Distortion characteristics caused by the thermal memory effect in power amplifiers were accurately predicted using a multi-stage thermal RC-ladder network derived by simplifying the heat diffusion equation. Assuming a steep gradient of heat diffusion near an intrinsic transistor region in a semiconductor substrate, the steady state temperature, as well as the transient thermal response at the transistor region, was estimated. The thermal resistances and thermal capacitances were adjusted to fit a temperature distribution characteristic and a step response characteristic of temperature in the substrate. These thermal characteristics were calculated by thermal FDTD simulation. For an InGaP/GaAs HBT, a step response characteristic for a square-wave voltage signal input was simulated using a large-signal model of the HBT connecting the multi-stage thermal RC-ladder network. The result was verified experimentally. Additionally, for an RF-amplifier using the HBT, the 3rd-order intermodulation distortion caused by the thermal memory effect was simulated and this result was also verified experimentally. From these verifications, a multi-stage thermal RC-ladder network can be used to accurately design super linear microwave power amplifiers and linearizers.

This paper presents data on a reconfigurable predistorter for compensating the nonlinearity of a power amplifier in a system supporting both multimode and multiband operations. For compensation, the magnitude and phase response of a predistorter should be easy to tune to match that of a nonlinear amplifier that is used in various standards. That is to say, the predistorter should show decreasing magnitude followed by increasing magnitude, and the phase must initially lag and then lead, or lead and then lag, as a function of the increasing power input. In doing so, the power turning point, gain & phase deviation, and phase lead & lag should easily be controlled by the proposed reconfigurable predistorter using a bias control and impedance transformer. These characteristics are provided by the nonlinearity of the FET and the movement of the bias point caused by negative current generation. This proposed predistorter can be adopted for a system that uses Global System for Mobile communications (GSM), Code Division Multiple Access (CDMA) 800 MHz, and CDMA 1800 MHz. For example, by adopting this reconfigurable predistorter in a CDMA 1800 MHz, as much as 14 dB improvements in Adjacent Channel leakage Power Ratio (ACPR) at the 4 dB back off power level, can be achieved for the CDMA 1800 MHz signal.

This paper proposes a design method of a Doherty amplifier, which can determine the most efficient backed-off point of the amplifier by adjusting a load modulation parameter. The parameter is defined through the design of output transmission line of a carrier and a peak amplifier using a virtual open stub technique. This paper describes the design results using the technique to optimize efficiency of a Doherty amplifier for an orthogonal frequency division multiplexing (OFDM) signal, and parameter adjustment for a linearized Doherty amplifier using an adaptive digital predistortion (ADPD). Applying this method, the developed 250 W ADPD Doherty amplifier has achieved drain efficiency of 43.4% and intermodulation (IM) distortion of -48.3 dBc with output power of 44.1 dBm (10.1 dB output backed-off) at 563 MHz using an OFDM signal for integrated services digital broadcasting-terrestrial (ISDB-T).

This paper presents a miniaturized dual-mode Doherty PA module applicable for an HPSK signal and an OFDM 64-QAM signal. Dual-mode operation with identical hardware is realized by introducing a bias switching technique, which changes bias conditions of amplifiers according to transmission signals, and employing dual-mode matching circuits, which are designed based on the results of load-pull measurements using an HPSK signal and an OFDM 64-QAM signal. The Doherty PA module consists of a Doherty stage and a gain stage. Two GaAs-HBTs for a Doherty stage and one GaAs-HBT for a gain stage are integrated onto a 1 mm-square single GaAs-MMIC. In the HPSK mode, maximum output power of 26.7 dBm, power added efficiency (PAE) of 41%, and power gain of 27 dB are obtained in the condition that adjacent channel leakage power ratio (ACLR) is under -38 dBc. In the OFDM 64-QAM mode, maximum output power of 21.0 dBm, PAE of 27%, and power gain of 28 dB are obtained under EVM < 3.0%. This is the first multi-mode Doherty PA module suitable for multi peak to average power ratio (PAPR) signals.

Application of microwave and millimeter-wave circuit technologies to InGaP-HBT ICs for 40-Gbps optical-transmission systems is demonstrated from two aspects. First, ICs for various important functions -- amplification of data signals, amplification, frequency doubling, and phase control of clock signals -- are successfully developed based on microwave and millimeter-wave circuit configurations mainly composed of distributed elements. A distributed amplifier exhibits ≥164-GHz gain-bandwidth product with low power consumption (P_C) of 71.2 mW. A 20/40-GHz-band frequency doubler achieves wideband performance (40%) with low P_C (26 mW) by integrating a high-pass filter and a buffer amplifier (as a low-pass filter). A compact 40-GHz analog phase shifter, 20- and 40-GHz-band clock amplifiers with low P_C are also realized. Second, a familiar concept in microwave-circuit design is applied to a high-speed digital circuit. A new approach -- inserting impedance-transformer circuits -- to enable 'impedance matching' in digital ICs is successfully applied to a 40-Gbps decision circuit to prevent unwanted gain peaking and jitter increase caused by transmission lines without sacrificing chip size.

A millimeter-wave low-loss, high-isolation and high-power terminated MMIC switch is developed, and the design theory is formulated. Our invented switch is designed based on a non-linear relationship between the parallel resistance of an FET and its gate width. Our measurements of the parallel resistance with different gate width have revealed that the resistance is inverse proportion to a square of the gate width. By using this relationship, we have found the fact that the multiple FET resonators with smaller gate width and high inductance elements realize high-Q performance for the same resonant frequency. Since the power handling capability is determined by the total gate width, our switch circuit could reduce its insertion loss, keeping the high-power performance. We additionally describe the design method of this switch circuit. The relationships between the gate widths of the FETs and the electrical performances are described analytically. The required gate widths of the FETs for handling high power signal are represented, and the design equations to obtain lower insertion loss and higher isolation performances keeping high power capability are presented. To verify this methodology, we fabricated a MMIC switch. The MMIC had insertion loss of 2.86 dB, isolation of 37 dB and power handling capability of more than 33 dBm at 32 GHz.

One of the interesting submicron MOS FET characteristics is the effect of carrier velocity saturation (CVS) on the drain current. In the CVS region, the transconductance becomes constant independent both of the gate and the drain voltage. In this paper, RF MOS amplifier design technique using the CVS region has been proposed. By setting the FET gate bias to the power supply voltage V_dd, stable operation against V_dd variations can be achieved with a simple circuit configuration. By using this, a 5 GHz amplifier has been designed and fabricated by using 0.18-µm CMOS process technology. The chip has been operated with a gain variation less than 1 dB having a peak gain of 13.5 dB from 1.2 to 2.9 V V_dd.

In this paper, we propose an accurate and scalable S-parameter de-embedding method for RF/microwave on-wafer characterization of silicon MOSFETs. Based on cascade configurations, this method utilizes planar open, short, and thru standards to estimate the effects of surrounding parasitic networks on a MOS transistor. The bulk-shielded open and short standards are used to simulate and de-embed the probe-pad parasitics. The thru standard are used to extract the interconnect parameters for subtracting the interconnect parasitics in gate and drain terminals of the MOSFET. To further eliminate the parasitics of dangling leg in source terminal of the MOSFET, we also introduce the microwave and multi-port network analysis to accomplish the two-port-to-three-port transformation for S-parameters. The MOSFET and its corresponding de-embedding standards were fabricated in a standard CMOS process and characterized up to 40 GHz. The scalability of the open, short, and thru standards is demonstrated and the performance of the proposed de-embedding procedure is validated by comparison with several de-embedding techniques.

A low voltage 3-5 GHz CMOS ultra-wideband low noise amplifier is presented in this paper. A second order bandpass input impedance matching technique is used to achieve the broadband input matching. A folded cascode structure is employed to reduce the supply voltage and power consumption. A source follower acts as the buffer stage for broadband output impedance matching. The supply voltage is only 0.7 V. The operation frequency is 3-5 GHz. The maximum power gain is 13.2 dB. The noise figure is 3-4.2 dB. The power consumption of the core circuit is only 6.3 mW.

A fully integrated 5.8 GHz ETC transceiver LSI has been developed. The transceiver consists of LNA, down-conversion MIX, ASK detector, ASK modulator, DA VCO, and ΔΣ-fractional-N PLL. The features of the transceiver are integrated matching circuitry for LNA input and for DA output, ASK modulator with VGA for local signal control to avoid local leakage and to keep suitable modulation index, and LO circuitry consisting of ΔΣ-fractional-N PLL and interference-robust ∞-shape inductor VCO to diminish magnetic coupling from any other circuitry. Use of these techniques enabled realization of the input and output VSWR of less than 1.25, modulation index of over 95%, and enough qualified TX signals. This transceiver was manufactured by 1P3M SiGe-BiCMOS process with 47 GHz cut-off frequency.

A rectangular waveguide compatible NRD guide E-plane bandpass filter is proposed for 55 GHz band OFDM applications. The NRD guide E-plane bandpass filter is constructed by inserting a metal foil array in the E-plane of NRD guide. Simulation, fabrication, and handling of the filter are not difficult because each resonator is constructed by a couple of metal foils of a simple shape. A Chebyshev response 5-pole bandpass filter with a very narrow bandwidth of 550 MHz is designed and fabricated at 55 GHz band. Simulated and measured filter performances agree well with the design specifications. Insertion loss of the fabricated filter is found to be around 2.0 dB. Although temperature stability of the fabricated filter are found to be within manageable level, the adoption of cyclo olefin polymer can be one of solution for the temperature stability improvement.

This paper presents an ultra-wideband (UWB) bandpass filter using a combination of broadside-coupled structure and lumped-capacitor-loaded shunt stub resonator. The broadside-coupled microstrip-to-coplanar waveguide structure provides an ultra-wide bandpass filtering operation and keeps a good stopband at lower frequencies from DC at the same time. The lumped-capacitor-loaded shunt stub resonator creates two transmission zeros (attenuation poles which can be located at the outsides of the two bandedges of the UWB bandpass filter to improve the out-band performance by selecting a suitable combination of the length of the shunt stubs and the capacitance of the loaded chip capacitors. The filter was designed based on electromagnetic simulation for broadside-coupled structure, microwave circuit simulation and experiments for determining the transmission zeros. The filter was fabricated on a one-layer dielectric substrate. The measured results demonstrated that the developed UWB bandpass filter has good performance: low insertion loss about 0.46 dB and low group delay about 0.26 ns at the center of the passband and very flat over the whole passband, and less than -10 dB reflection over the passband. The implemented transmission zeros, particularly at the low frequency end, dramatically improved the out-band performance, leading the filter satisfy the FCC's spectrum mask not only for indoor but also for outdoor applications. These poles improved also the skirt performance at both bandedges of the filter. A lowpass filter has been also introduced and integrated with the proposed bandpass filter to have a further improvement of the out-band performance at the high frequency end. The filters integrated with lowpass section exhibit excellent filter performance: almost satisfying the FCC's spectrum mask from DC to 18 GHz. The developed UWB bandpass filter has a compact size of 4 cm1.5 cm, or 4.8 cm1.5 cm with lowpass section implemented.

This paper proposes a new type of compact waveguide directional coupler, which is constructed from two crossed E-plane rectangular waveguide with two metallic posts in the square junction and one metallic post at each port. The metallic posts in the square junction are set symmetrically along a diagonal line to obtain the directivity properties. The metallic post inserted at each input/output waveguide port can realize a matched state. Tight-coupling properties 0.79-6 dB are realized by optimizing the dimension of the junction and the positions/radii of the posts. The design results are verified by an em-simulator (Ansoft HFSS) and experiments.

A particle for artificial magnetic materials in microwave frequency is proposed. It has simple structure composed of two parallel metal strips and is suitable to make a thin material extending in the transverse plane. In order to grasp the characteristic the effective permeability is formulated in the form of a transmission line. The characteristics of effective permeability are discussed based on the transmission line model for miniaturization and increase of the permeability. After discussing the reflection from materials with negative permeability or negative permittivity, a high impedance material is constituted. Total reflection with zero phase from the material composed of modified magnetic particles is measured in a waveguide.

Transmission characteristics of a left-handed (LH) ferrite microstrip line are significantly affected by the nonuniform DC bias magnetic field in the ferrite substrate (internal magnetic field H_in) caused by the inhomogeneous demagnetizing effect because the strip conductors of these devices must be mounted at the edge of the ferrite substrate. Three dimensional analyses on the LH ferrite microstrip line are performed taking into account the nonuniform internal magnetic field H_in. The analytical results show that the nonuniform internal magnetic field under the strip conductor near the edge of the ferrite substrate is useful for spreading the frequency band of negative permeability and nonreciprocal operation, and for improvement of both the insertion and return losses of the LH ferrite microstrip line. Measured results of more than 20 dB isolation with 2.2 dB insertion loss and 1.33 GHz bandwidth are corresponding well to the analytical results.

Two-Thickness-Method (TTM) based on an open-ended coaxial probe was investigated with an emphasis on uncertainty analysis to perfect this technique. Uncertainty equations in differential forms are established for the simultaneous measurement of complex electromagnetic (EM) parameters in the systematical consideration of various error factors in measurement. Worst-case differential uncertainty equations were defined while the implicit partial derivation techniques were used to find the coefficients in formulation. The relations between the uncertainties and test sample's thicknesses were depicted via 3D figures, while the influence of the coaxial line's dimension on the measurement accuracy is also included based on the same analysis method. The comparisons between the measured errors and theoretical uncertainty prediction are given for several samples, which validate the effectiveness of our analysis.

Leaky wave radiation from evanescent-mode left-handed (LH) transmission lines is investigated that are composed of a cut-off parallel plate waveguide loaded with a one-dimensional (1-D) array of the disc type dielectric resonators. The apertures are placed on side walls of the parallel plate waveguide. First of all, the dispersion diagram is numerically obtained with the complex eigenmode solutions. The simulated and measured backward wave radiation characteristics validate the backward wave propagation along the 1-D waveguides. Based on the concept, the backfire leaky wave antenna was designed and demonstrated with the 15-cell structure. The beam scanning with the operational frequency was achieved by more than 30 degrees.

The trend of microwave circuits has been toward highly integrated systems. Most design tools for designing microwave circuits mounted the linear or the nonlinear devices adopt the fundamental circuit theory using the S matrix on the frequency domain. The harmonic balance method is also used to correspond to the nonlinear circuit. Therefore, the effect of the electromagnetic field, for example, a mutual coupling between sub-circuits through the space is almost disregarded. To calculate these circuits included its surrounding electromagnetic field, the finite difference time domain method combined with the equivalent circuit simulation had been presented as the lumped element FDTD (LE-FDTD) method. In general, even if an analytical target is a linear circuit, the FDTD method requires very long analytical time. In this paper, we propose an efficient LE-FDTD method to reduce the analytical time. We investigate its efficiency to compare with the conventional LE-FDTD method or measurements, consequently, it is confirmed that the proposal method requires only at analytical time of 1/10 compared with the conventional method. We also show that the proposal method is able to analyze characteristics of the active integrated antenna (AIA) which are practicably impossible to analyze by using the conventional method.

This paper describes a method for evaluating the performance of a small magnetic core loop antenna used for radio controlled watches. Recently, amorphous metal core loop antennas are used as built-in small antennas inside a metal case. It is difficult to perform electromagnetic simulation for amorphous core loop antennas because of the complicated laminate structure. Therefore, we modeled the amorphous metal core loop antenna as an equivalent bulk structure having anisotropic permeability property that we can simulate. We analyzed the receiving sensitivity of the amorphous antenna by calculating the antenna factor. The receiving sensitivity degrades remarkably when an antenna is inside a metal case. We performed further simulation to investigate eddy current losses that cause deterioration.

Novel multiband circular microstrip antennas (C-MSAs) with multiple half-ring slots are presented in this paper. Two antenna-feeding systems, i.e. an embedded L-probe beneath the patch and a coplanar circular arc- shaped probe (T-probe), are used to feed the C-MSA with multiple half-ring slots. The embedded L-probe is used to excite the C-MSA with a double-layer dielectric substrate due to its tremendous performance to provide a wideband impedance matching. The coplanar T-probe is proposed to realize an excellent multiband C-MSA in a single-layer structure. The C-MSA with four half-ring slots fed by the embedded L-probe exhibits satisfactory radiation characteristics. Five frequencies with broadside radiation patterns and gains of at least 5.0 dBi are obtained. It is also confirmed by simulation that resonant frequency and gain can be easily controlled to meet the desired frequency requirements. Moreover, the C-MSA with three half-ring slots fed by the coplanar T-probe presents satisfactory performance over the four observed frequencies with good return losses (-10 dB reference). Broadside radiation patterns with acceptable cross-polarization level and gains in the range of 3.0-7.0 dBi are obtained. Couplings between the C-MSA and the coplanar T-probe have an important contribution to obtain good return losses. It can be controlled by adjusting the distance between them and the arc angle of the coplanar T-probe appropriately. Experiments of both types of antenna were conducted to verify the simulation results and good agreements are confirmed. Due to the performances, these two C-MSAs are considered to be an effective model as a multiband planar antenna.

This paper presents design of an alternating-phase fed single-layer slotted waveguide array for a sector shaped beam in the E-plane radiation pattern. A sector beam pattern is very effective for radar applications for detecting obstacles in a certain angular range without mechanical or electronic scanning. The sector shaped beam with 13 degree beam width is synthesized by a cascade of T-junctions in the feed waveguide which excite the radiating waveguides with a longitudinal shunt slot array. In order to realize the required excitation distribution of the radiating waveguides for the sector shaped beam, 30 T-junctions with symmetrical arrangement are designed by tuning a width of the coupling window, an offset of the window, and a width of the feed waveguide cascaded to the subsequent T-junction, respectively. Design and measurement are performed in 60 GHz band. The prototype antenna assembles easily; the slotted plate is just tacked on the groove feed structure and is fixed by screws at the periphery, which is the key advantage of the alternating-phase fed arrays. The measured sector pattern with low sidelobe level agrees well with the predicted one. Validity of the sector beam design as well as the performance of the alternating-phase fed array is confirmed by the measurement.

We investigated the radio propagation characteristics for line-of-sight (LOS) inter-vehicle communication (IVC) at 60 GHz on an actual road with an undulating surface. Radio propagation tests between two moving vehicles were carried out on a test course. From this, it was found that the measured received power on the actual road and the results calculated for a flat road approximately follow logarithmic normal distributions. To investigate this phenomenon in detail, a propagation test between two stationary vehicles on a road was performed. Furthermore, calculations using geometrical optics taking road undulation into consideration demonstrated that undulation in the road can cause variations in the received power that follow a logarithmic normal distribution. Finally, the received power for moving vehicles on an undulating road was calculated using the model.

FM converted CATV and super high frequency satellite TV signal transmission using lithium niobate Mach-Zehnder optical SSB modulator is proposed and demonstrated. Simultaneous FM-converted 40 CATV signal carriers (from 93 to 375 MHz) and 104 super high frequency satellite TV signal carriers (from 11.7 to 20.2 GHz) could be transmitted with good noise properties and distortion quality over 40 km of dispersive SMF with chromatic dispersion of 680 ps/nm. We clarify the required phase and power values by experiments on the relationship between sideband suppression ratio (SSR) and the phase/power to LN MZ optical SSB modulator. For instance, the absolute value of phase and power should be less than 5 degrees and 0.4 dB, respectively, to obtain SSR values above 35 dB.

In this paper, an ultra-low power variable-resolution sigma-delta (ΣΔ) modulator for biomedical application is presented. The resolution of proposed modulator can be adjusted by switching its sampling frequency and architecture. The architecture is switched between second-order single-loop modulator and fourth-order cascaded second stage noise shaped modulator to reach different resolution requirement. The proposed sigma-delta modulator is implemented by single phase integrators based on a fully differential switched-capacitor circuit. The digital cancellation logic is embedded in the chip so that it would easily be integrated with biomedical instrument for effective acquisition. Experimental results of the proposed variable-resolution ΣΔ modulator fabricated in standard CMOS 0.18 µm technology confirm the expected specifications from 65 dB signal-to-noise distortion to 96 dB with 1 kHz bandwidth and power consumption range from 48 µW to 360 µW with a 1.8 V battery supply.

Drivability-improved MOSFETs were successfully fabricated by using nano-grating silicon wafers. There was almost no additional process change in device fabrication when the height of the gratings was less than the conventional macroscopic wafer surface roughness. The MOSFETs with the grating height of 35 nm showed 21% improvement in current drivability compared to the conventional one with the same device occupancy area. And the roll-off characteristic of threshold voltage of nano-grating device held the line of conventional one in despite of the 3-D channel structure. The technology provides great advantages for drivability improvement without paying much tradeoff of process cost. This proposal will be useful to CMOS-LSIs with high performance in general.

In this letter, the fabrication of a compact and high performance semi-lumped coplanar waveguide low-pass filter (CPW-LPF) on high resistivity silicon (HRS) substrate at millimeter wave is proposed. The design procedure and the equivalent circuit of the proposed semi-lumped CPW-LPF is discussed. The filter structure of is very simple but its performances is fairly good. This designed filter at cutoff frequency f_c of 31 GHz has very good measured characteristics including the low insertion loss, sharp rejection and low group delay, due to the reduced substrate loss of HRS. Experimental results of the fabricated filter show a good agreement with the predicted results.

This letter describes a digitally controlled duty cycle corrector (DCC) with 1 ps resolution. A new half period delay line (HPDL) control scheme using a delay locked loop (DLL) is proposed. The DCC has an output duty error less than 0.5% for 25% input duty error and operates correctly from 200 MHz to 800 MHz in a 0.18 µm CMOS technology.

Endothelial cell adhesion and growth were investigated on three types of surfaces with a plasma-polymerized coating (PPC): (1) the pristine surface of a hexamethyldisiloxane (HMDS) PPC (hydrophobic, electrically neutral surface); (2) an HMDS PPC surface with nitrogen-containing plasma treatment (hydrophilic, positively charged surface); and (3) an HMDS PPC surface treated with oxygen plasma (hydrophilic, negatively charged surface). Endothelial cells grew on surface (2) but not on surfaces (1) or (3). Next, endothelial cell adhesion and growth was investigated on a surface on which 80-µm squares were micro-patterned at 160-µm intervals in a mosaic composed of two different (cell-adhesive and non-cell-adhesive) regions. Cell growth on the patterned surfaces was different from that on non-patterned surfaces. PPC was shown to be a simple process for modulating cell adhesion to surfaces.