The dependence of resistivity of phosphorus doped poly-Si films on annealing temperature varies with doping concentration. This phenomenon can be explained by the segregation of dopant atoms to the grain boundaries in the films.

By using a strong oxidizing agent in liquid phase, more than 7 nm-thick silicon dioxide has been grown thermally in a single-crystal silicon substrate at 252 within 8 hrs under normal-pressure conditions. The oxidation characteristics have been presented. Its application to amorphous silicon MOS transistors has been also described. The field-effect mobility of the transistor was more than 0.22 cm²/Vs.

Emitter crowding effect and emitter Gummel number of amorphous SiC: H emitter HBT have been investigated. Collector current density has been remarkably enhanced by narrowing the emitter stripe width. The emitter Gummel number has been estimated as high as 210¹⁴s/cm⁴.

A new threshold voltage formula is derived for a U-shaped gate MOSFET where the gate oxide becomes thicker at both channel ends. It is found that when charge-sharing effect due to source/drain-junctions is not accounted for, threshold voltage increases with decreasing channel length, exhibiting an inverse short-channel effect (ISCE). When charge-sharing effect is taken into account, the ISCE reduces remarkably, resulting in a flat threshold voltage characteristic over a wide range of channel lengths. Computer simulations using a two-dimensional device simulator show a good agreement with these analytical findings.

Resistive field plates achieve high breakdown voltage when merged with an ordinary metal field plate. The optimum design of the structure was studied by a two dimensional device model and experiments. It was found that a properly combined structure realizes not only a higher breakdown voltage for shallow junctions but also a higher area efficiency, compared with conventional guard ring technologies.

Hot carrier effects in narrow-channel MOSETs are investigated. With decreasing channel width below 1µm, the ratio of substrate to channel currents show marked increase. By using the newly developed full three-dimensional process/device simulation system, two significant causes of the hot carrier effects are clarified.

This letter describes the program structure and performance toward a newly developed VLSI circuit simulator, called SUPER-SPICE. In the SUPER-SPICE program, the waveform relaxation method is implemented. A small circuit analyzer is based on SPICE2. Therefore, with attention paid to simulation modes, not only transient analysis, but also DC and DC transfer curves, can be simulated by the simulator. Further, many kinds of nonlinear device models in SPICE2 are permitted to be used for VLSI circuit simulation.

A High performance digital filter LSI has been developed, which is suitable for two- or three-dimensional TV video signal processing. This 9th-order symmetrical transversal filter features high speed operation of 33 MHz. Moreover, the order and the transfer function of the filter are alterable. The chip, achieved through 2 µm CMOS technology, occupies about 50 mm² and consumes less than 600 mW of power at a clock frequency of 33 MHz.

Influence of the resistance of the ground line in D/A converter has been analyzed. The resistance produces a significant linearity error if a conventional switching sequence is used. The proposed new compensation technique named symmetrical switching reduces the error to 25 %.

Binary code representation successfully reducing device count for radix-2 Signed-Digit arithmetic has been proposed and an adder using this binary code has been designed. Delay time of addition is estimated at 5.5 ns regardless of digit length using 1.2 µm CMOS technology. The occupied area is almost the same compared with CLA.

A 16 bit parallel parallel multiplier is developed by using LCML macrocell circuit design and an improved SST macrocell array with a 0.35 µm emitter width. This multiplier consists of carry-save and carry-lookahead adders. A 6 ns multiplication time is achieved 1.93 W/chip.

On-chip testing for 30 K-gate masterslice with freely configured SRAM AND/OR ROM blocks was investigated. Multiplier fault coverage was about 93 percent. The validity of on-chip testing was confirmed in masterslices containing over 20 K gates with memory blocks.

A new reference voltage generator for megabit DRAMs is proposed. The supply voltage dependence of the generator is successfully suppressed in comparison with the conventional reference voltage circuit. It is shown that the V_cc Margin of DRAM operation can be noticeably improved by using this generator.

A new memory cell array structure for high density DRAMs is proposed. This new structure is superior to both conventional open bit line and folded bit line structures when the use of isolation merged trench cells, such as FC cell, are considered. The application of this structure to a 16 M bit DRAM cell array design will be also discussed.

A 1024 pixel, 14µm pitch, high resolution linear infrared CCD image sensor is developed, especially for remote sensing use. Using a PtSi/Si Schottky barrier instead of a conventional Pd₂Si/Si Schottky barrier, middle and short wavelength infrared image can be taken. The power consumption by an on-chip amplifier is only 7 mW, which is suitable for satellite application.

Direct observation of ZnSe-ZnTe strained layer superlattice was performed by Transmission Electron Microscopy for the first time. The long periodicity of the superlattice was confirmed by the satellite spots of Transmission Electron Diffraction. The bright field TEM image directly indicated the superlattice structure without large scale misfit dislocations.

A numerical model for AlGaAs/GaAs HBT's is proposed in which the transport of electron energy is included by using hydrodynamic equation derived from the Boltzmann equation. The results are compared with those by the conventional model, indicating the importance of the energy transport effects.

The switching performance of the collector top AlGaAs/GaAs heterojunction bipolar transistor (HBT) has been investigated by simulating the operation of single-stage inverters, five-stage ring oscillators, and 1/4 frequency dividers including the comparison between the collector-top HBT and the standard emitter-top-HBT.

The effects of current gain and emitter resistance on the switching performance of ECL gates with GaAs/AlGaAs HBTs are analyzed by circuit simulation. A minimum current gain of 10 and a maximum emitter resistance of less than one fifth of the load resistance were found to be necessary for stable ECL inverter operation.

A new gate current model for the AlGaAs/GaAs heterostructure MISFETs is proposed. This model is derived by taking account of the relationship between the surface potential at the hetero-interface and the gate voltage. The new gate current model is shown to be suitable for analyzing logic circuits with heterostructure MISFETs.

The gate-bias dependence of the noise spectrum of GaAs MESFET was investigated. A variation in the slope of the noise spectrum was observed with the increase of the gate-bias voltage. The contributions of the 1/ noise and white noise were determined.

0.25-µm gate low-noise high electron mobility transistors (HEMTs) have been developed, using epitaxial wafers grown by metal-organic-chemical vapour deposition (MOCVD) technique. Minimum noise figures of 0.75 dB and 1.2 dB with associated gains of 11.1 dB and 7.9 dB are obtained at 12 GHz and 18 GHz, respectively, at room temperature. These are the lowest noise figures yet reported for low-noise HEMTs fabricated on MOCVD epitaxial wafers.

A GaAs monolithic high-frequency modulator IC which provides an efficient suppression of the RIN of a laser diode under application of the high-frequency power to the diode is reported. The oscillation frequency and the output power of the IC are designed to be 800 MHz and 15 dBm, respectively. Use of the IC permitted suppression of the RIN of the laser diode by almost 10 dB/Hz.

The high speed and low power GaAs LSI is developed for application to a Giga bit rate digital data switching system using Low Power Source Coupled FET Logic. This LSI has functions of multiplexing, demultiplexing, frame pulse generation and three-stage counting. Eight and four bits operations over 1.3 Gbit/s data rate with less than 0.75 W power dissipation are achieved.

A high speed GaAs 8 b ALU has been developed for application to video data processing. The ALU was designed using LSCFL and fabricated with 0.5µm BP-SAINT FETs. Very high speed operation of 1.2 ns critical path delay time corresponding to 84 ps/gate was obtained.

From the analysis of layer number dependence of response time and current gain, there is a tendency that with decreasing layer number, response time becomes higher and current gain becomes larger. The current gain band-width product , is estimated theoretically to be 640 GHz (current gain is to be 34), when metal layer number is one and layer thickness is 10 Å.

A line integral expression is derived for the Fraunhofer diffraction field of a plane wave from a sequence of arbitrary shape apertures. In the case of two polygonal apertures the analytical expression is given.

A general and rigorous theory is developed to analyse electromagnetic fields in a domain where a set of parallel plates of conductor of arbitrary shape and of finite dimensions are presented. Based on the theory, a numerical method is also given, which is very useful in solving various practical problems.

An analysis of the E-type plane wave scattering by a dielectric cylinder based on the charge simulation method is given. Numerical examples show that it gives a very good result if the position of singularities of the approximate solution is fixed by making use of the conformal mapping.

Scattering of a three-dimensional Hermite-Gaussian beam mode by a dielectric circular cylinder at normal incidence is considered by using the complex-source-point method. The scattered fields are examined numerically for a lowest-order mode.

A low-loss polarization-selective grating with a symmetrical double structure is proposed for wider frequency band use. Theoretical transmission loss is smaller than 0.025 dB in the frequency band of 0.6551.185 which is twice as wide as the previously reported one.

A new approach to wave problem in many scatterers is presented. The coherent wave is expressed in the case of random dislocation of periodically distributed scatterers and gives some reasonable results.

A 20 GHz band monolithic low noise amplifier combining improved SAINT-FET technology and optimized circuit design has been developed. The amplifier has a measured noise figure of less than 3.5 dB with a minimum gain of 4.2 dB over the 18.5 GHz to 20 GHz range. The optimal noise figure is 2.9 dB with a gain of 5.5 dB at 19 GHz. Standard threshold-voltage deviation of the process monitor FRTs is only 70 mV over the entire area of the 2-inch wafer.

A circuit configuration suitable for MMIC's (Monolithic Microwave Integrated Circuit) has been proposed. It is Planar MMIC possessing slotlines, coplanar waveguides etc. on the upper side of the substrate. Novel Planar MMIC hybrid circuits have been fabricated and tested at 26 GHz band.

A novel type of NRD-guide PIN switch is developed for millimeter wave use. An emphasis is place on the design of a compact rigid and reliable diode mount structure. The fabricated switch exhibits 1.5 to 2.0 dB insertion loss and more than 25 dB isolation over 2 GHz bandwidth at center frequency of 35 GHz.

This letter describes a novel coupled-transmission-line directional coupler using an asymmetrical suspended stripline with unequal conducting strips on both sides of a dielectric substrate. The directional coupler has a rang of coupling values from 5 to 9 dB which is difficult to be realized by a conventional symmetrical suspended stripline coupler.

The unloaded Q,Q_u of the TE₀₁ mode for a dielectric rod resonator encased within a cavity is accurately computed for dielectric constant of 24 at 11.9 GHz. Q_u10⁵ is obtained for loss tangent tan =0. HighQ resonators having Q_u23,000 are realized using new BMT ceramics (tan4.210⁵).

The reflection and transmission characteristics at an abrupt step discontinuity in the rectangular dielectric waveguide are analysed by using Double Fourier transformation. This analytical method is particularly effective when the step discontinuity is large.

In this letter, the results of a theoretical and experimental study on the polarization of reflected waves from an anisotropic sheet and relevant reflection loss are shown. Formulations and techniques developed are expected to be applied to the design of wave absorbers that use anisotropy.

A new optical fiber cable network, Dynamic-Loop Cable Network consisting of control-nodes and loop lines, is proposed. The optimum ratio of route decentralizing and the design of cable size in this network are shown theoretically.

We propose a problem of a highly reliable subscriber transmission line network by the graph theory and solve the problem. By using the theory, we present a construction method for realizing the highly reliable network.

A 1.3 µm edge-emitting LED is used to launch an average optical power of 13.7 dBm into single-mode fibers. This permits analog video signal transmission over a distance of 42 km with a loss margin of 5 dB. No degradations of DG, DP, and signal-to-noise ratio have been observed.

The hybrid integration of light sources and a photodetector with high-silica channel waveguides on a silicon substrate was successfully demonstrated for optical transmitting-receiving module use. The loss characteristics were experimentally examined and its individual losses were investigated in detail based upon theoretical and experimental results.

A DIP type single mode fiber laser diode module assembled by high reliable laser welding process has been developed. The coupling efficiency of this module is 4.7 dB and any degradation has not been recognized after long time heat cycle test.

This letter proposes a new optical cable which can be manufactured in a single process. The basic structural design has been made in view of an excess fiber length ratio to the cable length. The fabricated cable has exhibited sufficient transmission and mechanical characteristics.

This letter proposes a cylindrical accommodation block consisting of a number of plastic sheets placed radially. The basic structural design of the block has been made, and it is found that more than 1000-fiber splices, i.e. mass-splices of 200 fiber ribbons can be accommodated with the same size as the existing metallic cable joints.

This letter proposes a new type of the slack fiber accommodation block composed of book-shaped plastic sheets. The block, capable of accommodating 800-fiber splices, exhibits good transmission characteristics with an average slack fiber accommodation loss of 0.33 dB, which is smaller by 25% than the value attained for the previous type accommodation block.

The hollow cathode He-Cd⁺ laser that was improved from a flute type was investigated experimentally. The total output power of 103 mW was obtained in three colors simultaneous oscillation at 1.4 A input power, using 43 cm length and 4 mm inner diameter cathode. The conversion efficiency of 0.010.02% was obtained.

This letter reports a white light laser operation obtained with a most short (46 cm) electrode of the concentric cylindrical type structure of which the dimensions have been properly determined under quantitative consideration for some design parameters in hollow cathode geometry.

This letter reports the estimation for the decay rates of _ab and _a in a 758.8 nm He-Zn laser under the actual lasing condition. The values of _ab and _a are estimated to be 195 MHz and 145 MHz, respectively at He pressure of 9.0 Torr.

The fiber type dye laser composed by modulating a commercial grade plastic fiber has been studied. One is the active clad type and the other is the coupling waveguide type. These active fiber pumped by a pulsed N₂ laser generate the intense emission of the superradiant mode with the spectrum width of 35 nm.

In this letter, to improve the beam quality of the thin film energy transfer dye laser (thin film ETDL), DFB oscillator-amplifier system of it has been studied. This system is simply constracted on the one prism and operates as a compact solid dye laser under N₂ laser pumping.

InGaAsP/GaAs_0.7P_0.3 stripe geometry DH visible laser diodes having a p-type cap layer are fabricated. The advantage of the use of GaAs_0.7P_0.3 substrate instead of GaAs_0.6P_0.4 is discussed in terms of the injected carrier distribution ratio in direct valley (Γ) to X and L valleys. The fabricated diodes operate at room temperature under pulsed-condition. Minimum threshold current density is 4.5 kA/cm² at a lasing wavelength of 663.0 nm.

Room temperature cw operation of transverse mode stabilized 680-nm InGaAIP laser diodes have been achieved for the first time. A self-aligned structure was fabricated by two-step metalorganic chemical vapor deposition, which included the selective growth technique.

The threshold current I_th of a 1.5 µm range InGaAsP/InP λ/4-shifted DFB laser with low-reflectivity ends was theoretically expected to be 10 mA or less. Experimentally, I_th of 14-16 mA at 20 and the sub-mode suppression ratio of about 35 dB or more in the temperature range of 10-70 were obtained.

The corrugated waveguide parameters and the threshold current densities of the TE and TM modes in InGaAsP/InP λ/4-shifted DFB lasers with non-reflective ends were calculated and the TE/TM ratio over 30 dB was expected. The experimental TE/TM ratios of about 35 dB in a directly modulated condition were shown.

An array of monolithically integrated composite-cavity lasers which has been fabricated on the basis of the chemical etching technique is reported. Each composite-cavity laser consists of a laser and an external reflector, and the reflector is used also as a photodetector. The array is designed so that each laser can be operated independently of the other for parallel processing of optical data with high stability operation and independent monitoring capability. Experimental devices have been successfully fabricated.

The dynamic spectral broadening factor of an InGaAsP/InP electroabsorption light modulator has been characterized from optical power spectra under large-signal sinusoidal modulation. The value decreased with increasing an operating electric field in the modulator. The estimated value for full modulation was 2.3.

A surface-emitting-type optical gate device is proposed. The device is designed to operate both by a forward bias and a reverse bias alternatively to attain a high extinction ratio. The operation is analyzed by using rate equations. Also as a primary experiment a transmission loss was measured.

The scale factor temperature dependences of three important optical parts of phase modulation type optical fiber gyroscope, sensing coil, phase modulator and fiber coupler are described. Contribution of each part to the total temperature property is comparable. For each part, more than 5% of scale factor change per 1 is observed in the region from 20 to 45.

Feed back control approach for stabilization phase modulator index of PZT phase modulator in all-fiber optic gyroscope is described. Dual core fiber interferometric sensor is applied to detect phase modulating index of PZT cylinder. Fluctuation of modulator versus temperature variation can be approximately eliminated 15 dB by this method.

In an optical fiber gyroscope consisting of sensing fiber coil, an optical phase modulator and an electronic switching circuit for Sagnac phase shift detection, a ratio of the second and the fourth harmonics in the detected output signal is used to control the modulation index. Experimental results show improved operation with stabilized scale factor.

For the sake of small mechanical vibrational amplitude measurements using a laser diode and an optical fiber interferometer, two stabilized measuring systems based on different methods are described. The system stabilities compensating for environmental perturbations are experimentally confirmed. In both systems, the vibrational amplitude can be measured absolutely.

The modulation performance of traveling-wave type LiNbO₃ guided-wave light modulators with coplanar waveguide structure is studied. The analysis shows that the use of a y-cut plate offers a low voltage modulation with decreased electrode separation although the characteristic impedance becomes low.

This letter presents experimental results of an efficient TE-TM mode converter using a Z-propagation LiNbO₃ waveguide. A three-section electrode structure with 10 mm length allows us to control mode coupling and phase matching independently by two different applied voltages. The drive voltage is only 5.2 V with the mode conversion efficiency of 98% when the phase matching condition is satisfied by the voltage tuning. This mode converter is also free from optical damage because of the use of Z-propagation LiNbO₃.

Optical pulse compression by using optical fiber and either conventional Gires-Tournois interferometer or modified one, instead of the grating pair is analysed. The separation of adjacent two pulses by such separation system is also proposed and analysed for the first time.

The measurement of dielectric property of cytochrome-c₃ films reveals unusually large dielectric constant.

We fabricated micro-contact Josephson junctions by self-alignment process, using double-layer-resist electron beam exposure and RIE. We chose Nb as superconductive materials. The junctions show the A.C. Josephson effect under the millimeter wave (70 GHz) radiation less than 100 µW and the 7th Shapiro step.

All-NbN edge junction nanobridges have been reproducibly fabricated. They had nearly ideal characteristics: sharply defined critical current, high resistance100Ω, sharp gap structure at about 4 mV, large I_oR_n products, and low excess current. The sharp LC resonance step at about 1.5 mV was observed in the nanobridge SQUID's. The noise equivalent power was NEP10^-19 W/Hz in Josephson mixing at 101 GHz.

A new and very simple configuration for a Josephson shift register enabling very high-speed operation is developed. Each register component is composed of a master and slave circuits, whose gate type consists of a very simple resistor-loaded three-junction interferometer. Using computer simulation, the highest operation speed of the circuit obtained was 12 GHz. The circuit was designed with an operation margin of over 23%. This new shift register circuit can be used, for instance, as a buffer circuit between a ultra-high speed Josephson A/D converter and room temperature circuits (e.g., amplifiers and memories), to make up the gap in operation speed between them.

The relationship between peak shift and local media noise with regard to each pulse bit has been studied. Local media noise in each bit region was measured using an unsaturated dc erasure method that makes it possible to observe the noise component contained in the pulse peak of signal. A distinct relationship has been found to exist between the peak shift and method noise.

A new write current equalization technique achieved by means of a simple write data operation is presented. This technique nearly doubles the write channel speed and makes it possible to realize a high data transfer rate read/write channel in digital magnetic recording.

Measurements of the carrier to noise ratio (CNR) in Co-Cr/Ni-Fe double layer media for perpendicular magnetic recording were made to investigate the wavelength characteristics of CNR. CNR is constant at long wavelengths, and decreases proportionately as wavelength decreases at short wavelengths.

The recording density 34 KFRPI was achieved by the use of transversal recording. A tape orientated transversal direction was employed and a ferrite head with 3.8 µm gap length and 15.5 µm track width was used. The frequency characteristics of transversal recording and its bitter patterns are described.

We have developed a new type of magnetic head, called a domain-modulation-type optical reproduction head. This head is suitable for reproduction of signals recorded at high density. We made two trial heads and experimented with reproducing recorded signals on a floppy disk.

A three-dimensional magnetic field analysis method is applied to flat-type magnetic circuits for a head positioning actuator. Calculated results agree well with experimental results. This method also leads a better magnetic circuit structure which realizes a uniform magnetic field distribution.

Mechanical interaction in a multi-actuator is suppressed by utilizing a trapezoidal driving current. Fundamental performance of this method is examined experimentally and analytically.

A bang-bang drive with a study function is proposed which minimizes control errors inherent in open loop drive. The study function optimizes the current switching point, resulting in fast and stable access. Some experimental results are described.

This letter considers a method of the detecting wear of CoCr perpendicular flexible disk media by acoustic emission (AE). The AE signal generated by the disk rubbing against the head varies according to the progress of media wear. The pass number at which the AE signal level increases steeply, increases with a decrease in the initial friction coefficient.

An analytical estimation of the date replacement method for optical disk media is discussed. A modified Gilbert model is introduced to describe the bit-error occurrence in the reproduction process. This model deduces the defect-relief probability required to estimate the efficiency of a date replacement method.

Fretting means an oscillatory sliding micromotion. It is well known that contact resistance of static contacts, such as electronic connector, increases remarkably, when such contacts are subjected to fretting. When such fretted contacts are in the state of being totally cut off from any electric source, a millivolt order contact voltage is often induced in them. This paper deals with some experimental stuides and physical discussions on this voltage-emerging phenomenon.

The size of the true contact area of electrical contacts at very low temperature was evaluated by the breakdown of the superconduction caused by the self magnetic field of the current. Qutline of the breakdown of the superconduction in the true contact area were qualitatively clarified by the appearance of the constriction resistance.

This letter presents a newly developed automatic data-acquisition system for contact resistance in which a personal computer is used for control and data processing. And the experimental results on Ag-Pd alloy contacts are reported, especially concerning the relation between Pd contents and resistance.

The relation between driving current and active again drift in 600 MHz band 2-port SAW resonators on quartz substrate is clarified and the threshold level causing the metal-migration is grasped. A practical method for measuring the driving current is proposed.

Lead zirconate PbZrO₃-based materials were studied as a new piezoceramic group based on their dielectric and piezoelectric properties. In the PbZr_x(ZN_1/3Nb_2/3)_1xO₃ system, the antiferroelectric phase changes to the ferroelectric phase at x=0.930.94. Piezoelectric properties are characterized by the large coupling factor of the thickness shear mode.

This letter presents data of the electrical conductivity of KDP solution in the region of 1070 and 2040g KDP/100g water. It was found that there is a point where the slope of the temperature characteristic of the electrical conductivity change and it corresponds to the saturation point of the solution.

A series of experiments on the carbon-resin system thick film resistors of low temperature firing type has been conducted under various conditions of volume mixing ratio of carbon black particle (CB) and carbon fiber (CF) dispersed in binder resin in order to obtain resistors with any desired resistivity as well as with excellent electrical characteristics. From the experimental results optimum conditions in volume ratio of CB against CF, (CB/CF), and volume fraction of CB+CF against total resistor materials including binder resin, , have been found to minimize temperature coefficient (TCR), current noise index (NI) and variation of resistance in heat cycle (VHC).

Polycrystalline Ge films were prepared by photo-assisted chemical vapor deposition with a low pressure Hg lamp as an ultraviolet(UV) light source. The irradiation of the UV light was found to be effective for increasing the deposition rate. The prepared Ge films had polycrystalline structure and p-type conduction. The piezoresistive gauge factor was as large as 30.

Hard and insulating carbon films were prepared by r.f. plasma chemical vapor deposition with d.c. bias. The interfacial characteristics of MIS structures using carbon films as insulator were investigated. The interface state density was 10¹¹eV¹cm² for carbon-Si and carbon-InP MIS diodes.

Epitaxial GaN films have been grown on sapphire substrates at 750 by reactive ion plating. GaN film has a direct energy band gap of 3.36 eV. Conductivity, electron concentration and Hall mobility of undoped epitaxial GaN films are 6160 S/cm, 210¹⁸110¹⁹cm³ and 35100 cm²/Vs, respectively.

Spatio-temporal patterns of electric potential produced by a root of azuki bean were investigated. It was found that the electric potential of a root shows a banding pattern surrounding the root and also a spontaneous oscillation. This electro-magnetic circumstance has a relation to its growth.

This letter presents a new method for estimating discontact rate using the impulsive responses in VHF band to the noise currents flowing through the pantograph of an electric car. Numerical computation to confirm the validity of the method above is also given.

The microwave detection of underground pipes using synthetic aperture techniques has been studied. The results are that the iron pipes (5 cm in diameter) at interval of 50 cm (from 50 cm to 120 cm deep) can be extracted clearly.

A method of quick displaying documents stored in electrical filing systems is discussed. The index codes generated automatically when the pictures of an original page are stored, can be decoded to full-page-size rough pictures on the CRT display. The pages are reconstructed at a maximum speed of nearly 20 pages per second. This method makes it possible to quick look over the pages in the image-coded document filing system.

The synthesis of multiple-valued logic circuits in hybrid mode using Nyquist expansion are discussed. Several simplification techniques and a configuration of multiple-valued ALU in hybrid mode are also presented.

Time Base Error Detection is one of fast speed digital signal processings for the High Definition TV signal. A new flexible method is developed using the Microprogram Control to realize the common hardware for independent from of measuring part of signal and computation algorithm.

A circuit which can supply a low constant power of about 18µW to the thermistor and enable us to measure the resistance of the thermistor at the state that the power is supplied, is described. This circuit can supply nearly constant power to the thermistors whose resistances range from 2 kΩ to 200 kΩ. The error in resistance measurement was within about 1%.

This letter describes an analysis of a series resonant converter in which the effects of the output transformer's magnetizing inductance on the converter's output characteristics are considered. It is clarified that the output power decreases when the magnetizing inductance has a low value.

Switching devices capable of handling more than 800 V exhibit relatively large switching loss. A new current feedback Bi-MOS consisting of a Bipolar Junction Transistor, MOS-FET and current transformer is proposed in this note. The new device reduces switching loss in 100 kHz operation and is expected to result in a DC-DC converter efficiency greater than 90%.

Equivalence classes of Boolean symmetric functions under negations and permutations of variables and negation of output are presented with their number.

An analogue equipment is developed and described, which can automatically identify and track the magnetospheric whistler signal so that we can measure the amplitude ratio and phase difference between two horizontal magnetic field components of each whistler over a wide frequency range (6 to 3 kHz) and then we can study the ionospheric transmission characteristics of whistlers.

The loss change for liquid-crystal-polymer(LCP)-jacketed optical fibers has been investigated under lateral load. A 0.7 mm LCP-jacketed optical fiber has the same lateral-load resistance as that of a conventional 0.9 mm nylon-jacketed fiber to continuing constant lateral load.

This paper consider the problem: Given two points u and v in a simple polygon P, divide P into three parts, locus of points closer to u, that closer to v, and that equidistant from u and v. An O(n²)-time algorithm is presented where n is the number of vertices of the simple polygon.

This paper presents a language called SAL (Service Addition Language) which is used to describe protocol-oriented service specifications for communications software. This language has the following features:
(1) Formal representation of the message sequence diagram: An individual service can be specified in an algebraic form of message sequence diagrams which are widely used in service design.
(2) Separate description of services: New services to be added can be specified without the necessity of referring to the existing services. The synthesizer utility for SAL is prepared to detect any inconsistent relationship between the new and existing services.
(3) Transformability into CCITT SDL (Specification and Description Language) document: As new service specifications are integrated with existing ones, functional specifications in SDL are automatically extended to implement the new along with the existing services. This is also done by the synthesizer.
The algorithm is presented, which detects inconsistent relations between services, and a considerable amount of effort for service addition is shown to be automatable by introducing SAL. SAL and its supporting utilities are intended to be integrated into a development and maintenance environment called a Systems Design Environment (SDE) for communications software. SDE has a utility which generates program codes for the processes defined by the SDL documents which are derived from SAL description.

Using buffered GaAs MESFET logic (BFL) circuits with source follower architecture, ultra-high-speed, master-slave, flip-flop circuits were designed and fabricated. Newly-developed buried p-layer SAINT-FETs with 0.5 µm gate length by electron-beam lithography were used in the frequency divider IC process. A maximum operating frequency of the binary frequency divider was 6.8 GHz with a power consumption of 350 mW. Using dislocation free wafers, a 100% fabrication yield for more than 3.3 GHz operation was attained from four wafers; all frequency divider chips from one wafer operated at more than 5.1 GHz. Using the Advanced SAINT process, a maximum operating frequency of 9.2 GHz with a power consumption of 290 mW was also obtained based on the same circuit design.

A new transform of trinary vectors, called pseudo-Hadamard transform, is introduced. This transform is a one-to-one mapping in a trinary vector space and very similar to the Hadamard transform. To define the pseudo-Hadamard transform, the Good's formula for the fast Hadamard transform H_N of N(=2ⁿ) dimension H_N=T_nT_n1T₁ is used, where the transform T_i(i=1,2,,n) consists of N additions and subtractions. The pseudo-Hadamard transform is defined by replacing the additions and the subtractions with kinds of trinary operations. This transform preserves some properties of the Hadamard transform and is also very easy to perform. As applications of the pseudo-Hadamard transform, examples of binary image processing are presented.

HASP, a model of Human Associative Processor, has been proposed in a previous paper. Among other associative memory models hitherto proposed, HASP is unique in its multiple match resolution. By this function several items associated with one particular key can be retrieved one by one, and set-theoretically defined multiple key search operations can be performed. However, there was a problem in the performance of HASP. It was the occurance of unknown patterns in a recollection sequence of multiply matched items. It would become a serious defect in appling HASP to such a task as serial association, in which an output became a key input for the next association. In this paper, the origin of the problem is identified and HASP is improved not to produce unknown patterns. The idea is to weaken the competitive powers of the unknown patterns by modifying the strength of inhibitory recurrent paths. A series of simulation studies has been carried out and it is confirmed that the improved HASP can perform multiple key search operations without being contaminated by unknown patterns. Several psychological implications of the performance of HASP are also discussed.