This paper presents an analog 2-dimensional discrete cosine transform (2-D DCT) processor for focal-plane image compression. The on-chip analog 2-D DCT processor can process directly the analog signal of the CMOS image sensor. The analog-to-digital conversion (ADC) is preformed after the 2-D DCT, and this leads to efficient AD conversion of video signals. Most of the 2-D DCT coefficients can be digitized by a relatively low-resolution ADC or a zero detector. The quantization process after the 2-D DCT can be realized by the ADC at the same time. The 88-point analog 2-D DCT processor is designed by switched-capacitor (SC) coefficient multipliers and an SC analog memory based on 0.35µm CMOS technology. The 2-D DCT processor has sufficient precision, high processing speed, low power dissipation, and small silicon area. The resulting smart image sensor chips with data compression and digital transmission functions are useful for the high-speed image acquisition devices and portable digital video camera systems.

This paper presents a 27.5-29.6GHz fractional-N frequency synthesizer using reference and frequency doublers to achieve low in-band and out-of-band phase-noise for 5G mobile communications. A consideration of the baseband carrier recovery circuit helps estimate phase noise requirement for high modulation scheme. The push-push amplifier and 28GHz balun help achieving differential signals with low out-of-band phase noise while consuming low power. A charge pump with gated offset as well as reference doubler help reducing PD noise resulting in low in-band phase noise while sampling loop filter helps reduce spurs. The proposed synthesizer has been implemented in 65nm CMOS technology achieving an in-band and out-of-band phase noise of -78dBc/Hz and -126dBc/Hz, respectively. It consumes only a total power of 33mW. The jitter-power figure-of-merit (FOM) is -231dB which is the highest among the state of the art >20GHz fractional-N PLLs using a low reference clock (<200MHz). The measured reference spurs are less than -80dBc.

This paper presents a multi-band WCDMA receiver consisting of a multi-band low noise amplifier (LNA), a multi-band mixer and an inter-stage tunable notch filter. The notch filter is used to suppress Tx leakage, and 0.8–1.5 GHz (66%) of tuning range is achieved. The receiver achieves 33 and 30 dB conversion gain, 6.4 and 8 dB NF, 50 and 35.5 dBm IIP2, and -6 and -4.7 dBm IIP3 at 0.8 and 1.5 GHz, respectively. The power consumption is 121 mW from a 1.8-V power supply. The receiver is implemented in a 0.18-µm CMOS process.

Conventional clock and data recovery (CDR) using a phase locked loop (PLL) suffers from problems such as long lock time, low frequency acquisition and harmonic locking. Consequently, a CDR system using a time to digital converter (TDC) is proposed. The CDR consists of simple arithmetic calculation and a TDC, allowing a fully digital realization. In addition, utilizing a TDC also allows the CDR to have a very wide frequency acquisition range. However, deterministic jitter is caused with each sample, because the system's sampling time period is changing slightly at each data edge. The proposed system does not minimize jitter, but it tolerates small jitter. Therefore, the system offers a faster lock time and a smaller sampling error. This proposed system has been verified on system level in a Verilog-A environment. The proposed method achieves faster locking within just a few data bits. The peak to peak jitter of the recovered clock is 60 ps and the RMS jitter of the recovered clock is 30 ps, assuming that the TDC resolution is 10 ps. In applications where a small jitter error can be tolerated, the proposed CDR offers the advantage of fast locking time and a small sampling error.

This paper presents a constant-current-controlled class-C VCO using a self-adjusting replica bias circuit. The proposed class-C VCO is more suitable in real-life applications as it can maintain constant current which is more robust in phase noise performance over variation of gate bias of cross-coupled pair comparing to a traditional approach without amplitude modulation issue. The proposed VCO is implemented in 180,nm CMOS process. It achieves a tuning range of 4.8--4.9,GHz with a phase noise of -121,dBc/Hz at 1,MHz offset. The power consumption of the core oscillators is 4.8,mW and an FoM of -189,dBc/Hz is achieved.

Capacitive feedback VCOs use capacitors that are connected from the output node to the gate of the tail transistor that acts as a current source. Using such feedback results in modulating the current that is used by the oscillator and therefore changes its cyclostationary noise properties which results in a lower output phase noise. This paper presents a mathematical study of capacitive feedback VCOs in terms of stability and phase noise enhancement to confirm stability and to explain the enhancement in phase noise. The derived expression for the phase noise shows an improvement of 4.4 dB is achievable by using capacitive feedback as long as the VCO stays in the current limited region. Measurement results taken from an actual capacitive feedback VCO implemented in a 65 nm CMOS process also agrees with the analysis and simulation results which further validates the given analysis.

This paper presents a 20GHz Class-C VCO using a noise sensitivity mitigation technique. A radio frequency Class-C VCO suffers from the AM-PM conversion, caused by the non-linear capacitance of cross coupled pair. In this paper, the phase noise degradation mechanism is discussed, and a desensitization technique of AM-PM noise is proposed. In the proposed technique, AM-PM sensitivity is canceled by tuning the tail impedance, which consists of 4-bit resistor switches. A 65-nm CMOS prototype of the proposed VCO demonstrates the oscillation frequency from 19.27 to 22.4GHz, and the phase noise of -105.7dBc/Hz at 1-MHz offset with the power dissipation of 6.84mW, which is equivalent to a Figure-of-Merit of -183.73dBc/Hz.

This paper describes the design of an interpolated pipeline analog-to-digital converter (ADC). By introducing the interpolation technique into the conventional pipeline topology, it becomes possible to realize a more than 10-bits resolution and several hundred MS/s ADC using low-gain open-loop amplifiers without any multiplying digital-to-analog converter (MDAC) calibration. In this paper, linearity requirement of the amplifier is analyzed with the relation of reference range and stage resolution first. Noise characteristic is also discussed with amplifier's noise bandwidth and load capacitance. After that, sampling speed and SNR characteristic are examined with various amplifier currents. Next, the resolution optimization of the pipeline stage is discussed based on the power consumption. Through the analysis, reasonable parameters for the amplifier can be defined, such as transconductance, source degeneration resistance and load capacitance. Also, optimized operating speed and stage resolution for interpolated pipelined ADC is shown. The analysis in this paper is valuable to both the design of interpolated pipeline ADCs and other circuits which incorporate interpolation and amplifiers.

This paper considers a simple type of Dynamic Element Matching (DEM), Clocked Averaging (CLA) method referred to as one-element-shifting (OES) and its effectiveness for the implementation of high spurious-free dynamic range (SFDR) multi-bit Delta-Sigma modulators (DSMs). Generic DEM techniques are successful at suppressing the mismatch error and increasing the SFDR of data converters. However, they will induce additional glitch energy in most cases. Some recent DEM methods achieve improvements in minimizing glitch energy but sacrificing their effects in harmonic suppression due to mismatches. OES technique discussed in this paper can suppress the effect of glitch while preserving the reduction of element mismatch effects. Hence, this approach achieves better SFDR performance over the other published DEM methods. With this OES, a 3rd order, 10 MHz bandwidth continuous-time DSM is implemented in 90 nm CMOS process. The measured SFDR attains 83 dB for a 10 MHz bandwidth. The measurement result also shows that OES improves the SFDR by higher than 10 dB.

In this paper the transfer function of a system with windowed current integration is discussed. This kind of integration is usually used in a sampling mixer and the current is generated by a transconductance amplifier (TA). The parasitic capacitance (Cp) and the output resistance of the TA (Ro,TA) before the sampling mixer heavily affect the performance. Calculations based on a model including the parasitic capacitance and the output resistance of the TA is carried out. Calculation results show that due to the parasitic capacitance, a notch at the sampling frequency appears, which is very harmful because it causes the gain near the sampling frequency to decrease greatly. The output resistance of the TA makes the depth of the notches shallow and decreases the gain near the sampling frequency. To suppress the effect of Cp and Ro,TA, an operational amplifier is introduced in parallel with the sampling capacitance (Cs). Simulation results show that there is a 17 dB gain increase while Cs is 1,pF, gm is 9,mS, N is 8 with a clock rate of 800,MHz.

A 7GS/s complete-DDFS-solution featuring a two-times interleaved RDAC with 1.2Vpp-diff output swing was fabricated in 65nm CMOS. The frequency tuning and amplitude resolutions are 24-bits and 10-bits respectively. The RDAC includes a mixed-signal, high-speed architecture for random swapping thermometer coding dynamic element matching that improves the narrowband SFDR up to 8dB for output frequencies below 1.85GHz. The proposed techniques enable a 7 GS/s operation with a spurious-free dynamic range better than 32dBc over the full Nyquist bandwidth. The worst case narrowband SFDR is 42dBc. This system consumes 87.9mW/(GS/s) from a 1.2V power supply when the RSTC-DEM method is enabled, resulting in a FoM of 458.9GS/s·2(SFDR/6)/W. A proof-of-concept chip with an active area of only 0.22mm2 was measured in prototypes encapsulated in a 144-pins low profile quad flat package.

This paper proposes a novel wideband voltage-controlled oscillator (VCO) for multi-band transceivers. The proposed oscillator has a core VCO and a tuning-range extension circuit, which consists of an injection-locked frequency divider (ILFD) and flip flop dividers. The two-stage differential ILFD generates quadrature outputs and realizes two, three, four, and six of divide ratio with very wide output frequency range. The proposed circuit is implemented by using a 90 nm CMOS process, and the chip area is 250200 µm2. The measured result achieves continuous frequency tuning range of 9.3 MHz-to-5.7 GHz (199%) with -210 dBc/Hz of figure-of-merit (FoMT).

This paper proposes a de-embedding method for on-chip S-parameter measurements at mm-wave frequency. The proposed method uses only two transmission lines with different length. In the proposed method, a parasitic-component model extracted from two transmission lines can be used for de-embedding for other-type DUTs like transistor, capacitor, inductor, etc. The experimental results show that the error in characteristic impedance between the different-length transmission lines is less than 0.7% above 40 GHz. The extracted pad model is also shown.

A 60-GHz power amplifier (PA) with a reliability consideration for a hot-carrier-induced~(HCI) degradation is presented. The supply voltage of the last stage of the PA ($V_{{ m PA}}$) is dynamically controlled by an on-chip digitally-assisted low drop-out voltage regulator (LDO) to alleviate HCI effects. A physical model for estimation of HCI degradation of NMOSFETs is discussed and investigated for dynamic operation. The PA is fabricated in a standard 65-nm CMOS process with a core area of 0.21,mm$^{2}$, which provides a saturation power of 10.1,dBm to 13.2,dBm with a peak power-added efficiency~(PAE) of 8.1% to 15.0% for the supply voltage $V_{{ m PA}}$ which varies from 0.7,V to 1.0,V at 60,GHz, respectively.

In this paper, we discuss the effects of switch resistances on the step response of switched-capacitor (SC) circuits, especially multiplying digital-to-analog converters (MDACs) in pipelined analog-to-digital converters. Theory and simulation results reveal that the settling time of MDACs can be decreased by optimizing the switch resistances. This switch resistance optimization does not only effectively increase the speed of single-bit MDACs, but also of multi-bit MDACs. Moreover, multi-bit MDACs are faster than the single-bit MDACs when slewing occurs during the step response. With such an optimization, the response of the switch will be improved by up to 50%.

An all-digital fully-synthesizable PVT-tolerant clock data recovery (CDR) architecture for wireline chip-to-chip interconnects is presented. The proposed architecture enables the co-synthesis of the CDR with the digital core. By eliminating the resource hungry manual layout and interfacing steps, which are necessary for conventional CDR topologies, the design process and the time-to-market can be drastically improved. Besides, the proposed CDR architecture enables the re-usability of majority of the sub-systems which enables easy migration to different process nodes. The proposed CDR is also equipped with a self-calibration scheme for ensuring tolerence over PVT. The proposed fully-syntehsizable CDR was implemented in 28nm FDSOI. The system achieves a maximum data rate of 10.06Gbps while consuming a power of 16.1mW from a 1V power supply.

This paper presents a 20 GHz push-push VCO realized by a 10 GHz super-harmonic coupled quadrature oscillator for a quadrature 60 GHz frequency synthesizer. The output nodes are peaked by a tunable second harmonic resonator. The proposed VCO is implemented in 65 nm CMOS process. It achieves a tuning range of 3.5 GHz from 16.1 GHz to 19.6 GHz with a phase noise of -106 dBc/Hz at 1 MHz offset. The power consumption of the core oscillators is 10.3 mW and an FoM of -181.3 dBc/Hz is achieved.

Recent attempts to directly combine CMOS pixel readout chips with modern gas detectors open the possibility to fully take advantage of gas detectors. Those conventional readout LSIs designed for hybrid semiconductor detectors show some issues when applied to gas detectors. Several new proposed readout LSIs can improve the time and the charge measurement precision. However, the widely used basic charge sensitive amplifier (CSA) has an almost fixed dynamic range. There is a trade-off between the charge measurement resolution and the detectable input charge range. This paper presents a method to apply the folding integration technique to a basic CSA. As a result, the detectable input charge dynamic range is expanded while maintaining all the key merits of a basic CSA. Although folding integration technique has already been successfully applied in CMOS image sensors, the working conditions and the signal characteristics are quite different for pixel readout LSIs for gas particle detectors. The related issues of the folding CSA for pixel readout LSIs, including the charge error due to finite gain of the preamplifier, the calibration method of charge error, and the dynamic range expanding efficiency, are addressed and analyzed. As a design example, this paper also demonstrates the application of the folding integration technique to a Qpix readout chip. This improves the charge measurement resolution and expands the detectable input dynamic range while maintaining all the key features. Calculations with SPICE simulations show that the dynamic range can be improved by 12 dB while the charge measurement resolution is improved by 10 times. The charge error during the folding operation can be corrected to less than 0.5%, which is sufficient for large input charge measurement.

A 7bit 1GS/s flash ADC using two bit active interpolation and background offset calibration is proposed and tested. It achieves background calibration using 36 pre-amplifiers with 139 comparators. To cancel the offset, two pre-amplifiers and 12 comparators are set to offline in turn while the others are operating. A two bit active interpolation design and an offset cancellation scheme are implemented in the latch stage. The interpolation and background calibration significantly reduce analog input signal as well as reference voltage load. Fabricated with the 90nm CMOS process, the proposed ADC consumes 95mW under a 1.2V power supply.

An all-digital time-domain ADC, abbreviated as TAD, is presented in this paper. All-digital structure is intrinsically compatible with the scaling of CMOS technology, and can satisfy the great demand of miniaturized and low-voltage sensor interface. The proposed TAD uses an inverter-based Ring-Delay-Line (RDL) to transform the input signal from voltage domain to time domain. The voltage-modulated time information is then digitized by a composite architecture namely “4-Clock-Edge-Shift Construction” (4CKES). TAD features superior voltage sensitivity and 1st-order noise shaping, which can significantly simplify the power-hungry pre-conditioning circuits. Reconfigurable resolution can be easily achieved by applying different sampling rates. A TAD prototype is fabricated in 65nm CMOS, and consumes a small area of 0.016mm2. It achieves a voltage resolution of 82.7µV/LSB at 10MS/s and 1.96µV/LSB at 200kS/s in a narrow input range of 0.1Vpp, merely under 0.6V supply. The highest SNR of TAD prototype is 61.36dB in 20kHz bandwidth at 10MS/s. This paper also analyzes the nonideal effects of TAD and discusses the potential solutions. As the principal drawback, nonlinearity of TAD can be compensated by the differential-setup and digital calibration.