A ferroelectric-based (FE-based) non-volatile logic is proposed for low-power LSI. Standby currents in a logic circuit can be cut off by using FE-based non-volatile flip-flops (NVFFs), and the standby power can be reduced to zero. The FE capacitor is accessed only when the power turns on/off, performance of the NVFF is almost as same as that of the conventional flip-flop (FF) in a logic operation. The use of complementarily stored data in coupled FE capacitors makes it possible to realize wide read voltage margin, which guarantees 10 years retention at 85 degree Celsius under less than 1.5V operation. The low supply voltage and electro-static discharge (ESD) detection technique prevents data destruction caused by illegal access for the FE capacitor during standby state. Applying the proposed circuitry in CPU, the write and read operation for all FE capacitors in 1.6k-bit NVFFs are performed within 7µs and 3µs with access energy of 23.1nJ and 8.1nJ, respectively, using 130nm CMOS with Pb(Zr,Ti)O3(PZT) thin films.

Energy-harvesting devices are materials that allow ambient energy sources to be converters into usable electrical power. While a battery powers the modern embedded systems, these energy-harvesting devices power the energy-harvesting embedded systems. This claims a new energy efficient management techniques for the energy-harvesting systems dislike the previous management techniques. The higher entire system efficiency in an energy-harvesting system can be obtained by a higher generating efficiency, a higher consuming efficiency, or a higher transferring efficiency. This paper presents a generalized technique for a dynamic reconfiguration and a task scheduling considering the power loss in DC-DC converters in the system. The proposed technique minimizes the power loss in the DC-DC converter and charger of the system. The proposed technique minimizes the power loss in the DC-DC converters and charger of the system. Experiments with actual application demonstrate that our approach reduces the total energy consumption by 22% in average over the conventional approach.

Solid-state disks (SSDs) have received much attention as replacements for hard disk drives (HDDs). One of their noticeable advantages is their high-speed read/write operation. To achieve good performance, SSDs have an internal memory hierarchy which includes several volatile memories, such as DRAMs and SRAMs. Furthermore, many SSDs adopt aggressive memory management schemes under the assumption of stable power supply. Unfortunately, the data stored in the volatile memories are lost when the power supplied to SSDs is abruptly shut off. Such power failure is often observed in portable devices. For this reason, it is critical to provide a power failure protection scheme for reliable SSDs. In this work, we propose a power-failure protection scheme for SSDs to increase their reliability. The contribution of our work is three-fold. First, we design a power failure protection circuit which incorporates super-capacitors as well as rechargeable batteries. Second, we provide a method to determine the capacity of backup power sources. Third, we propose a data backup procedure when the power failure occurs. We implemented our method on a real board and applied it to a notebook PC with a contemporary SSD. The board measurement and simulation results prove that our method is robust in cases of sudden power failure.

This paper presents a decoupling capacitance boosting method for the resonant supply noise reduction by fast voltage hopping of DVS systems. The proposed method utilizes a foot transistor as a switch between a conventional decoupling capacitor (decap) and GND. The switching controls of the foot transistor depending on the supply noise states achieve an effective noise reduction as well as fast settling time compared with the conventional passive decaps. The measurement results of a test chip fabricated in a 0.18 µm CMOS technology show 12X boost of effective decap value, and 65.8% supply noise reduction with 96% settling time improvement.

This paper proposes a pipeline analog-to-digital converter (ADC) with non-binary encoding technique based on β-expansion. By using multiply-by-β switched-capacitor (SC) multiplying digital-to-analog converter (MDAC) circuit, our proposed ADC is composed by radix-β (1 < β < 2) 1 bit pipeline stages instead of using the conventional radix-2 1.5 bit/1 bit pipeline stages to realize non-binary analog-to-digital conversion. Also with proposed β-value estimation algorithm, there is not any digital calibration technique is required in proposed pipeline ADC. The redundancy of non-binary ADC tolerates not only the non-ideality of comparator, but also the mismatch of capacitances and the gain error of operational amplifier (op-amp) in MDAC. As a result, the power hungry high gain and wide bandwidth op-amps are not necessary for high resolution ADC, so that the reliability-enhanced pipeline ADC with simple amplifiers can operate faster and with lower power. We analyse the β-expansion of AD conversion and modify the β-encoding technique for pipeline ADC. In our knowledge, this is the first proposal architecture for non-binary pipeline ADC. The reliability of the proposed ADC architecture and β-encoding technique are verified by MATLAB simulations.

A 6-bit, 7 mW, 700 MS/s subranging ADC using Capacitive DAC (CDAC) and gate-weighted interpolation fabricated in 90 nm CMOS technology is demonstrated. CDACs are used as a reference selection circuit instead of resistive DACs (RDAC) for reducing settling time and power dissipation. A gate-weighted interpolation scheme is also incorporated to the comparators, to reduce the circuit components, power dissipation and mismatch of conversion stages. By virtue of recent technology scaling, an interpolation can be realized in the saturation region with small error. A digital offset calibration technique using capacitor reduces comparator's offset voltage from 10 mV to 1.5 mV per sigma. Experimental results show that the proposed ADC achieves a SNDR of 34 dB with calibration and FoM is 250 fJ/conv., which is very attractive as an embedded IP for low power SoCs.

A design methodology for implementation of low-noise switched-capacitor low-pass filter (SC LPF) with small capacitance spread is proposed. The proposed method is focused on the reduction of operational amplifier noise transfer gain at low frequencies and the reduction of total capacitance. A new SC LPF topology is proposed in order to adapt the correlated double sampling and charge scaling technique at the same time. Design examples show that proposed filter reduces the total capacitance by 65% or more compared to the conventional one without having significant increase in noise transfer gain.

An on-chip soft-start circuit based on a switched-capacitor for DC-DC switching regulator is presented. A ramp-voltage, which is generated by a switched-capacitor, is used to make pulse width slowly increase from zero, in order to eliminate the inrush current and the overshoot voltage during start-up. The post simulation results show that the regulator soft starts well with the proposed soft-start circuit.

A low power and high performance with third order delta-sigma modulator for audio applications, fabricated in a 0.18 µm CMOS process, is presented. The modulator utilizes a third order noise shaping with only one opamp by using an opamp sharing technique. The opamp sharing among three integrator stages is achieved through the optimal operation timing, which makes use of the load capacitance differences between the three integrator stages. The designed modulator achieves 101.1 dB signal-to-noise ratio (A-weighted) and 101.5 dB dynamic range (A-weighted) with 7.5 mW power consumption from a 3.3 V supply. The die area is 1.27 mm2. The fabricated delta-sigma modulator achieves the highest figure-of-merit among published high performance low power audio delta-sigma modulators.

The performance of successive approximation register (SAR) analog-to-digital converter (ADC) is well balanced between power and speed compare to the conventional flash or pipeline architecture. The nonlinearities suffer from the CDAC mismatch and comparator offset degrades SAR ADC performance in terms of DNL and INL. An on chip histogram-based digitally assisted background calibration technique is proposed to cancel and relax the aforesaid nonlinearities. The calibration is performed using the input signal, watching the digital codes in the specified vicinity of the decision boundaries, and feeding back to control the compensation capacitor periodically. The calibration does not require special calibration signal or additional analog hardware which is simple and amenable to hardware or software implementations. A 9-bit SAR ADC with split CDAC has been implemented in a 65 nm CMOS technology and it achieves a peak SNDR of 50.81 dB and consumes 1.34 mW from a 1.2-V supply. +0.4/-0.4 LSB DNL and +0.5/-0.7 LSB INL are achieved after calibration. The ADC has input capacitance of 180 fF and occupies an area of 0.10.13 mm2.

In this paper, a fifth order curer low-pass filter using as switched-capacitor (SC) architecture is proposed and fabricated with TSMC 0.18 µm CMOS process. A fully differential SC is adopted via the bilinear transform of the corresponding analogue RLC passive prototype. To reach the largest possible input dynamic range and save chip area, the method of dynamic range scaling and minimum capacitor scaling is used. Measured results show that the proposed filter achieves a pass-band of 12.1 MHz with a sampling rate of 100 MHz, a SFDR of 50 dB, a stop-band attenuation greater than 50 dB and a power consumption of 48.5 mW at 1.8 V power supply. Including pads, the chip area occupies 1.515 (1.391.09) mm2. This paper has the feature of low noise, excellent linearity of the filter, and high stability. The experimental results show that it has perfect performance for WiMAX applications and standard is recommended.

Switched parasitic capacitors of sleep blocks with a tri-mode power gating structure are implemented to reduce on-chip resonant supply noise in 1.2 V, 65 nm standard CMOS process. The tri-mode power gating structure makes it possible to store charge into the parasitic capacitance of the power gated blocks. The proposed method achieves 53.1% and 57.9% noise reduction for wake-up noise and 130 MHz periodic supply noise, respectively. It also realizes noise cancelling without discharging time before using parasitic capacitors of sleep blocks, and shows 8.4x boost of the effective capacitance value with 2.1% chip area overhead. The proposed method can save the chip area for reducing resonant supply noise more effectively.

A technique to reduce noise transfer functions (NTF) of switched-capacitor (SC) integrators without changing their signal transfer functions (STF) is proposed. The proposed technique based on a simple reconnection scheme of multiple sampling capacitors. It can be implemented into any SC integrators as long as they have a transfer delay. A design strategy is also given to reduce the effect of parasitic capacitors. An SC integrator with a small total capacitance and a low noise transfer gain based on the proposed technique is also proposed. For a given design example, the total capacitance and the simulated noise transfer gain of the proposed SC integrator are 37% and 90% less than the conventional one.

A 20 kHz audio-band ADC with a single pair of power and ground pads is implemented for a digital electret microphone. Under the limited power/ground pad condition, the switching noise effect on the signal quality is estimated via post simulations with parasitic models. Performance degradation is minimized by time-domain noise isolation with sufficient time-spacing between the sampling edge and the output transition. The prototype ADC was implemented in a 0.18 µm CMOS process. It operates under a minimum supply voltage of 1.6 V with total current of 420 µA. Operating at 2.56 MHz clock frequency, it achieves 84 dB dynamic range and a 64 dB peak signal-to-(noise+distortion) ratio. The measured power supply rejection at a 100 mVpp 217 Hz square wave is -72 dB.

A 200 kS/s 10-bit successive approximation (SA) analog-to-digital converter (ADC) with a rail-to-rail input signal is proposed for acquiring biosignals such as EEG and MEG signals. A split-capacitor-based digital-to-analog converter (SC-DAC) is used to reduce the power consumption and chip area. The SC-DAC's linearity is improved by using dummy capacitors and a small bootstrapped analog switch with a constant on-resistance, without increasing its area. A time-domain comparator with a replica circuit for clock feed-through noise compensation is designed by using a highly differential digital architecture involving a small area. Its area is about 50% less than that of a conventional time-domain comparator. The proposed SA ADC is implemented by using a 0.18-µm 1-poly 6-metal CMOS process with a 1 V supply. The measured DNL and INL are +0.44/-0.4 LSB and +0.71/-0.62 LSB, respectively. The SNDR is 55.43 dB for a 99.01 kHz analog input signal at a sampling rate of 200 kS/s. The power consumption and core area are 5 µW and 0.126 mm2, respectively. The FoM is 47 fJ/conversion-step.

Low drop-out regulators (LDOs) are widely used in the system-on-a-chip (SoC) design. Due to the multi-function and energy saving requirements for mobile applications nowadays, more strict specifications are expected on the developmental roadmap of the LDOs. An output-capacitorless LDO providing fast transient response under the low supply voltage and low quiescent current conditions is proposed in this paper. Provided by the low supply voltage, the proposed LDO adopts cascading technique using the Multipath Nested Miller Compensation (MNMC) to maintain a higher bandwidth for fast transient requirement. In addition, a Transient Quiescent Current Booster (TQCB) is supplemented to the operational amplifier to improve the slew rate for the fast load transient. The TQCB only raises the quiescent current during the load transient instant so that both power saving and the load response improvement could be well achieved. It deserves noting that the proposed TQCB contains only two transistors, which is simple to be implemented compared to the other transient current enhancement techniques. The designed LDO has only 1.6 pF capacitance for the totally added on-chip compensation, and 25.8 µA of current consumption in the main amplifier. The recovery time under the fast load change is less than 3 µs and the stability is guaranteed. Test results from the real implementation of a 0.35 µm CMOS process verify that the designed LDO performs as expected.

In this paper, a novel switched-capacitor DC-DC converter with pulse density and width modulation (PDWM) is proposed with reduced output ripple at variable output voltages. While performing pulse density modulation (PDM), the proposed PDWM modulates the pulse width at the same time to reduce the output ripple with high power efficiency. The prototype chip was implemented using 65 nm CMOS process. The switched-capacitor DC-DC converter has 0.2-V to 0.47-V output voltage and delivers 0.25-mA to 10-mA output current from a 1-V input supply with a peak efficiency of 87%. Compared with the conventional PDM scheme, the proposed switched-capacitor DC-DC converter with PDWM reduces the output ripple by 57% in the low output voltage region with the efficiency penalty of 2%.

We propose the collective electron tunneling model in the electron injection process between the Nano Dots (NDs) and the two-dimensional electron gas (2DEG). We report the collective motion of electrons between the 2DEG and the NDs based on the measurement of the Si-ND floating gate structure in the previous studies. However, the origin of this collective motion has not been revealed yet. We evaluate the proposed tunneling model by the model calculation. We reveal that our proposed model reproduces the collective motion of electrons. The insight obtained by our model shows new viewpoints for designing future nano-electronic devices.

A fifth-order switched-capacitor (SC) complex filter was implemented in 0.2-µm CMOS technology. A novel SC integrator was developed to reduce the die size and current consumption of the filter. The filter is centered at 24.730.15 kHz (3δ) and has a bandwidth of 20.260.3 kHz (3δ). The image channel is attenuated by more than 42.6 dB. The in-band third-order harmonic input intercept point (IIP3) is 17.3 dBm, and the input referred RMS noise is 34.3 µVrms. The complex filter consumes 350 µA with a 2.0-V power supply. The die size is 0.578 mm2. Owing to the new SC integrator, the filter achieves a 27% reduction in die size without any degradation in its characteristics, including its noise performance, compared with the conventional equivalent.

A switched-capacitor integrator based on dynamic source follower amplifiers has been proposed. Integrator operation has been confirmed and analyzed by assuming 0.18-µm CMOS technology. The integrator can reduce the number of elements considerably compared with conventional ones using operational amplifiers. As a result, the power dissipation of proposed integrator can be reduced to approximately one-eighth that of conventional integrators. The integrator is applied to a second-order ΔΣ modulator, and its successful operation has been confirmed by transistor-level circuit simulation.