The analog IC technology, might sound old-fashioned, is still important for the future wireless systems such as 4G cellular phone systems, broadband wireless networkings, and wireless sensor networkings. The analog features and issues of the scaled CMOS transistor, the basic issue and the technology trend for the ADC as an important building block of wires systems, and the feature of the digital RF architecture proposed recently are reviewed and discussed. Higher speed and lower power consumption are expected for low SNR systems along with the further technology scaling. However, the high SNR system is not realized easily due to a decrease of signal voltage. One of the important technology trends is the digitalization of RF signal to realize the system flexibility, robustness, area shrinking, and TAT shortening.

We present C-doped SiGe (SiGe:C) heterojunction bipolar transistor (HBT) devices that exhibit highly efficient and linear power characteristics comparable to those of GaAs HBTs under wide-band code-division multiple-access (WCDMA) modulation. Our devices have a novel resistor inserted in their base bias current pass, which is designed to short-circuits DC components of the base current and conducts only envelope frequency signals. The impurity concentration at their emitter-base junctions is reduced by the effect of C doping suppressing B diffusion, and the emitter capacitance is decreased to half that of conventional SiGe HBTs as the result. The combination of these two modifications has significantly reduced the adjacent channel power leakage ratio (ACPR), and the idle current, without degrading power-added-efficiency (PAE). An optimized device with a total emitter area of 3390 µm² exhibited 48% PAE and 27.4-dBm output power with an ACPR of less than -40 dBc at an idle current of 20 mA under WCDMA modulation at 1.95 GHz and 3.4-V bias voltage.

This paper investigates limitations of adjacent channel power ratio (ACPR) improvement in predistortion (pre-D) linearizer used with nonlinear RF power amplifiers (PAs) when the PA model is not perfectly acquired in pre-D design. The error between the physical PA and the nonlinear model is expanded by pre-D function and its power spectral density (PSD) works as limitations in ACPR improvement of the pre-D linearizer. An analytical estimation of ACPR limitations in RF PAs driven by digitally modulated input signal is derived using a formulation of autocorrelation function. The analysis technique is validated with the example of the memory polynomial PA model with the quasi-memoryless pre-D linearizer. The technique is also verified by comparing predicted ACPR limitation with measured limitation for a RF PA with 802.11g input signal.

This paper presents an even harmonic quadrature mixer (EH-QMIX) with a simple filter configuration and an integrated LTCC module including LNAs, band rejection filters (BRFs), and the proposed EH-QMIX for W-CDMA direct conversion receiver (DCR). Since the DCR has no spurious responses, a BRF instead of a high-Q band pass filter can be applicable for eliminating undesired signals and it can be built in the LTCC substrates easily. As LO frequency is half of RF frequency in the EH-QMIX, diplexer can be composed of simple filters and it can be also integrated in the substrates. As a result, the whole RF circuits of the EH-DCR using a proposed EH-QMIX are integrated in the LTCC module and miniaturization of the receiver is achieved. Moreover, in order to suppress the degradation of the amplitude and the phase imbalances in the quadrature mixer caused by interferences of signals, RF characteristics of the circuits in the mixer such as reflection coefficients, isolations are discussed. A developed LTCC module shows good performances for W-CDMA direct conversion receiver.

The port-to-port isolation of the micromixer is studied using three different p-type downconversion micromixers in 0.35-µm CMOS technology. Both the body effect and the well isolation influence the port-to-port isolation significantly. The body effect degrades the LO-to-IF isolation and also deteriorates the LO-to-RF isolation. Without the well isolation, the LO-to-RF isolation drops. However, the RF-to-IF isolation is independent of the body effect and well isolation. The p-type micromixer with a separate N-well and without body effect has the best port-to-port isolation properties; its LO-to-IF, LO-to-RF, and RF-to-IF isolations are -59 dB, -58 dB, and -30 dB, respectively.

An RF adaptive array antenna (RF-AAA) configured with variable capacitors is proposed. This antenna system can control the power combining ratio and phase value of received signals. In this paper, we focus on the diversity effects of RF-AAA. First, we show the design methodology of the combiner circuit to realize the effective combining. Second, the perturbation method and the steepest gradient method are compared for the optimization algorithms to provide fast convergence and suboptimum solutions among the variable circuit constants. Finally, in simulation, we show the RF-AAA can achieve diversity antenna gains of 7.7 dB, 10.9 dB and 12.6 dB for 2-branch, 3-branch and 4-branch configuration, respectively, which have higher performance than the selection combining.

A novel method is proposed to synthesize dual-band bandpass filters (BPFs) from a prototype lowpass filter. By implementing successive frequency transformations and circuit conversions, a new filter topology is obtained which consists of only admittance inverters and series or shunt resonators, and is thereby easy to be realized by using conventional distributed elements. A microstrip dual-band BPF with central frequencies of 1.8 GHz and 2.4 GHz is designed and fabricated using microstrip lines and stubs. The simulated and measured results show a good agreement and validate thereby the proposed theory.

Two compact and low loss dual-mode filters are proposed by using degenerate modes of slotted triangular microstrip patch resonators. The geometrical size and radiation loss of the triangular patch are reduced simultaneously by loading both horizontal and vertical slots. The resonant frequencies of two degenerate modes can be easily controlled by varying the dimensions and positions of the slots. A two-pole dual-mode filter operating at 3.94 GHz with a fractional bandwidth of 4.3% is designed, fabricated, and measured. The measured results verify well the theoretical predictions.

This paper presents a design procedure of multilayer single-input/single-output dual-band filters of small size fabricated in high-permittivity LTCC (Low Temperature Co-fired Ceramic) substrates. The present dual-band filter, with pass bands of 950 MHz and 1.9 GHz, consists of two single-band filters each one of which has a matching circuit for controlling the input impedance in the pass band of the counterpart. Discussed first in this paper is a dual-band filter that has the matching circuit connected to the single-band filters externally. Then, a dual-band filter with the matching circuit embedded in its body is investigated together with metallization patterns of the matching elements. Presented finally is a very small single-input/single-output dual-band filter suitable for dual-band wireless communication systems.

A new small-signal model for fully depleted silicon-on-insulator (FD-SOI) MOSFETs operating at RF frequencies is presented. The model accounts for the non-quasi-static effect by determining model parameters using a curve fitting procedure to reproduce the frequency response of FD-SOI MOSFETs. The accuracy of the model is validated by comparison of S parameters with measured results in the range from 0.2 GHz to 20 GHz.

A selectively ion-implanted collector (SIC) is implemented in a 0.8 µm BiCMOS process to improve the RF characteristics of the BJT devices. The SIC BJT device has better f_t and f_max than the FIC (fully ion-implanted collector) BJT device because the extrinsic base-collector capacitance is reduced by the SIC process. The f_t is 7.8 GHz and f_max is 9.5 GHz for the SIC BJT device while the f_t is 7.2 GHz and f_max is 4.5 GHz for the FIC BJT device when biased at V_ce=3.6 V and J_c=0.07 mA/µm². The noise parameters are the same for both BJT devices but the associated gain is higher for the SIC BJT device.

In this paper, the magnetic field properties and the dosimetry at intermediate frequency (21 kHz) for an induction heater are investigated with the coil model, which is prescribed as substitute source model in the European standard EN50366 (CENELEC). The accuracy of the magnetic field vectors and the values of the induced current density, which are achieved with the coil model, are compared with the results of a realistic model of the induction heater obtained from the equivalent source model. It is shown that the coil model coincides well for the magnitude of the magnetic field strength around the induction heater. On the other hand, the dominant field vector of the coil model differs significantly from the real induction heater, which leads to induced current densities in the body model which are three time larger. Owing to these results, the applicability of the coil model prescribed in the EN50366 is confirmed for the induction heater.

Bi-stable displays form the foundation of a novel and attractive LCD technology. From now on, images can be maintained on the LCD after driving voltages have been withdrawn from the electrodes. In low frame-rate applications such as e-books, e-labels, smartcards etc., this offers a major improvement in power consumption and battery life. However, bi-stable displays require high driving voltages and complex waveforms. Furthermore, the nature of some applications doesn't allow the use of relatively large passive components. This rules out more traditional approaches for high-voltage generation with external coils or capacitors. This paper describes the design of completely integrated and programmable high-voltage generators capable of generating output voltages up to 50 V out of a 3 V supply voltage. Features like 8-bit output voltage programmability and stabilisation were implemented to make this type of high-voltage generator suitable for bi-stable display drivers. Design aspects and simulation results are discussed, as well as measurements on prototype generators implemented in the 0.7 µm 100 V I²T100 technology from AMI Semiconductor.

This paper presents fingerprint image enhancement and rotation schemes that improve the identification accuracy with the pixel-parallel processing of pixels. In the schemes, the range of the fingerprint sensor is adjusted to the finger state, the captured image is retouched to obtain the suitable image for identification, and the image is rotated to the correct angle on the pixel array. Sensor and pixel circuits that provide these operations were devised and a test chip was fabricated using 0.25-µm CMOS and the sensor process. It was confirmed in 150,000 identification tests that the schemes reduce the false rejection rate to 6.17% from 30.59%, when the false acceptance rate is 0.1%.

The effect of the power/ground plane on the through-hole signal via is analyzed in a viewpoint of a band-stop filter. When the through-hole signal via passes through the power/ground plane, the return current path discontinuity of the through-hole signal via occurs due to the high impedance of the power/ground plane. Since the high impedance is produced by the power/ground plane resonance, it acts as a band-stop filter, which is connected to the signal trace in series. Therefore, the power/ground plane filters off its resonance frequency component by absorbing and reflecting from the signal on the through-hole signal via, and consequently the signal distortion, the power/ground plane noise voltage, and the consequent radiated emission occur. With S-parameter and TDR-TDT measurements, the band-stop effect of the power/ground plane on the through-hole signal via is confirmed. And then, this analysis is applied to the clock transmission through the through-hole signal via to obtain the clearer confirmation. The measurements of the distorted clock waveforms, the induced power/ground plane noise voltages, and the radiated emissions depending on the power/ground plane impedance around the through-hole signal via are shown.

This paper shows that the Surrounding Gate Transistor (SGT) can be scaled down to decananometer gate lengths by using an intrinsically-doped body and gate work function engineering. Strong gate controllability is an essential characteristics of the SGT. However, by using an intrinsically-doped body, the SGT can realize a higher carrier mobility and stronger gate controllability of the silicon body. Then, in order to adjust the threshold voltage, it is necessary to adopt gate work function engineering in which a metal or metal silicide gate is used. Using a three-dimensional (3D) device simulator, we analyze the short-channel effects and current characteristics of the SGT. We compare the device characteristics of the SGT to those of the Tri-gate transistor and Double-Gate (DG) MOSFET. When the silicon pillar diameter (or silicon body thickness) is 10 nm, the gate length is 20 nm, and the oxide thickness is 1 nm, the SGT shows a subthreshold swing of 63 mV/dec and a DIBL of -17 mV, whereas the Tri-gate transistor and the DG MOSFET show a subthreshold swing of 71 mV/dec and 77 mV/dec, respectively, and a DIBL of -47 mV and -75 mV, respectively. By adjusting the value of the gate work function, we define the off current at V_G = 0 V and V_D = 1 V. When the off current is set at 1 pA/µm, the SGT can realize a high on current of 1020 µA/µm at V_G = 1 V and V_D = 1 V. Moreover, the on current of the SGT is 21% larger than that of the Tri-gate transistor and 52% larger than that of the DG MOSFET. Therefore, the SGT can be scaled reliably toward the decananometer gate length for high-speed and low-power ULSI.

This paper proposes a parallel coupled microstrip bandpass filter (BPF) with ring Electromagnetic Bandgap (EBG) cells on the middle layer for spurious suppression. The ring EBG cells of the middle layer add a good stopband-rejection mode to the second harmonics of the parallel coupled microstrip BPF with suppression of over -50 dB, without affecting the center frequency and insertion loss of the original designed BPF. The design of ring EBG cells is presented and verified by the experimented results.

In this paper a newly designed internally-coupled asymmetric stepped-impedance resonator (SIR) bandpass filter (BPF) is proposed. The asymmetric SIR structure not only can effectively reduce the circuit size but also can provide two flexibly tunable transmission zeros near the lower and upper passband edges. The first transmission zero is due to the series resonance of the quarter-wavelength open stepped-impedance stub, and the second one is produced by anti-parallel coupling between adjacent SIRs. The proposed BPF was fabricated and simulated using the commercial software HFSS, and agreement between the measured and simulated results was observed. A 0.9-dB insertion loss and a shape factor of 3.6 were achieved in the passband, thus indicating that the proposed filter structure is of practical value.