving the known problems of the CT DSM's.

This paper proposes a compact interpolation scheme dedicated to a 1-dimensional position sensitive detector (PSD) with an optical sensing pixel array. The pixels are divided into even- and odd-numbered groups and winner take all (WTA) circuits are provided to each of the groups. The simulated results show that the detecting step-width is reduced to the half of the original one after applying the interpolation scheme.