In this paper the transfer function of a system with windowed current integration is discussed. This kind of integration is usually used in a sampling mixer and the current is generated by a transconductance amplifier (TA). The parasitic capacitance (Cp) and the output resistance of the TA (Ro,TA) before the sampling mixer heavily affect the performance. Calculations based on a model including the parasitic capacitance and the output resistance of the TA is carried out. Calculation results show that due to the parasitic capacitance, a notch at the sampling frequency appears, which is very harmful because it causes the gain near the sampling frequency to decrease greatly. The output resistance of the TA makes the depth of the notches shallow and decreases the gain near the sampling frequency. To suppress the effect of Cp and Ro,TA, an operational amplifier is introduced in parallel with the sampling capacitance (Cs). Simulation results show that there is a 17 dB gain increase while Cs is 1,pF, gm is 9,mS, N is 8 with a clock rate of 800,MHz.

A 7GS/s complete-DDFS-solution featuring a two-times interleaved RDAC with 1.2Vpp-diff output swing was fabricated in 65nm CMOS. The frequency tuning and amplitude resolutions are 24-bits and 10-bits respectively. The RDAC includes a mixed-signal, high-speed architecture for random swapping thermometer coding dynamic element matching that improves the narrowband SFDR up to 8dB for output frequencies below 1.85GHz. The proposed techniques enable a 7 GS/s operation with a spurious-free dynamic range better than 32dBc over the full Nyquist bandwidth. The worst case narrowband SFDR is 42dBc. This system consumes 87.9mW/(GS/s) from a 1.2V power supply when the RSTC-DEM method is enabled, resulting in a FoM of 458.9GS/s·2(SFDR/6)/W. A proof-of-concept chip with an active area of only 0.22mm2 was measured in prototypes encapsulated in a 144-pins low profile quad flat package.

This paper proposes a novel wideband voltage-controlled oscillator (VCO) for multi-band transceivers. The proposed oscillator has a core VCO and a tuning-range extension circuit, which consists of an injection-locked frequency divider (ILFD) and flip flop dividers. The two-stage differential ILFD generates quadrature outputs and realizes two, three, four, and six of divide ratio with very wide output frequency range. The proposed circuit is implemented by using a 90 nm CMOS process, and the chip area is 250200 µm2. The measured result achieves continuous frequency tuning range of 9.3 MHz-to-5.7 GHz (199%) with -210 dBc/Hz of figure-of-merit (FoMT).

This paper proposes a de-embedding method for on-chip S-parameter measurements at mm-wave frequency. The proposed method uses only two transmission lines with different length. In the proposed method, a parasitic-component model extracted from two transmission lines can be used for de-embedding for other-type DUTs like transistor, capacitor, inductor, etc. The experimental results show that the error in characteristic impedance between the different-length transmission lines is less than 0.7% above 40 GHz. The extracted pad model is also shown.

A 60-GHz power amplifier (PA) with a reliability consideration for a hot-carrier-induced~(HCI) degradation is presented. The supply voltage of the last stage of the PA ($V_{{ m PA}}$) is dynamically controlled by an on-chip digitally-assisted low drop-out voltage regulator (LDO) to alleviate HCI effects. A physical model for estimation of HCI degradation of NMOSFETs is discussed and investigated for dynamic operation. The PA is fabricated in a standard 65-nm CMOS process with a core area of 0.21,mm$^{2}$, which provides a saturation power of 10.1,dBm to 13.2,dBm with a peak power-added efficiency~(PAE) of 8.1% to 15.0% for the supply voltage $V_{{ m PA}}$ which varies from 0.7,V to 1.0,V at 60,GHz, respectively.

In this paper, we discuss the effects of switch resistances on the step response of switched-capacitor (SC) circuits, especially multiplying digital-to-analog converters (MDACs) in pipelined analog-to-digital converters. Theory and simulation results reveal that the settling time of MDACs can be decreased by optimizing the switch resistances. This switch resistance optimization does not only effectively increase the speed of single-bit MDACs, but also of multi-bit MDACs. Moreover, multi-bit MDACs are faster than the single-bit MDACs when slewing occurs during the step response. With such an optimization, the response of the switch will be improved by up to 50%.

An all-digital fully-synthesizable PVT-tolerant clock data recovery (CDR) architecture for wireline chip-to-chip interconnects is presented. The proposed architecture enables the co-synthesis of the CDR with the digital core. By eliminating the resource hungry manual layout and interfacing steps, which are necessary for conventional CDR topologies, the design process and the time-to-market can be drastically improved. Besides, the proposed CDR architecture enables the re-usability of majority of the sub-systems which enables easy migration to different process nodes. The proposed CDR is also equipped with a self-calibration scheme for ensuring tolerence over PVT. The proposed fully-syntehsizable CDR was implemented in 28nm FDSOI. The system achieves a maximum data rate of 10.06Gbps while consuming a power of 16.1mW from a 1V power supply.

This paper presents a 20 GHz push-push VCO realized by a 10 GHz super-harmonic coupled quadrature oscillator for a quadrature 60 GHz frequency synthesizer. The output nodes are peaked by a tunable second harmonic resonator. The proposed VCO is implemented in 65 nm CMOS process. It achieves a tuning range of 3.5 GHz from 16.1 GHz to 19.6 GHz with a phase noise of -106 dBc/Hz at 1 MHz offset. The power consumption of the core oscillators is 10.3 mW and an FoM of -181.3 dBc/Hz is achieved.

Recent attempts to directly combine CMOS pixel readout chips with modern gas detectors open the possibility to fully take advantage of gas detectors. Those conventional readout LSIs designed for hybrid semiconductor detectors show some issues when applied to gas detectors. Several new proposed readout LSIs can improve the time and the charge measurement precision. However, the widely used basic charge sensitive amplifier (CSA) has an almost fixed dynamic range. There is a trade-off between the charge measurement resolution and the detectable input charge range. This paper presents a method to apply the folding integration technique to a basic CSA. As a result, the detectable input charge dynamic range is expanded while maintaining all the key merits of a basic CSA. Although folding integration technique has already been successfully applied in CMOS image sensors, the working conditions and the signal characteristics are quite different for pixel readout LSIs for gas particle detectors. The related issues of the folding CSA for pixel readout LSIs, including the charge error due to finite gain of the preamplifier, the calibration method of charge error, and the dynamic range expanding efficiency, are addressed and analyzed. As a design example, this paper also demonstrates the application of the folding integration technique to a Qpix readout chip. This improves the charge measurement resolution and expands the detectable input dynamic range while maintaining all the key features. Calculations with SPICE simulations show that the dynamic range can be improved by 12 dB while the charge measurement resolution is improved by 10 times. The charge error during the folding operation can be corrected to less than 0.5%, which is sufficient for large input charge measurement.

A 7bit 1GS/s flash ADC using two bit active interpolation and background offset calibration is proposed and tested. It achieves background calibration using 36 pre-amplifiers with 139 comparators. To cancel the offset, two pre-amplifiers and 12 comparators are set to offline in turn while the others are operating. A two bit active interpolation design and an offset cancellation scheme are implemented in the latch stage. The interpolation and background calibration significantly reduce analog input signal as well as reference voltage load. Fabricated with the 90nm CMOS process, the proposed ADC consumes 95mW under a 1.2V power supply.

An all-digital time-domain ADC, abbreviated as TAD, is presented in this paper. All-digital structure is intrinsically compatible with the scaling of CMOS technology, and can satisfy the great demand of miniaturized and low-voltage sensor interface. The proposed TAD uses an inverter-based Ring-Delay-Line (RDL) to transform the input signal from voltage domain to time domain. The voltage-modulated time information is then digitized by a composite architecture namely “4-Clock-Edge-Shift Construction” (4CKES). TAD features superior voltage sensitivity and 1st-order noise shaping, which can significantly simplify the power-hungry pre-conditioning circuits. Reconfigurable resolution can be easily achieved by applying different sampling rates. A TAD prototype is fabricated in 65nm CMOS, and consumes a small area of 0.016mm2. It achieves a voltage resolution of 82.7µV/LSB at 10MS/s and 1.96µV/LSB at 200kS/s in a narrow input range of 0.1Vpp, merely under 0.6V supply. The highest SNR of TAD prototype is 61.36dB in 20kHz bandwidth at 10MS/s. This paper also analyzes the nonideal effects of TAD and discusses the potential solutions. As the principal drawback, nonlinearity of TAD can be compensated by the differential-setup and digital calibration.

We present a time-to-digital converter (TDC) achieving sub-picosecond resolution and high precision for all-digital phase-locked-loops (ADPLLs). The basic idea is using a charge pump to translate time interval into charge, and a successive-approximation-register-analog-to-digital converter (SAR-ADC) to quantize the charge. With this less complex configuration, high resolution, high precision, low power, and small area can be achieved all together. We analyzed the noise contribution from the charge pump and describe detailed design and implementation for sizing the capacitor and transistors, with the awareness of noise and linearity. The analysis demonstrates the proposed TDC capable of sub-picosecond resolution and high precision. Two prototype chips were fabricated in 65nm CMOS with 0.06mm2, and 0.018mm2 core areas, respectively. The achieved resolutions are 0.84ps and 0.80ps, in 8-bit and 10-bit range, respectively. The measured single-shot-precisions range from 0.22 to 0.6ps, and from 0.66 to 1.04ps, respectively, showing consistent trends with the analysis. Compared with state-of-the-arts, best performance balance has been achieved.

This paper presents a 12-bit interpolated pipeline analog to digital converter (ADC) using body voltage controlled amplifier for current biasing and common mode feedback (CMFB). The proposed body voltage control method allows the amplifier to achieve small power consumption and large output swing. The proposed amplifier has a power consumption lower than 15.6mW, almost half of the folded cascode amplifier satisfying 12-bit, 400MS/s ADC operation. Moreover, the proposed amplifier secures 600mV output swing, which is one drain source voltage (VDS) wider compared with the telescopic amplifier. The 12-bit interpolated pipeline ADC using the proposed amplifier is fabricated in a 1P9M 90nm CMOS technology with a 1.2V supply voltage. The ADC achieves an effective number of bit (ENOB) of about 10-bit at 300MS/s and an figure of merit (FoM) of 0.2pJ/conv. when the frequency of the input signal is sufficiently low.

This paper presents a high resolution mixed-domain Delta-Sigma (ΔΣ) time-to-digital converter (TDC) which utilizes a charge pump as time-to-voltage converter, a low resolution SAR ADC as quantizer, and a pair of delay-line digital-to-time converters to form a negative feedback. By never resetting the sampling capacitor of the charge-pump, an integrator is realized and first order noise shaping can be achieved. However, since the integrating capacitor is never cleared, this circuit is prone to charge-sharing issue during input sampling which can degrade TDC's performance. To deal with this issue, a compensation circuit consists of another pair of sampling capacitors and charge-pumps with doubled current is proposed. This TDC is designed and simulated in 65 nm CMOS technology and can operate at 200 MHz sampling frequency. For 2.5 MHz bandwidth, simulation shows that this TDC achieves 66.4 dB SNDR and 295 fsrms integrated noise for ±1 ns input range. The proposed TDC consumes 1.78 mW power that translates to FoM of 208 fJ/conv.

An L-2L through-line de-embedding method has been verified up to millimeter wave frequency. The parasitics of the pad can be modeled from the L-2L through-line. Measurement results of the transmission lines and transistors can be de-embedded by subtracting the parasitic matrix of the pad. Therefore, the de-embedding patterns, which is used for modeling active and passive devices, decrease greatly and the chip area also decreases. A one-stage amplifier is firstly implemented for helping verifying the de-embedding results. After that a four-stage 60 GHz amplifier has been fabricated in CMOS 65 nm process. Experimental results show that the four-stage amplifier realizes an input matching better than -10.5 dB and an output matching better than -13 dB at 61 GHz. A small signal power gain of 16.4 dB and a 1 dB output compression point of 4.6 dBm are obtained with a DC current consumption of 128 mA from a 1.2 V power supply. The chip size is 1.5 mm 0.85 mm.

Application area of mixed signal technology is currently expanded to digital communication, networking, and digital storage systems from conventional digital audio and video systems. Digital consumer electronics are emerged and their markets are extremely increased. Rapid progress of integrated circuit technology has enabled a system level integration on a SoC. Thus mixed signal SoC becomes a majority in LSI industry. Almost all the analog functions should be realized by CMOS technology on SoC, yet some difficulties such as a low transconductance, a large mismatch voltage, and a large 1/f noise should be solved. CMOS device has been considered as a poor device for the analog use, however in reality, it has attained a remarkable progress for analog applications. CMOS device has a variety of circuit techniques to address its own issues and also has an analog performance that increases rapidly with technology scaling. The mixed signal SoC needs a new development strategy and design methodology that covers from system level to device level for addressing tough needs for a shorter development time, a lower cost, and a higher design quality. The optimizations over analog and digital and over system to device must be established for the development success. Difficulty of low voltage operation of further scaled CMOS in analog circuits will be the most serious issue. This results in the saturation of performance and increase of cost. The system level optimization over analog and digital, digital calibration and compensation, and the use of sigma-delta modulation method will give us the solution.

This paper describes an ultralow-power multi-threshold (MT) CMOS/SOI circuit technique that mainly uses fully-depleted MOSFETs. The MTCMOS/SOI circuit, which combines fully-depleted low- and medium-Vth CMOS/SOI logic gates and high-Vth power-switch transistors, makes it possible to lower the supply voltage to 0.5 V and reduce the power dissipation of LSIs to the 1-mW level. We overview some MTCMOS/SOI digital and analog components, such as a CPU, memory, analog/RF circuit and DC-DC converter for an ultralow-power mobile system. The validity of the ultralow-voltage MTCMOS/SOI circuits is confirmed by the demonstration of a self-powered 300-MHz-band short-range wireless system. A 1-V SAW oscillator and a switched-capacitor-type DC-DC converter in the transmitter makes possible self-powered transmission by the heat from a hand. In the receiver, a 0.5-V digital controller composed of a 8-bit CPU, 256-kbit SRAM, and ROM also make self-powered operation under illumination possible.

Analog-centric RFCMOS technology has played an important role in motivating the change of technology from conventional discrete device technology or bipolar IC technology to CMOS technology. However it introduces many problems such as poor performance, susceptibility to PVT fluctuation, and cost increase with technology scaling. The most important advantage of CMOS technology compared with legacy RF technology is that CMOS can use more high performance digital circuits for very low cost. In fact, analog-centric RF-CMOS technology has failed the FM/AM tuner business and the digital-centric CMOS technology is becoming attractive for many users. It has many advantages; such as high performance, no external calibration points, high yield, and low cost. From the above facts, digital-centric CMOS technology which utilizes the advantages of digital technology must be the right path for future RF technology. Further investment in this technology is necessary for the advancement of RF technology.

This paper analyzes a pseudo-differential dynamic comparator with a dynamic pre-amplifier. The transient gain of a dynamic pre-amplifier is derived and applied to equations of the thermal noise and the regeneration time of a comparator. This analysis enhances understanding of the roles of transistor's parameters in pre-amplifier's gain. Based on the calculated gain, two calibration methods are also analyzed. One is calibration of a load capacitance and the other is calibration of a bypass current. The analysis helps designers' estimation for the accuracy of calibration, dead-zone of a comparator with a calibration circuit, and the influence of PVT variation. The analyzed comparator uses 90-nm CMOS technology as an example and each estimation is compared with simulation results.

A method for shortening of the settling time in all digital phase-locked loops is proposed. The method utilizes self monitoring to obtain the parameters necessary for feed-forward compensation. Analysis shows that by employing this technique both fast settling and good stability can be achieved simultaneously. Matlab and Verilog-AMS simulation shows that typical settling speed can be reduced to less than one tenth compared to a system without the feed-forward compensation, by merely employing the feed-forward compensation system. Further more a design example shows that this settling time can be decreased further to less than one fifteenth through design considerations when compared to a speed optimized phase-locked loop design system without direct reference feed-forward compensation.